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ADG709BRU

Part # ADG709BRU
Description ANLG MUX SGL 4:1 5.5V 16TSSOP- Rail/Tube
Category IC
Availability Out of Stock
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
a
ADG708/ADG709
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 World Wide Web Site: http://www.analog.com
Fax: 781/326-8703 © Analog Devices, Inc., 2000
CMOS, 3 Low Voltage
4-/8-Channel Multiplexers
FUNCTIONAL BLOCK DIAGRAMS
S1
S8
A0
D
A1
A2
ADG708
S1A
A0
DA
S4A
S1B
S4B
DB
EN
ADG709
1 OF 4
DECODER
EN
1 OF 8
DECODER
A1
FEATURES
1.8 V to 5.5 V Single Supply
3 V Dual Supply
3 On-Resistance
0.75 On-Resistance Flatness
100 pA Leakage Currents
14 ns Switching Times
Single 8-to-1 Multiplexer ADG708
Differential 4-to-1 Multiplexer ADG709
16-Lead TSSOP Package
Low Power Consumption
TTL/CMOS-Compatible Inputs
APPLICATIONS
Data Acquisition Systems
Communication Systems
Relay Replacement
Audio and Video Switching
Battery-Powered Systems
GENERAL DESCRIPTION
The ADG708 and ADG709 are low voltage, CMOS analog
multiplexers comprising eight single channels and four differential
channels respectively. The ADG708 switches one of eight inputs
(S1–S8) to a common output, D, as determined by the 3-bit
binary address lines A0, A1, and A2. The ADG709 switches one
of four differential inputs to a common differential output as
determined by the 2-bit binary address lines A0 and A1. An EN
input on both devices is used to enable or disable the device. When
disabled, all channels are switched OFF.
Low power consumption and operating supply range of 1.8 V to
5.5 V make the ADG708 and ADG709 ideal for battery-powered,
portable instruments. All channels exhibit break-before-make
switching action preventing momentary shorting when switch-
ing channels.
These switches are designed on an enhanced submicron process
that provides low power dissipation yet gives high switching
speed, very low on-resistance and leakage currents. On-resistance
is in the region of a few ohms and is closely matched between
switches and very flat over the full signal range. These parts can
operate equally well as either Multiplexers or Demultiplexers,
and have an input signal range that extends to the supplies.
The ADG708 and ADG709 are available in a 16-lead TSSOP
package.
PRODUCT HIGHLIGHTS
1. Single/Dual Supply Operation. The ADG708 and ADG709
are fully specified and guaranteed with 3 V and 5 V single
supply and ±3 V dual supply rails.
2. Low R
ON
(3 Typical).
3. Low Power Consumption (<0.01 µW).
4. Guaranteed Break-Before-Make Switching Action.
5. Small 16-Lead TSSOP Package.
–2–
REV. 0
ADG708/ADG709–SPECIFICATIONS
1
(V
DD
= 5 V 10%, V
SS
= 0 V, GND = 0 V, unless otherwise noted)
B Version C Version
–40C –40C
Parameter +25C to +85C +25C to +85C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
0 V to V
DD
V
On-Resistance (R
ON
)3 3 typ V
S
= 0 V to V
DD
, I
DS
= 10 mA;
4.5 5 4.5 5 max Test Circuit 1
On-Resistance Match Between 0.4 0.4 typ
Channels (R
ON
) 0.8 0.8 max V
S
= 0 V to V
DD
, I
DS
= 10 mA
On-Resistance Flatness (R
FLAT(ON)
) 0.75 0.75 typ V
S
= 0 V to V
DD
, I
DS
= 10 mA
1.2 1.2 max
LEAKAGE CURRENTS V
DD
= 5.5 V
Source OFF Leakage I
S
(OFF) ±0.01 ±0.01 nA typ V
D
= 4.5 V/1 V, V
S
= 1 V/4.5 V;
±20 ±0.1 ±0.3 nA max Test Circuit 2
Drain OFF Leakage I
D
(OFF) ±0.01 ±0.01 nA typ V
D
= 4.5 V/1 V, V
S
= 1 V/4.5 V;
±20 ±0.1 ±0.75 nA max Test Circuit 3
Channel ON Leakage I
D
, I
S
(ON) ±0.01 ±0.01 nA typ V
D
= V
S
= 1 V, or 4.5 V, Test Circuit 4
±20 ±0.1 ±0.75 nA max
DIGITAL INPUTS
Input High Voltage, V
INH
2.4 2.4 V min
Input Low Voltage, V
INL
0.8 0.8 V max
Input Current
I
INL
or I
INH
0.005 0.005 µA typ V
IN
= V
INL
or V
INH
±0.1 ±0.1 µA max
C
IN
, Digital Input Capacitance 2 2 pF typ
DYNAMIC CHARACTERISTICS
2
t
TRANSITION
14 14 ns typ R
L
= 300 , C
L
= 35 pF, Test Circuit 5
25 25 ns max V
S1
= 3 V/0 V, V
S8
= 0 V/3 V
Break-Before-Make Time Delay, t
D
8 8 ns typ R
L
= 300 , C
L
= 35 pF
1 1 ns min V
S
= 3 V, Test Circuit 6
t
ON
(EN) 14 14 ns typ R
L
= 300 , C
L
= 35 pF
25 25 ns max V
S
= 3 V, Test Circuit 7
t
OFF
(EN) 7 7 ns typ R
L
= 300 , C
L
= 35 pF
12 12 ns max V
S
= 3 V, Test Circuit 7
Charge Injection ±3 ±3 pC typ V
S
= 2.5 V, R
S
= 0 , C
L
= 1 nF;
Test Circuit 8
Off Isolation –60 –60 dB typ R
L
= 50 , C
L
= 5 pF, f = 10 MHz
–80 –80 dB typ R
L
= 50 , C
L
= 5 pF, f = 1 MHz;
Test Circuit 9
Channel-to-Channel Crosstalk –60 –60 dB typ R
L
= 50 , C
L
= 5 pF, f = 10 MHz
–80 –80 dB typ R
L
= 50 , C
L
= 5 pF, f = 1 MHz;
Test Circuit 10
–3 dB Bandwidth 55 55 MHz typ R
L
= 50 , C
L
= 5 pF, Test Circuit 9
C
S
(OFF) 13 13 pF typ
C
D
(OFF)
ADG708 85 85 pF typ
ADG709 42 42 pF typ
C
D
, C
S
(ON)
ADG708 96 96 pF typ
ADG709 48 48 pF typ
POWER REQUIREMENTS V
DD
= 5.5 V
I
DD
0.001 0.001 µA typ Digital Inputs = 0 V or 5.5 V
1.0 1.0 µA max
NOTES
1
Temperature range is as follows: B and C Versions: –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–3–
REV. 0
ADG708/ADG709
SPECIFICATIONS
1
(V
DD
= 3 V 10%, V
SS
= 0 V, GND = 0 V, unless otherwise noted)
B Version C Version
–40C –40C
Parameter +25C to +85C +25C to +85C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
0 V to V
DD
V
On-Resistance (R
ON
)8 8Ω typ V
S
= 0 V to V
DD
, I
DS
= 10 mA;
11 12 11 12 max Test Circuit 1
On-Resistance Match Between 0.4 0.4 typ V
S
= 0 V to V
DD
, I
DS
= 10 mA
Channels (R
ON
) 1.2 1.2 max
LEAKAGE CURRENTS V
DD
= 3.3 V
Source OFF Leakage I
S
(OFF) ± 0.01 ±0.01 nA typ V
S
= 3 V/1 V, V
D
= 1 V/3 V;
±20 ±0.1 ±0.3 nA max Test Circuit 2
Drain OFF Leakage I
D
(OFF) ±0.01 ± 0.01 nA typ V
S
= 3 V/1 V, V
D
= 1 V/3 V;
±20 ±0.1 ±0.75 nA max Test Circuit 3
Channel ON Leakage I
D
, I
S
(ON) ±0.01 ± 0.01 nA typ V
S
= V
D
= 1 V or 3 V, Test Circuit 4
±20 ±0.1 ±0.75 nA max
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 2.0 V min
Input Low Voltage, V
INL
0.4 0.4 V max
Input Current
I
INL
or I
INH
0.005 0.005 µA typ V
IN
= V
INL
or V
INH
±0.1 ±0.1 µA max
C
IN
, Digital Input Capacitance 2 2 pF typ
DYNAMIC CHARACTERISTICS
2
t
TRANSITION
18 18 ns typ R
L
= 300 , C
L
= 35 pF, Test Circuit 5
30 30 ns max V
S1
= 2 V/0 V, V
S2
= 0 V/2 V
Break-Before-Make Time Delay, t
D
8 8 ns typ R
L
= 300 , C
L
= 35 pF
1 1 ns min V
S
= 2 V, Test Circuit 6
t
ON
(EN) 18 18 ns typ R
L
= 300 , C
L
= 35 pF
30 30 ns max V
S
= 2 V, Test Circuit 7
t
OFF
(EN) 8 8 ns typ R
L
= 300 , C
L
= 35 pF
15 15 ns max V
S
= 2 V, Test Circuit 7
Charge Injection ±3 ±3 pC typ V
S
= 1.5 V, R
S
= 0 , C
L
= 1 nF;
Test Circuit 8
Off Isolation –60 –60 dB typ R
L
= 50 , C
L
= 5 pF, f = 10 MHz
–80 –80 dB typ R
L
= 50 , C
L
= 5 pF, f = 1 MHz;
Test Circuit 9
Channel-to-Channel Crosstalk –60 –60 dB typ R
L
= 50 , C
L
= 5 pF, f = 10 MHz
–80 –80 dB typ R
L
= 50 , C
L
= 5 pF, f = 1 MHz;
Test Circuit 10
–3 dB Bandwidth 55 55 MHz typ R
L
= 50 , C
L
= 5 pF, Test Circuit 9
C
S
(OFF) 13 13 pF typ
C
D
(OFF)
ADG708 85 85 pF typ
ADG709 42 42 pF typ
C
D
, C
S
(ON)
ADG708 96 96 pF typ
ADG709 48 48 pF typ
POWER REQUIREMENTS V
DD
= 3.3 V
I
DD
0.001 0.001 µA typ Digital Inputs = 0 V or 3.3 V
1.0 1.0 µA max
NOTES
1
Temperature ranges are as follows: B and C Versions: –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
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