IRF7313
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage 0.78 1.0 V T
J
= 25°C, I
S
= 1.7A, V
GS
= 0V
t
rr
Reverse Recovery Time 45 68 ns T
J
= 25°C, I
F
= 1.7A
Q
rr
Reverse RecoveryCharge 58 87 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
30
2.5
A
S
D
G
Surface mounted on FR-4 board, t ≤ 10sec.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤ 4.0A, di/dt ≤ 74A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 150°C
Notes:
Starting T
J
= 25°C, L = 10mH
R
G
= 25Ω, I
AS
= 4.0A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 30 V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient 0.022 V/°C Reference to 25°C, I
D
= 1mA
0.023 0.029 V
GS
= 10V, I
D
= 5.8A
0.032 0.046 V
GS
= 4.5V, I
D
= 4.7A
V
GS(th)
Gate Threshold Voltage 1.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 14 S V
DS
= 15V, I
D
= 5.8A
1.0 V
DS
= 24V, V
GS
= 0V
25 V
DS
= 24V, V
GS
= 0V, T
J
= 55°C
Gate-to-Source Forward Leakage 100 V
GS
= 20V
Gate-to-Source Reverse Leakage -100 V
GS
= -20V
Q
g
Total Gate Charge 22 33 I
D
= 5.8A
Q
gs
Gate-to-Source Charge 2.6 3.9 nC V
DS
= 15V
Q
gd
Gate-to-Drain ("Miller") Charge 6.4 9.6 V
GS
= 10V, See Fig. 10
t
d(on)
Turn-On Delay Time 8.1 12 V
DD
= 15V
t
r
Rise Time 8.9 13 I
D
= 1.0A
t
d(off)
Turn-Off Delay Time 26 39 R
G
= 6.0Ω
t
f
Fall Time 17 26 R
D
= 15Ω
C
iss
Input Capacitance 650 V
GS
= 0V
C
oss
Output Capacitance 320 pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance 130 = 1.0MHz, See Fig. 9
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
µA
Ω
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
