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ADG408BR

Part # ADG408BR
Description ANLG MUX SGL 8:1 22V/32V 16SOIC N - Rail/Tube
Category IC
Availability Out of Stock
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1 + $1.66577



Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

ADG408/ADG409
REV. A
–4–
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= +25°C unless otherwise noted)
V
DD
to V
SS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+44 V
V
DD
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +25 V
V
SS
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –25 V
Analog, Digital Inputs
2
. . . . . V
SS
–2 V to V
DD
+2 V or 20 mA,
Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 20 mA
Peak Current, S or D
(Pulsed at 1 ms, 10% Duty Cycle max) . . . . . . . . . . . 40 mA
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . . –40°C to +85°C
Extended (T Version) . . . . . . . . . . . . . . . . –55°C to +125°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Cerdip Package, Power Dissipation . . . . . . . . . . . . . . . 900 mW
θ
JA
, Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 76°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . +300°C
Plastic Package, Power Dissipation . . . . . . . . . . . . . . . 470 mW
θ
JA
, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 117°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . +260°C
TSSOP Package, Power Dissipation . . . . . . . . . . . . . . 450 mW
θ
JA
, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 155°C/W
θ
JC
, Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 50°C/W
SOIC Package, Power Dissipation . . . . . . . . . . . . . . . . 600 mW
θ
JA
, Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 77°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . +215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . +220°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
2
Overvoltages at A, EN, S or D will be clamped by internal diodes. Current should
be limited to the maximum ratings given.
ORDERING INFORMATION
Model
1
Temperature Range Package Option
2
ADG408BN –40°C to +85°C N-16
ADG408BR –40°C to +85°C R-16A
ADG408BRU –40°C to +85°C RU-16
ADG408TQ –55°C to +125°C Q-16
ADG409BN –40°C to +85°C N-16
ADG409BR –40°C to +85°C R-16A
ADG409TQ –55°C to +125°C Q-16
NOTES
1
To order MIL-STD-883, Class B processed parts, add /883B to T grade part
numbers.
2
N = Plastic DIP; Q = Cerdip; R = 0.15" Small Outline IC (SOIC);
RU = Think Shrink Small Outline Package (TSSOP).
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG408/ADG409 feature proprietary ESD protection circuitry, permanent
damage may occur on devices subjected to high energy electrostatic discharges. Therefore,
proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
ADG408/ADG409
REV. A
–5–
TERMINOLOGY
V
DD
Most positive power supply potential.
V
SS
Most negative power supply potential in dual
supplies. In single supply applications, it may
be connected to ground.
GND Ground (0 V) reference.
R
ON
Ohmic resistance between D and S.
R
ON
Difference between the R
ON
of any two
channels.
I
S
(OFF) Source leakage current when the switch is off.
I
D
(OFF) Drain leakage current when the switch is off.
I
D
, I
S
(ON) Channel leakage current when the switch is on.
V
D
(V
S
) Analog voltage on terminals D, S.
C
S
(OFF) Channel input capacitance for “OFF”
condition.
C
D
(OFF) Channel output capacitance for “OFF”
condition.
C
D
, C
S
(ON) “ON” switch capacitance.
C
IN
Digital input capacitance.
t
ON
(EN) Delay time between the 50% and 90% points of
the digital input and switch “ON” condition.
t
OFF
(EN) Delay time between the 50% and 90% points of
the digital input and switch “OFF” condition.
t
TRANSITION
Delay time between the 50% and 90% points of
the digital inputs and the switch “ON” condition
when switching from one address state to another.
t
OPEN
“OFF” time measured between the 80% point
of both switches when switching from one
address state to another.
V
INL
Maximum input voltage for Logic “0.”
V
INH
Minimum input voltage for Logic “1.”
I
INL
(I
INH
) Input current of the digital input.
Crosstalk A measure of unwanted signal which is coupled
through from one channel to another as a result
of parasitic capacitance.
Off Isolation A measure of unwanted signal coupling through
an “OFF” channel.
Charge A measure of the glitch impulse transferred
Injection from the digital input to the analog output
during switching.
I
DD
Positive supply current.
I
SS
Negative supply current.
PIN CONFIGURATIONS (DIP/SOIC/TSSOP)
TOP VIEW
(Not to Scale)
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
A0
EN
V
SS
S1
S2
S3
S4
D
A1
A2
GND
V
DD
S5
S6
S7
S8
ADG408
TOP VIEW
(Not to Scale)
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
A0
EN
V
SS
S1A
S2A
S3A
S4A
DA
A1
GND
V
DD
S1B
S2B
S3B
S4B
DB
ADG409
ADG408 Truth Table
ON
A2 A1 A0 EN SWITCH
X X X 0 NONE
00011
00112
01013
01114
10015
10116
11017
11118
ADG409 Truth Table
ON SWITCH
Al A0 EN PAIR
X X 0 NONE
0011
0112
1013
1114
ADG408/ADG409
REV. A
–6–
Typical Performance Characteristics
V
D
(V
S
) – Volts
120
20
–15 15–10
R
ON
V
–5 0 5 10
80
40
100
60
V
DD
= +10V
V
SS
= –10V
V
DD
= +5V
V
SS
= –5V
V
DD
= +12V
V
SS
= –12V
V
DD
= +15V
V
SS
= –15V
T
A
= +258C
Figure 1. R
ON
as a Function of V
D
(V
S
): Dual Supply Voltage
V
D
(V
S
) – Volts
100
30
–15 15–10
R
ON
V
–5 0 5 10
80
70
50
40
60
90
+1258C
+858C
+258C
V
DD
= +15V
V
SS
= –15V
Figure 2. R
ON
as a Function of V
D
(V
S
) for Different
Temperatures
V
D
(V
S
) – Volts
0.2
–0.2
LEAKAGE CURRENT – nA
0
–0.1
0.1
–15 15–10 –5 0 5 10
T
A
= +258C
V
DD
= +15V
V
SS
= –15V
I
S
(OFF)
I
D
(ON)
I
D
(OFF)
Figure 3. Leakage Currents as a Function of V
D
(V
S
)
V
D
(V
S
) – Volts
180
40
0153
R
ON
V
6912
140
120
80
60
160
100
T
A
= +258C
V
DD
= +5V
V
SS
= 0V
V
DD
= +12V
V
SS
= 0V
V
DD
= +15V
V
SS
= 0V
V
DD
= +10V
V
SS
= 0V
Figure 4. R
ON
as a Function of V
D
(V
S
): Single Supply
Voltage
V
D
(V
S
) – Volts
130
60
0122
R
ON
V
46810
100
80
70
90
120
V
DD
= +12V
V
SS
= 0V
+1258C
+858C
+258C
110
Figure 5. R
ON
as a Function of V
D
(V
S
) for Different
Temperatures
V
D
(V
S
) – Volts
0.04
–0.06
0122
LEAKAGE CURRENT – nA
46810
0
–0.04
0.02
–0.02
T
A
= +258C
V
DD
= +12V
V
SS
= 0V
I
S
(OFF)
I
D
(ON)
I
D
(OFF)
Figure 6. Leakage Currents as a Function of V
D
(V
S
)
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