Name: IRF7317
SKU: IRF7317
Price: 6.75308 USD
Availability: InStock

N-Ch P-Ch

DSS

20V -20V

DS(on)

0.029Ω 0.058Ω

N-Channel P-Channel

Drain-Source Voltage V

20 -20

Gate-Source Voltage V

± 12

= 25°C 6.6 -5.3

= 70°C 5.3 -4.3

Pulsed Drain Current I

26 -21

Continuous Source Current (Diode Conduction) I

2.5 -2.5

= 25°C 2.0

= 70°C 1.3

Single Pulse Avalanche Energy E

100 150 mJ

Avalanche Current I

4.1 -2.9 A

Repetitive Avalanche Energy E

0.20 mJ

Peak Diode Recovery dv/dt  dv/dt 5.0 -5.0 V/ ns

Junction and Storage Temperature Range T

STG

-55 to + 150 °C

PRELIMINARY

HEXFET

Power MOSFET

PD - 9.1568B

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements,

multiple devices can be used in an application with

dramatically reduced board space. The package is

designed for vapor phase, infra red, or wave soldering

techniques.

12/9/97

SO-8

l Generation V Technology

l Ultra Low On-Resistance

l Dual N and P Channel MOSFET

l Surface Mount

l Fully Avalanche Rated

IRF7317

Description

Thermal Resistance Ratings

Parameter Symbol Limit Units

Maximum Junction-to-Ambient  R

θJA

62.5

°C/W

Continuous Drain Current

Maximum Power Dissipation 

Symbol Maximum Units

N-CHANNEL MOSFET

P-CHANNEL MOSFET

Top View

Absolute Maximum Ratings ( T

= 25°C Unless Otherwise Noted)

IRF7317

 Surface mounted on FR-4 board, t ≤ 10sec.

Parameter Min. Typ. Max. Units Conditions

N-Ch 20 — — V

= 0V, I

= 250µA

P-Ch -20 — — V

= 0V, I

= -250µA

N-Ch — 0.027 — Reference to 25°C, I

= 1mA

P-Ch — 0.031 — Reference to 25°C, I

= -1mA

— 0.023 0.029 V

= 4.5V, I

= 6.0A 

— 0.030 0.046 V

= 2.7V, I

= 5.2A 

— 0.049 0.058 V

= -4.5V, I

= -2.9A 

— 0.082 0.098 V

= -2.7V, I

= -1.5A 

N-Ch 0.7 — — V

= V

, I

= 250µA

P-Ch -0.7 — — V

= V

, I

= -250µA

N-Ch — 20 — V

= 10V, I

= 6.0A 

P-Ch — 5.9 — V

= -10V, I

= -1.5A 

N-Ch — — 1.0 V

= 16V, V

= 0V

P-Ch — — -1.0 V

= -16V, V

= 0V

N-Ch — — 5.0 V

= 16V, V

= 0V, T

= 55°C

P-Ch — — -25 V

= -16V, V

= 0V, T

= 55°C

GSS

Gate-to-Source Forward Leakage N-P –– — ±100 V

= ±12V

N-Ch — 18 27

P-Ch — 19 29

N-Ch — 2.2 3.3

P-Ch — 4.0 6.1

N-Ch — 6.2 9.3

P-Ch — 7.7 12

N-Ch — 8.1 12

P-Ch — 15 22

N-Ch — 17 25

P-Ch — 40 60

N-Ch — 38 57

P-Ch — 42 63

N-Ch — 31 47

P-Ch — 49 73

N-Ch — 900 —

P-Ch — 780 —

N-Ch — 430 — pF

P-Ch — 470 —

N-Ch — 200 —

P-Ch — 240 —

(BR)DSS

Drain-to-Source Breakdown Voltage

∆V

(BR)DSS

/∆T

Breakdown Voltage Temp. Coefficient

DS(ON)

Static Drain-to-Source On-Resistance

GS(th)

Gate Threshold Voltage

Forward Transconductance

DSS

Drain-to-Source Leakage Current

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

d(on)

Turn-On Delay Time

Rise Time

d(off)

Turn-Off Delay Time

Fall Time

iss

Input Capacitance

oss

Output Capacitance

rss

Reverse Transfer Capacitance

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

V/°C

Ω

µA

N-Channel

= 6.0A, V

= 10V, V

= 4.5V



P-Channel

= -2.9A, V

= -16V, V

= -4.5V

N-Channel

= 10V, I

= 1.0A, R

= 6.0Ω,

= 10Ω



P-Channel

= -10V, I

= -2.9A, R

= 6.0Ω,

= 3.4Ω

N-Channel

= 0V, V

= 15V, ƒ = 1.0MHz

P-Channel

= 0V, V

= -15V, ƒ = 1.0MHz

N-Ch

P-Ch

Parameter Min. Typ. Max. Units Conditions

N-Ch — — 2.5

P-Ch — — -2.5

N-Ch — — 26

P-Ch — — -21

N-Ch — 0.72 1.0 T

= 25°C, I

= 1.7A, V

= 0V 

P-Ch — -0.78 -1.0 T

= 25°C, I

= -2.9A, V

= 0V 

N-Ch — 52 77

P-Ch — 47 71

N-Ch — 58 86

P-Ch — 49 73

Source-Drain Ratings and Characteristics

Continuous Source Current (Body Diode)

Pulsed Source Current (Body Diode) 

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

N-Channel

= 25°C, I

=1.7A, di/dt = 100A/µs

P-Channel 

= 25°C, I

= -2.9A, di/dt = 100A/µs

 N-Channel I

≤ 4.1A, di/dt ≤ 92A/µs, V

≤ V

(BR)DSS

, T

≤ 150°C

P-Channel I

≤ -2.9A, di/dt ≤ -77A/µs, V

≤ V

(BR)DSS

, T

≤ 150°C

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 22 )

Notes:

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

 N-Channel Starting T

= 25°C, L = 12mH R

= 25Ω, I

= 4.1A. (See Figure 12)

P-Channel Starting T

= 25°C, L = 35mH R

= 25Ω, I

= -2.9A.

IRF7317

Fig 3. Typical Transfer Characteristics

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 4. Typical Source-Drain Diode

Forward Voltage

N-Channel

100

0.1 1 10

20µs PULSE WIDTH

T = 25 C

TOP

BOTTOM

VGS

7.50V

4.50V

4.00V

3.50V

3.00V

2.70V

2.00V

1.50V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

1.50V

100

0.4 0.6 0.8 1.0 1.2 1.4 1.6

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 25 C

T = 150 C

100

0.1 1 10

20µs PULSE WIDTH

T = 150 C

TOP

BOTTOM

VGS

7.50V

4.50V

4.00V

3.50V

3.00V

2.70V

2.00V

1.50V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

1.50V

100

1.5 2.0 2.5 3.0

V = 10V

20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

T = 25 C

T = 150 C

Part #	IRF7317
Description	Trans MOSFET N/P-CH 20V 6.6A/5.3A 8-Pin SOIC - Rail/Tube
Category	IC
Availability	In Stock
Qty	44

Qty	Price
1 - 9	$6.75308
10 - 18	$5.37177
19 - 27	$5.06481
28 - 36	$4.70669
37 +	$4.19510

IRF7317

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