Philips Semiconductors Product specification
PowerMOS transistors PHP7N40E, PHB7N40E
Avalanche energy rated
ELECTRICAL CHARACTERISTICS
T
j
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown V
GS
= 0 V; I
D
= 0.25 mA 400 - - V
voltage
∆V
(BR)DSS
/ Drain-source breakdown V
DS
= V
GS
; I
D
= 0.25 mA - 0.1 - %/K
∆T
j
voltage temperature
coefficient
R
DS(ON)
Drain-source on resistance V
GS
= 10 V; I
D
= 3.6 A - 0.7 1 Ω
V
GS(TO)
Gate threshold voltage V
DS
= V
GS
; I
D
= 0.25 mA 2.0 3.0 4.0 V
g
fs
Forward transconductance V
DS
= 30 V; I
D
= 3.6 A 2 4 - S
I
DSS
Drain-source leakage current V
DS
= 400 V; V
GS
= 0 V - 1 25 µA
V
DS
= 320 V; V
GS
= 0 V; T
j
= 125 ˚C - 30 250 µA
I
GSS
Gate-source leakage current V
GS
= ±30 V; V
DS
= 0 V - 10 200 nA
Q
g(tot)
Total gate charge I
D
= 7.2 A; V
DD
= 320 V; V
GS
= 10 V - 52 62 nC
Q
gs
Gate-source charge - 3 5 nC
Q
gd
Gate-drain (Miller) charge - 26 30 nC
t
d(on)
Turn-on delay time V
DD
= 200 V; R
D
= 27 Ω; - 12 - ns
t
r
Turn-on rise time R
G
= 12 Ω -33-ns
t
d(off)
Turn-off delay time - 93 - ns
t
f
Turn-off fall time - 42 - ns
L
d
Internal drain inductance Measured from tab to centre of die - 3.5 - nH
L
d
Internal drain inductance Measured from drain lead to centre of die - 4.5 - nH
(SOT78 package only)
L
s
Internal source inductance Measured from source lead to source - 7.5 - nH
bond pad
C
iss
Input capacitance V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz - 620 - pF
C
oss
Output capacitance - 108 - pF
C
rss
Feedback capacitance - 63 - pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
T
j
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
S
Continuous source current T
mb
= 25˚C - - 7.2 A
(body diode)
I
SM
Pulsed source current (body T
mb
= 25˚C - - 29 A
diode)
V
SD
Diode forward voltage I
S
= 7.2 A; V
GS
= 0 V - - 1.2 V
t
rr
Reverse recovery time I
S
= 7.2 A; V
GS
= 0 V; dI/dt = 100 A/µs - 270 - ns
Q
rr
Reverse recovery charge - 3.3 - µC
December 1998 3 Rev 1.200
