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AD8606AR

Part # AD8606AR
Description OP Amp Dual GP R-R I/O 5.5V 8-Pin SOIC N Tube - Rail/Tube
Category IC
Availability Out of Stock
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

AD8605/AD8606/AD8608
Rev. D | Page 4 of 20
Parameter Symbol Conditions Min Typ Max Unit
NOISE PERFORMANCE
Peak-to-Peak Noise e
n
p-p f = 0.1 Hz to 10 Hz 2.3 3.5 µV p-p
Voltage Noise Density e
n
f = 1 kHz 8 12
nV/√
Hz
Voltage Noise Density e
n
f = 10 kHz 6.5
nV/√
Hz
Current Noise Density i
n
f = 1 kHz 0.01
pA/√
Hz
AD8605/AD8606/AD8608
Rev. D | Page 5 of 20
2.7 V ELECTRICAL SPECIFICATIONS
Table 2. @ V
S
= 2.7 V, V
CM
= V
S
/2, T
A
= 25°C, unless otherwise noted.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
AD8605/AD8606
V
S
= 3.5 V, V
CM
= 3 V
20 65 µV
AD8608
V
S
= 3.5 V, V
CM
= 2.7 V
20 75 µV
V
S
= 2.7 V, V
CM
= 0 V to 2.7 V
80 300 µV
−40°C < T
A
< +125°C
750 µV
Input Bias Current I
B
0.2 1 pA
AD8605/AD8606
−40°C < T
A
< +85°C
50 pA
AD8605/AD8606
−40°C < T
A
< +125°C
250 pA
AD8608
−40°C < T
A
< +85°C
100 pA
AD8608
−40°C < T
A
< +125°C
300 pA
Input Offset Current I
OS
0.1 0.5 pA
−40°C < T
A
< +85°C
20 pA
−40°C < T
A
< +125°C
75 pA
Input Voltage Range
0
2.7 V
Common-Mode Rejection Ratio CMRR V
CM
= 0 V to 2.7 V 80 95
dB
−40°C < T
A
< +125°C 70 85
dB
Large Signal Voltage Gain A
VO
RL = 2 kΩ, V
O
= 0.5 V to 2.2 V 110 350
V/mV
Offset Voltage Drift
AD8605/AD8606 ∆V
OS
/∆T
1 4.5 µV/°C
AD8608 ∆V
OS
/∆T
1.5 6.0 µV/°C
INPUT CAPACITANCE
Common-Mode Input Capacitance
8.8
pF
Differential Input Capacitance
2.59
pF
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
I
L
= 1 mA 2.6 2.66
V
−40°C < T
A
< +125°C 2.6
V
Output Voltage Low V
OL
I
L
= 1 mA
25 40 mV
−40°C < T
A
< +125°C
50 mV
Output Current I
OUT
±30
mA
Closed-Loop Output Impedance Z
OUT
f = 1 MHz, A
V
= 1
12
POWER SUPPLY
Power Supply Rejection Ratio PSRR
AD8605/AD8606
V
S
= 2.7 V to 5.5 V 80 95
dB
AD8608
V
S
= 2.7 V to 5.5 V 77 92
dB
−40°C < T
A
< +125°C 70 90
dB
Supply Current/Amplifier ISY V
O
= 0 V
1.15 1.4 mA
−40°C < T
A
< +125°C
1.5 mA
DYNAMIC PERFORMANCE
Slew Rate SR R
L
= 2 kΩ
5
V/µs
Settling Time t
S
To 0.01%, 0 V to 1 V step
< 0.5
µs
Gain Bandwidth Product GBP
9
MHz
Phase Margin
ϕ
O
50
Degrees
NOISE PERFORMANCE
Peak-to-Peak Noise e
n
p-p f = 0.1 Hz to 10 Hz 2.3 3.5 µV p-p
Voltage Noise Density e
n
f = 1 kHz 8 12
nV/√
Hz
Voltage Noise Density e
n
f = 10 kHz 6.5
nV/√
Hz
Current Noise Density i
n
f = 1 kHz 0.01
pA/√
Hz
AD8605/AD8606/AD8608
Rev. D | Page 6 of 20
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Table 3.
Parameter Rating
Supply Voltage 6 V
Input Voltage GND to V
S
Differential Input Voltage 6 V
Output Short-Circuit Duration
to GND
Observe Derating Curves
Storage Temperature Range
All Packages −65°C to +150°C
Operating Temperature Range
AD8605/AD8606/AD8608 −40°C to +125°C
Junction Temperature Range
All Packages −65°C to +150°C
Lead Temperature Range
(Soldering, 60 sec)
300°C
Table 4. Package Type
Package Type θ
JA
1
θ
JC
Unit
5-Bump MicroCSP (CB) 220 220 °C/W
5-Lead SOT-23 (RT) 230 92 °C/W
8-Lead MSOP (RM) 210 45 °C/W
8-Lead SOIC (R) 158 43 °C/W
14-Lead SOIC (R) 120 36 °C/W
14-Lead TSSOP (RU) 180 35 °C/W
1
θ
JA
is specified for worst-case conditions, i.e., θ
JA
is specified for device in
socket for PDIP packages; θ
JA
is specified for device soldered onto a circuit
board for surface-mount packages.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
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