Product Brief
PE42632
Page 2 of 4
©2007 Peregrine Semiconductor Corp. All rights reserved. Document No. 70-0226-01 UltraCMOS™ RFIC Solutions
Contact sales@psemi.com for full version of datasheet
Table 2. Operating Ranges Table 3. Absolute Maximum Ratings
Part performance is not guaranteed under these
conditions. Exposure to absolute maximum conditions
for extended periods of time may adversely affect
reliability. Stresses in excess of absolute maximum
ratings may cause permanent damage.
Table 1. Electrical Specifications @ +25 °C, V
DD
= 2.5 - 2.8 V (Z
S
= Z
L
= 50 )
Parameter Conditions Typical Units
Operational Frequency 100-3000 MHz
Insertion Loss
1
ANT - TX - 850 / 900 MHz
ANT - TX - 1800 / 1900 MHz
ANT - RX - 850 / 900 MHz
ANT - RX - 1800 / 1900 MHz
0.55
0.6
0.9
1.15
dB
dB
dB
dB
Isolation
TX - RX - 850 / 900 MHz
TX - RX - 1800 / 1900 MHz
TX - TX - 850 / 900 MHz
TX - TX - 1800 / 1900 MHz
38
31
31
26
dB
dB
dB
dB
Return Loss
850 / 900 MHz
1800 / 1900 MHz
23
22
dB
2nd Harmonic
2,3
35 dBm TX Input - 850 / 900 MHz
33 dBm TX Input - 1800 / 1900 MHz
-90
-89
dBc
3rd Harmonic
2,3
35 dBm TX Input - 850 / 900 MHz
33 dBm TX Input - 1800 / 1900 MHz
-82
-80
dBc
Switching Time
4
50% Control Logic to 90% RF 1 µs
Notes: 1. Insertion loss specified with optimal ANT impedance matching.
2. Measured in Pulsed Wave Mode.
3. Assumes RF input duty cycle of 50% and 4620 µs, measured per 3GPP TS 45.005
4. Power on any port must not exceed +20 dBm during switching event.
Note: 5. Assumes RF input period of 4620 µs and duty cycle of 50%.
Parameter Symbol Min Typ Max Units
Temperature range T
OP
-40 +85 °C
V
DD
Supply Voltage V
DD
2.5 2.70 2.8 V
I
DD
Power Supply Current
(V
DD
= 2.75 V)
I
DD
13 20 µA
TX input power
5
(VSWR 3:1)
824-915 MHz
+35
dBm
TX input power
5
(VSWR 3:1)
1710-1910 MHz
+33
RX input power
5
(VSWR =1:1) P
IN
+20 dBm
Control Voltage High V
IH
0.7 x
V
DD
V
Control Voltage Low V
IL
0.3 x
V
DD
V
P
IN
Symbol Parameter/Conditions Min Max Units
V
DD
Power supply voltage -0.3 4.0 V
V
I
Voltage on any DC input -0.3
V
DD
+
0.3
V
T
ST
Storage temperature range -65 +150 °C
T
OP
Operating temperature range -40 +85 °C
P
IN
(50 )
TX input power (50 )
6,7
824-915 MHz
+38
dBm
TX input power (50 )
6,7
1710-1910 MHz
+36
RX input power (50 )
7
+23
P
IN
( :1)
TX input power (VSWR = ( :1)
6,7
824-915 MHz
+35
dBm
dBm
TX input power (VSWR = ( :1)
6,7
1710-1910 MHz
+33
V
ESD
ESD Voltage (HBM, MIL_STD
883 Method 3015.7)
1500 V
ESD Voltage (MM, JEDEC,
JESD22-A114-B)
100 V
Notes: 6. Assumes RF input period of 4620 µs and duty cycle of 50%.
7. V
DD
within operating range specified in Table 2.
