MOC8050

Cross Number:

Item Description: OPTOISO 5.3KV DARLINGTON 6-DIP
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

1
Motorola Optoelectronics Device Data
The MOC8030 and MOC8050 devices consist of gallium arsenide infrared
emitting diodes optically coupled to monolithic silicon photodarlington detec-
tors. The chip to Pin 6 base connection has been eliminated to improve output
performance in high noise environments.
They are best suited for use in applications susceptible to high EMI levels.
No Base Connection for Improved Noise Immunity
High Collector–Emitter Breakdown Voltage — 80 Volts Minimum
Higher Sensitivity to Low Input Drive Current
To order devices that are tested and marked per VDE 0884 requirements, the
suffix ”V” must be included at end of part number. VDE 0884 is a test option.
Applications
Appliances, Measuring Instruments
I/O Interfaces for Computers
Programmable Controllers
Portable Electronics
Interfacing and coupling systems of different potentials and impedance
Solid State Relays
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
INPUT LED
Reverse Voltage V
R
3 Volts
Forward Current — Continuous I
F
60 mA
LED Power Dissipation @ T
A
= 25°C
with Negligible Power in Output Detector
Derate above 25°C
P
D
120
1.41
mW
mW/°C
OUTPUT DETECTOR
Collector–Emitter Voltage V
CEO
80 Volts
Collector Current Continuous IC 150 mA
Emitter–Collector Voltage V
ECO
5 Volts
Detector Power Dissipation @ T
A
= 25°C
with Negligible Power in Input LED
Derate above 25°C
P
D
150
1.76
mW
mW/°C
TOTAL DEVICE
Isolation Surge Voltage
(1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
V
ISO
7500 Vac(pk)
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
250
2.94
mW
mW/°C
Ambient Operating Temperature Range
(2)
T
A
55 to +100 °C
Storage Temperature Range
(2)
T
stg
55 to +150 °C
Soldering Temperature (10 sec, 1/16 from case) T
L
260 °C
1. Isolation surge voltage is an internal device dielectric breakdown rating.
1. For this test, Pins 1 and 2 are common, and Pins 4 and 5 are common.
2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
Preferred devices are Motorola recommended choices for future use and best overall value.
GlobalOptoisolator is a trademark of Motorola, Inc.
Order this document
by MOC8050/D
SEMICONDUCTOR TECHNICAL DATA
GlobalOptoisolator
Motorola, Inc. 1995
SCHEMATIC
[CTR = 500% Min]
STANDARD THRU HOLE
CASE 730A–04
STYLE 3 PLASTIC
[CTR = 300% Min]
Motorola Preferred Devices
PIN 1. LED ANODE
2. LED CATHODE
3. N.C.
4. EMITTER
5. COLLECTOR
6. N.C.
1
2
3
6
5
4
6
1
REV 2
2
Motorola Optoelectronics Device Data
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
(1)
Characteristic Symbol Min Typ
(1)
Max Unit
INPUT LED
Reverse Leakage Current
(V
R
= 3 V)
I
R
0.05 10 µA
Forward Voltage
(I
F
= 10 mA)
V
F
1.15 2 Volts
Capacitance
(V
R
= 0 V, f = 1 MHz)
C 18 pF
PHOTODARLINGTON (T
A
= 25°C and I
F
= 0, unless otherwise noted)
Collector–Emitter Dark Current
(V
CE
= 60 V)
I
CEO
1 µA
Collector–Emitter Breakdown Voltage
(I
C
= 1 mA)
V
(BR)CEO
80 Volts
Emitter–Collector Breakdown Voltage
(I
E
= 100 µA)
V
(BR)ECO
5 Volts
COUPLED (T
A
= 25°C unless otherwise noted)
Collector Output Current
(V
CE
= 1.5 V, I
F
= 10 mA) MOC8030
MOC8050
I
C
(CTR)
(2)
30 (300)
50 (500)
mA (%)
Isolation Surge Voltage
(3,4)
, 60 Hz Peak ac, 5 Second V
ISO
7500 Vac(pk)
Isolation Resistance
(3)
(V = 500 V)
R
ISO
10
11
Ohms
Isolation Capacitance
(3)
(V = 0 V, f = 1 MHz)
C
ISO
0.2 pF
SWITCHING
Turn–On Time t
on
3.5
µs
Turn–Off Time
V
CC
= 10 V, R
L
= 100 , I
F
= 5 mA
(5)
t
off
95
Rise Time
V
CC
= 10 V, R
L
= 100 , I
F
= 5 mA
(5)
t
r
1
Fall Time t
f
2
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = I
C
/I
F
x 100%.
3. For this test, LED Pins 1 and 2 are common and Phototransistor Pins 4 and 5 are common.
4. Isolation Surge Voltage, V
ISO
, is an internal device dielectric breakdown rating.
5. For test circuit setup and waveforms, refer to Figure 9.
T
A
= –55
°
C THRU
+70
°
C
+100
°
C
+25
°
C
Figure 1. LED Forward Voltage versus Forward Current Figure 2. Output Current versus Input Current
2
1.8
1.6
1.4
1.2
1
1 10 100 1000
I
F
, LED FORWARD CURRENT (mA)
25
°
C
100
°
C
V
F
, FORWARD VOLTAGE (VOLTS)
I
C
, OUTPUT COLLECTOR CURRENT (NORMALIZED)
10
1
0.1
0.01
0.5 1 2 5 10 20 50
I
F
, LED INPUT CURRENT (mA)
PULSE ONLY
PULSE OR DC
T
A
= –55
°
C
TYPICAL CHARACTERISTICS
T
A
= 25
°
C
NORMALIZED TO: I
F
= 10 mA
3
Motorola Optoelectronics Device Data
, COLLECTOR CURRENT (mA)
20
0
Figure 3. Collector Current versus
Collector–Emitter Voltage
I
F
= 10 mA
0
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
I
C
40
60
80
100
120
140
1 2 3 4 5 6 7 8 9 10
5 mA
2 mA
1 mA
10
7
5
2
1
0.7
0.5
0.2
0.1
–60
Figure 4. Output Current versus Ambient Temperature
–40 –20
C
, OUTPUT COLLECTOR CURRENT (NORMALIZED)
0 20 40 60 80 100
T
A
, AMBIENT TEMPERATURE (
°
C)
I
–60
Figure 5. Collector–Emitter Voltage versus
Ambient Temperature
0.7
T
A
, AMBIENT TEMPERATURE (
°
C)
V
CE
, COLLECTOR–EMITTER VOLTAGE (NORMALIZED)
–40 –20 0 20 40 60 80 100
0.8
0.9
1
1.1
1.2
1.3
0
Figure 6. Collector–Emitter Dark Current versus
Ambient Temperature
1
T
A
, AMBIENT TEMPERATURE (
°
C)
I
10
10
2
10
3
10
4
10
5
20 40 60 80 100
NORMALIZED TO: V
CE
= 10 V
NORMALIZED TO: T
A
= 25
°
C
CEO
, COLLECTOR–EMITTER DARK CURRENT (NORMALIZED)
0.1
Figure 7. Turn–On Switching Times
(Typical Values)
1
I
F
, LED INPUT CURRENT (mA)
t, TIME ( s)
10
100
1000
µ
0.2 0.5 1 2 5 10 20 50 100
V
CC
= 10 V
100
10
0.1
1
I
F
, LED INPUT CURRENT (mA)
10
100
1000
0.2 0.5 1 2 5 10 20 50 100
R
L
= 1000
100
10
t, TIME ( s)
µ
V
CC
= 10 V
Figure 8. Turn–Off Switching Times
(Typical Values)
V
CE
= 55 V
10 V
30 V
R
L
= 1000
NORMALIZED TO T
A
= 25
°
C
NORMALIZED TO T
A
= 25
°
C
12NEXT

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