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ADG704BRM

Part # ADG704BRM
Description ANLG MUX SGL 4:1 5.5V 10MSOP- Rail/Tube
Category IC
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
a
ADG704
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 World Wide Web Site: http://www.analog.com
Fax: 781/326-8703 © Analog Devices, Inc., 1999
CMOS
Low Voltage 4 , 4-Channel Multiplexer
FUNCTIONAL BLOCK DIAGRAM
ADG704
S1
S2
S3
S4
D
A0 A1
EN
1 OF 4
DECODER
FEATURES
+1.8 V to +5.5 V Single Supply
2.5 (Typ) On Resistance
Low On-Resistance Flatness
–3 dB Bandwidth >200 MHz
Rail-to-Rail Operation
10-Lead SOIC Package
Fast Switching Times
t
ON
20 ns
t
OFF
13 ns
Typical Power Consumption (<0.01 W)
TTL/CMOS Compatible
APPLICATIONS
Battery Powered Systems
Communication Systems
Sample-and-Hold Systems
Audio Signal Routing
Data Acquisition System
Video Switching
GENERAL DESCRIPTION
The ADG704 is a CMOS analog multiplexer, comprising four
single channels. This multiplexer is designed on an advanced
submicron process that provides low power dissipation yet gives
high switching speed, low on resistance, low leakage currents
and high bandwidths.
The on resistance profile is very flat over the full analog signal
range. This ensures excellent linearity and low distortion when
switching audio signals. Fast switching speed also makes the
part suitable for video signal switching.
The ADG704 can operate from a single supply range of +1.8 V
to +5.5 V, making it ideal for use in battery powered instru-
ments and with the new generation of DACs and ADCs from
Analog Devices.
The ADG704 switches one of four inputs to a common output,
D, as determined by the 3-bit binary address lines, A0, A1 and
EN. A Logic “0” on the EN pin disables the device.
Each switch of the ADG704 conducts equally well in both
directions when ON. The ADG704 exhibits break-before-make
switching action.
The ADG704 is available in 10-lead µSOIC package.
PRODUCT HIGHLIGHTS
1. +1.8 V to +5.5 V Single Supply Operation.
The ADG704 offers high performance and is fully specified
and guaranteed with +3 V and +5 V supply rails.
2. Very Low R
ON
(4.5 Max at 5 V, 8 Max at 3 V).
At supply voltage of +1.8 V, R
ON
is typically 35 over the
temperature range.
3. Low On-Resistance Flatness.
4. –3 dB Bandwidth Greater than 200 MHz.
5. Low Power Dissipation.
CMOS construction ensures low power dissipation.
6. Fast t
ON
/t
OFF
.
7. Break-Before-Make Switching Action.
8. 10-Lead µSOIC Package.
–2–
REV. A
ADG704–SPECIFICATIONS
1
(V
DD
= +5 V 10%, GND = 0 V. All Specifications –40C to +85C, unless
otherwise noted.)
B Version
–40C to
Parameter +25C +85C Units Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V
On-Resistance (R
ON
) 2.5 typ V
S
= 0 V to V
DD
, I
DS
= –10 mA;
4 4.5 max Test Circuit 1
On-Resistance Match Between
Channels (R
ON
) 0.1 typ V
S
= 0 V to V
DD
, I
DS
= –10 mA
0.4 max
On-Resistance Flatness (R
FLAT(ON)
)0.75 typ V
S
= 0 V to V
DD
, I
DS
= –10 mA
1.2 max
LEAKAGE CURRENTS V
DD
= +5.5 V
Source OFF Leakage I
S
(OFF) ±0.01 nA typ V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V;
±0.1 ±0.3 nA max Test Circuit 2
Drain OFF Leakage I
D
(OFF) ±0.01 nA typ V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V;
±0.1 ±0.3 nA max Test Circuit 2
Channel ON Leakage I
D
, I
S
(ON) ±0.01 nA typ V
S
= V
D
= 4.5 V or 1 V;
±0.1 ±0.3 nA max Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V
INH
2.4 V min
Input Low Voltage, V
INL
0.8 V max
Input Current
I
INL
or I
INH
0.005 µA typ V
IN
= V
INL
or V
INH
±0.1 µA max
DYNAMIC CHARACTERISTICS
2
t
ON
14 ns typ R
L
= 300 , C
L
= 35 pF
20 ns max V
S
= 3 V, Test Circuit 4
t
OFF
6 ns typ R
L
= 300 , C
L
= 35 pF
13 ns max V
S
= 3 V, Test Circuit 4
Break-Before-Make Time Delay, t
D
8 ns typ R
L
= 300 , C
L
= 35 pF
1 ns min V
S1
= V
S2
= 3 V, Test Circuit 5
Charge Injection 3 pC typ V
S
= 2 V, R
S
= 0 , C
L
= 1 nF;
Test Circuit 6
Off Isolation –60 dB typ R
L
= 50 , C
L
= 5 pF, f = 10 MHz
–80 dB typ R
L
= 50 , C
L
= 5 pF, f = 1 MHz;
Test Circuit 7
Channel-to-Channel Crosstalk –62 dB typ R
L
= 50 , C
L
= 5 pF, f = 10 MHz
–82 dB typ R
L
= 50 , C
L
= 5 pF, f = 1 MHz;
Test Circuit 8
Bandwidth –3 dB 200 MHz typ R
L
= 50 , C
L
= 5 pF; Test Circuit 9
C
S
(OFF) 9 pF typ
C
D
(OFF) 37 pF typ
C
D
, C
S
(ON) 54 pF typ
POWER REQUIREMENTS V
DD
= +5.5 V
Digital Inputs = 0 V or 5 V
I
DD
0.001 µA typ
1.0 µA max
NOTES
1
Temperature ranges are as follows: B Version: –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–3–REV. A
ADG704
SPECIFICATIONS
1
B Version
–40C to
Parameter +25C +85C Units Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V
On-Resistance (R
ON
) 4.5 5 typ V
S
= 0 V to V
DD
, I
DS
= –10 mA;
8 max Test Circuit 1
On-Resistance Match Between
Channels (R
ON
) 0.1 typ V
S
= 0 V to V
DD
, I
DS
= –10 mA
0.4 max
On-Resistance Flatness (R
FLAT(ON)
) 2.5 typ V
S
= 0 V to V
DD
, I
DS
= –10 mA
LEAKAGE CURRENTS V
DD
= +3.3 V
Source OFF Leakage I
S
(OFF) ±0.01 nA typ V
S
= 3 V/1 V, V
D
= 1 V/3 V;
±0.1 ±0.3 nA max Test Circuit 2
Drain OFF Leakage I
D
(OFF) ±0.01 nA typ V
S
= 3 V/1 V, V
D
= 1 V/3 V;
±0.1 ±0.3 nA max Test Circuit 2
Channel ON Leakage I
D
, I
S
(ON) ±0.01 nA typ V
S
= V
D
= 3 V or 1 V;
±0.1 ±0.3 nA max Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.4 V max
Input Current
I
INL
or I
INH
0.005 µA typ V
IN
= V
INL
or V
INH
±0.1 µA max
DYNAMIC CHARACTERISTICS
2
t
ON
16 ns typ R
L
= 300 , C
L
= 35 pF
24 ns max V
S
= 2 V, Test Circuit 4
t
OFF
8 ns typ R
L
= 300 , C
L
= 35 pF
16 ns max V
S
= 2 V, Test Circuit 4
Break-Before-Make Time Delay, t
D
9 ns typ R
L
= 300 , C
L
= 35 pF
1 ns min V
S1
= V
S2
= 2 V, Test Circuit 5
Charge Injection 3 pC typ V
S
= 1.5 V, R
S
= 0 , C
L
= 1 nF;
Test Circuit 6
Off Isolation –60 dB typ R
L
= 50 , C
L
= 5 pF, f = 10 MHz
–80 dB typ R
L
= 50 , C
L
= 5 pF, f = 1 MHz;
Test Circuit 7
Channel-to-Channel Crosstalk –62 dB typ R
L
= 50 , C
L
= 5 pF, f = 10 MHz
–82 dB typ R
L
= 50 , C
L
= 5 pF, f = 1 MHz;
Test Circuit 8
Bandwidth –3 dB 200 MHz typ R
L
= 50 , C
L
= 5 pF; Test Circuit 9
C
S
(OFF) 9 pF typ
C
D
(OFF) 37 pF typ
C
D
, C
S
(ON) 54 pF typ
POWER REQUIREMENTS V
DD
= +3.3 V
Digital Inputs = 0 V or 3 V
I
DD
0.001 µA typ
1.0 µA max
NOTES
1
Temperature ranges are as follows: B Version: –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(V
DD
= +3 V 10%, GND = 0 V. All Specifications –40C to +85C, unless otherwise noted.)
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