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MC74VHC244DTG

Part # MC74VHC244DTG
Description LOG CMOS BUS INTRFCE OCTL - Rail/Tube
Category IC
Availability In Stock
Qty 73
Qty Price
1 + $0.09486
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ON Semiconductor
Date Code: 1040
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

© Semiconductor Components Industries, LLC, 2011
May, 2011 Rev. 8
1 Publication Order Number:
MC74VHC244/D
MC74VHC244
Octal Bus Buffer
The MC74VHC244 is an advanced high speed CMOS octal bus
buffer fabricated with silicon gate CMOS technology.
The MC74VHC244 is a noninverting 3state buffer, and has two
activelow output enables. This device is designed to be used with
3state memory address drivers, etc.
The internal circuit is composed of three stages, including a buffer
output which provides high noise immunity and stable output. The
inputs tolerate voltages up to 7 V, allowing the interface of 5 V systems
to 3 V systems.
High Speed: t
PD
= 3.9 ns (Typ) at V
CC
= 5 V
Low Power Dissipation: I
CC
= 4 mA (Max) at T
A
= 25°C
High Noise Immunity: V
NIH
= V
NIL
= 28% V
CC
Power Down Protection Provided on Inputs
Balanced Propagation Delays
Designed for 2 V to 5.5 V Operating Range
Low Noise: V
OLP
= 0.9 V (Max)
Pin and Function Compatible with Other Standard Logic Families
Latchup Performance Exceeds 300 mA
ESD Performance: Human Body Model > 2000 V
Machine Model > 200 V
Chip Complexity: 136 FETs
These Devices are PbFree and are RoHS Compliant
DATA
INPUTS
A1
A2
A3
A4
B1
B2
B3
B4
17
15
13
11
8
6
4
218
16
14
12
9
7
5
3
YB4
YB3
YB2
YB1
YA4
YA3
YA2
YA1
NONINVERTING
OUTPUTS
OUTPUT
ENABLES
OEA
OEB
1
19
Figure 1. Logic Diagram
http://onsemi.com
20
1
1
20
MARKING DIAGRAMS
SOIC20
DW SUFFIX
CASE 751D
VHC244
AWLYYWWG
TSSOP20
DT SUFFIX
CASE 948E
SOEIAJ20
M SUFFIX
CASE 967
VHC244
AWLYWWG
1
1
1
20
1
20
20
20
VHC244 = Specific Device Code
A = Assembly Location
WL, L = Wafer Lot
Y = Year
WW, W = Work Week
G or G = PbFree Package
(Note: Microdot may be in either location)
VHC
244
ALYWG
G
A3
A2
YB4
A1
OEA
GND
YB1
A4
YB2
YB3 5
4
3
2
1
10
9
8
7
6
14
15
16
17
18
19
20
11
12
13
YA2
B4
YA1
OEB
V
CC
B1
YA4
B2
YA3
B3
PIN ASSIGNMENT
ORDERING INFORMATION
See detailed ordering and shipping information in the
Ordering Information Table on page 2 of this data sheet.
MC74VHC244
http://onsemi.com
2
FUNCTION TABLE
INPUTS OUTPUTS
OEA, OEB A, B YA, YB
L L L
L H H
H X Z
ORDERING INFORMATION
Device Package Shipping
MC74VHC244DW OBSOLETE* SOIC20 WB 38 Units/Rail
MC74VHC244DWR2G SOIC20 WB
(PbFree)
1000/Tape & Reel
MC74VHC244DTG TSSOP20
(PbFree)
75 Units/Rail
MC74VHC244DTR2G TSSOP20
(PbFree)
2500/Tape & Reel
MC74VHC244M OBSOLETE* SOIC EIAJ20
(PbFree)
1600 Units/Box
MC74VHC244MELG SOIC EIAJ20
(PbFree)
2000/Tape & Reel
*This device is obsolete, information available for reference.
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MAXIMUM RATINGS (Note 1)
Symbol
Parameter Value Unit
V
CC
Positive DC Supply Voltage 0.5 to +7.0 V
V
IN
Digital Input Voltage 0.5 to +7.0 V
V
OUT
DC Output Voltage 0.5 to V
CC
+0.5 V
I
IK
Input Diode Current 20 mA
I
OK
Output Diode Current $20 mA
I
OUT
DC Output Current, per Pin $25 mA
I
CC
DC Supply Current, V
CC
and GND Pins $75 mA
P
D
Power Dissipation in Still Air SOIC
TSSOP
500
450
mW
T
STG
Storage Temperature Range 65 to +150 °C
V
ESD
ESD Withstand Voltage Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
>2000
>200
>2000
V
I
LATCHUP
Latchup Performance Above V
CC
and Below GND at 125°C (Note 5) $300 mA
q
JA
Thermal Resistance, JunctiontoAmbient SOIC
TSSOP
96
128
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. V
in
and V
out
should be constrained to the range GND v (V
in
or V
out
) v V
CC
. Unused inputs must always be tied to an appropriate logic voltage
level (e.g., either GND or V
CC
). Unused outputs must be left open.
2. Tested to EIA/JESD22A114A
3. Tested to EIA/JESD22A115A
4. Tested to JESD22C101A
5. Tested to EIA/JESD78
MC74VHC244
http://onsemi.com
3
RECOMMENDED OPERATING CONDITIONS
Symbol Characteristics Min Max Unit
V
CC
DC Supply Voltage 2.0 5.5 V
V
IN
DC Input Voltage 0 5.5 V
V
OUT
DC Output Voltage 0 V
CC
V
T
A
Operating Temperature Range, all Package Types 55 125 °C
t
r
, t
f
Input Rise or Fall Time V
CC
= 3.3 V + 0.3 V
V
CC
= 5.0 V + 0.5 V
0 100
20
ns/V
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature °C
Time, Hours Time, Years
80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4
110 79,600 9.4
120 37,000 4.2
130 17,800 2.0
140 8,900 1.0
1
1 10 100
1000
TIME, YEARS
NORMALIZED FAILURE RATE
T
J
= 80
C°
T
J
= 90
C°
T
J
= 100 C°
T
J
= 110 C°
T
J
= 130 C°
T
J
= 120 C°
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 2. Failure Rate vs. Time Junction Temperature
DC CHARACTERISTICS
(Voltages Referenced to GND)
V
CC
T
A
= 25°C T
A
85°C 55°C T
A
125°C
Symbol Parameter Condition (V) Min Typ Max Min Max Min Max Unit
V
IH
Minimum HighLevel
Input Voltage
2.0
3.0 to
5.5
1.5
V
CCX
0.7
1.5
V
CCX
0.7
1.5
V
CCX
0.7
1.5
V
CCX
0.7
V
V
IL
Maximum LowLevel
Input Voltage
2.0
3.0 to
5.5
0.5
V
CCX
0.3
0.5
V
CCX
0.3
0.5
V
CCX
0.3
V
V
OH
Maximum HighLevel
Output Voltage
V
IN
= V
IH
or V
IL
I
OH
= 50 mA
2.0
3.0
4.5
1.9
2.9
4.4
2.0
3.0
4.5
1.9
2.9
4.4
1.9
2.9
4.4
V
V
IN
= V
IH
or V
IL
I
OH
= 4 mA
I
OH
= 8 mA
3.0
4.5
2.58
3.94
2.48
3.8
2.34
3.66
V
OL
Maximum LowLevel
Output Voltage
V
IN
= V
IH
or V
IL
I
OL
= 50 mA
2.0
3.0
4.5
0.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
V
IN
= V
IH
or V
IL
I
OH
= 4 mA
I
OH
= 8 mA
3.0
4.5
0.36
0.36
0.44
0.44
0.52
0.52
I
IN
Input Leakage Current V
IN
= 5.5 V or GND 0 to
5.5
±0.1 ±1.0 ±1.0
mA
I
OZ
Maximum 3State
Leakage Current
V
IN
= V
IH
or V
IL
V
OUT
= V
CC
or GND
5.5 ±0.25 ±2.5 ±2.5
mA
I
CC
Maximum Quiescent
Supply Current
(per package)
V
IN
= V
CC
or GND 5.5 4.0 40.0 40.0
mA
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