1
TO-220AB
Item Symbol Ratings Unit Remarks
Drain-source voltage VDS 250
VDSX 220
Continuous Drain Current ID 34
Pulsed Drain Current ID(puls] ±136
Gate-Source Voltage VGS ±30
Maximum Avalanche current IAR 34
Non-Repetitive EAS 665.7
Maximum Avalanche Energy
Repetitive EAR 27
Maximum Avalanche Energy
Maximum Drain-Source dV/dt dVDS/dt 20
Peak Diode Recovery dV/dt dV/dt 5
Peak Diode Recovery -di/dt -di/dt 100
Max. Power Dissipation PD 270
2.02
Operating and Storage Tch +150
Temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3925-01
FUJI POWER MOSFET
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero Gate Voltage Drain Current IDSS
VDS=250V VGS=0V
VDS=200V VGS=0V
VGS=±30V
ID=17A VGS=10V
ID=17A VDS=25V
VCC=48V ID=17A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
mA
nA
mΩ
S
pF
nC
V
ns
µC
ns
Min. Typ. Max. Units
Thermal resistance
Rth(ch-c) channel to case
Rth(ch-a) channel to ambient
0.463
62
°C/W
°C/W
Symbol
BVDSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Item
Drain-Source Breakdown Voltaget
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transcondutance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250
µ
A VGS=0V
ID= 250
µ
A VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MH
VCC=125V
ID=34A
VGS=10V
IF=34A VGS=0V Tch=25°C
IF=34A VGS=0V
-di/dt=100A/µs
Tch=25°C
V
V
A
A
V
A
mJ
mJ
kV/µs
kV/µs
A/µs
W
°C
°C
250
3.0 5.0
25
2.0
100
85 110
13 26
1850 2800
220 330
21 32
20 30
19 29
56 85
19 29
56 85
20 30
19 29
1.00 1.50
140 250
0.5 1.25
-55 to +150
Outline Drawings (mm)
www.fujielectric.co.jp/fdt/scd
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
200406
VGS=-30V
Note *1
Note *2
Note *3
VDS 250V
Note *4
Note *5
Tc=25°C
Ta=25°C
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Features
High speed switching Low on-resistance
No secondary breadown Low driving power
Avalanche-proof
Applications
Switching regulators DC-DC converters
UPS (Uninterruptible Power Supply)
Gate(G)
Source(S)
Drain(D)
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Note *1:Tch 150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,IAS=14A,L=5.71mH,
VCC=48V,RG=50Ω
EAS limited by maximum channel temperature
and avalanch current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Theemal impedance’
graph
Note *4:I
F -ID, -di/dt=100A/µs,VCC BVDSS,Tch 150°C
Note *5:I
F -ID, dv/dt=5kV/µs,VCC BVDSS,Tch 150°C
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