4-378
Absolute Maximum Ratings T
C
= 25
o
C, Unless Otherwise Specified
IRFR120, IRFU120 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
100 V
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
100 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
8.4
5.9
A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
34 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
50 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.33 W/
o
C
Single Pulse Avalanche Energy Rating (Figure 14). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
36 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J,
T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSS
I
D
= 250µA, V
GS
= 0V (Figure 10) 100 - - V
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250µA 2.0 - 4.0 V
Zero Gate Voltage Drain Current I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V - - 25 µA
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 150
o
C - - 250 µA
On-State Drain Current (Note 2) I
D(ON)
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V 8.4 - - A
Gate to Source Leakage Current I
GSS
V
GS
= ±20V - - ±500 nA
Drain to Source On Resistance (Note 2) r
DS(ON)
I
D
= 5.9A, V
GS
= 10V (Figures 8, 9) - 0.25 0.27 Ω
Forward Transconductance (Note 2) g
fs
V
DS
≥ 50V, I
D
= 5.9A (Figure 12) 2.8 4.2 - S
Turn-On Delay Time t
d(ON)
V
DD
= 50V, I
D
≅ 8.4A, R
GS
= 18Ω, R
L
= 5.1Ω
MOSFET Switching Times are Essentially
Independent of Operating Temperature
- 8.8 13 ns
Rise Time t
r
-3045ns
Turn-Off Delay Time t
d(OFF)
-1929ns
Fall Time t
f
-2030ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= 10V, I
D
= 8.4A, V
DS
= 0.8 x Rated BV
DSS
,
I
G(REF)
= 1.5mA (Figure 14) Gate Charge is
Essentially Independent of Operating Temperature
- 9.7 15 nC
Gate to Source Charge Q
gs
- 2.2 3.3 nC
Gate to Drain “Miller” Charge Q
gd
- 2.3 3.4 nC
Input Capacitance C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz (Figure 11) - 350 - pF
Output Capacitance C
OSS
- 130 - pF
Reverse Transfer Capacitance C
RSS
-24- pF
Internal Drain Inductance L
D
Measured from the Drain
Lead, 6.0mm (0.25in) from
Package to Center of Die
Modified MOSFET
Symbol Showing the
Internal Device
Inductances
- 4.5 - nH
Internal Source Inductance L
S
Measured from the Source
Lead, 6.0mm (0.25in) from
Package to Source
Bonding Pad
- 7.5 - nH
Thermal Resistance, Junction to Case R
θJC
- - 3.0
o
C/W
Thermal Resistance, Junction to Ambient R
θJA
Typical Solder Mount - - 110
o
C/W
L
S
L
D
G
D
S
IRFR120, IRFU120
