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RB521CS-30T2R

Part # RB521CS-30T2R
Description Diode Small Signal Schottky 30V 0.1A 2-Pin VMN T/R (Alt: R
Category DIODE
Availability In Stock
Qty 40000
Qty Price
1 - 1,575 $0.09520
1,576 - 3,961 $0.07573
3,962 - 7,703 $0.07140
7,704 - 11,680 $0.06635
11,681 + $0.05914
Manufacturer Available Qty
ROHM
Date Code: 1628
  • Shipping Freelance Stock: 8000
    Ships Immediately
ROHM
Date Code: 1615
  • Shipping Freelance Stock: 16000
    Ships Immediately
ROHM
Date Code: 1635
  • Shipping Freelance Stock: 16000
    Ships Immediately

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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

www.rohm.com
©2009 ROHM Co., Ltd. All rights reserved.
Schottky barrier diode
RB521CS-30
zApplications zDimensions (Unit : mm) zLand size figure (Unit : mm)
Low current rectification
zFeatures
1) Ultra Small power mold type
(VMN2)
2) Low V
F
3) High reliability
zStructure
zStructure
Silicon epitaxial planer
zTaping dimensions (Unit : mm)
zAbsolute maximum ratings (Ta=25°C)
Symbol Unit
V
R
V
Io mA
I
FSM
mA
Tj
°C
Tstg °C
zElectrical characteristic (Ta=25°C)
Symbol Min. Typ. Max. Unit
V
F
- - 0.35 V
I
F
=10mA
I
R
- - 10 µA
V
R
=10V
Junction temperature 150
Storage temperature -40 to +150
Average rectifierd forward current 100
Forward current surge peak (60Hz/1cyc) 500
Parameter Limits
Reverse voltage (DC) 30
Parameter Conditions
Forward vpltage
Reverse current
0.7±0.05
4.0±0.1
2±0.05
φ0.5
4±0.1
2±0.05
φ1.55
1.75±0.1
8.0±0.2
3.5±0.05
1.1±0.05
0.2±0.05
0.52
ROHM:V M N 2
d o t (y e a rw e e k fa c to ry )+ d a y
0.16±0.05
0.37±0.03
0.6±0.05
0.35±0.1
0.9±0.05
1.0±0.05
VMN2
0.55
0.5
0.45
0.45
1/3
2009.12 - Rev.B
RB521CS-30
　
zElectrical characteristic curves
0
0.02
0.04
0.06
0.08
0.1
0102030
0
0.02
0.04
0.06
0.08
0.1
0 0.1 0.2
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
1ms
IM=10mA I
F
=100mA
300us
tim
Mounted on epoxy board
0
5
10
1 10 100
t
Ifsm
0
5
10
1 10 100
8.3ms
Ifsm
1cyc
8.3ms
0
5
10
15
20
AVE:3.90A
10
11
12
13
14
15
16
17
18
19
20
AVE:17.34pF
Ta=25℃
f=1MHz
V
R
=0V
n=10pcs
0
5
10
15
20
25
30
250
260
270
280
290
300
AVE:270.2mV
1
10
100
0 5 10 15 20
0.01
0.1
1
10
100
1000
10000
0102030
0.001
0.01
0.1
1
10
100
1000
0 100 200 300 400 500 600
FORWARD VOLTAGE : V
F
(mV)
V
F
-I
F
CHARACTERISTICS
FORWARD CURRENT:I
F
(mA)
REVERSE CURRENT:I
R
(uA)
REVERSE VOLTAGE : V
R
(V)
V
R
-I
R
CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE : V
R
(V)
V
R
-Ct CHARACTERISTICS
V
F
DISPERSION MAP
FORWARD VOLTAGE:V
F
(mV)
REVERSE CURRENT:I
R
(uA)
I
R
DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
I
FSM
DISRESION MAP
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
TIME1:t(ms)
I
FSM
-t CHARACTERISTICS
TIME : t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (
°
C/W)
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
REVERSE POWER
DISSIPATION:P
R
(W)
REVERSE VOLTAGE : V
R
(V)
V
R
-P
R
CHARACTERISTICS
f=1MHｚ
Ta=25°C
I
F
=10mA
n=30pcs
Ta=25°C
V
R
=10V
n=30pcs
AVE:2.017uA
Ta=-25°C
Ta=125°C
Ta=25°C
Ta=75°C
Ta=−25°C
Ta=125°C
Ta=75°C
Ta=25°C
8.3ms
Ifsm
1cyc
DC
D=1/2
Sin(θ=180)
Sin(θ=180)
DC
D=1/2
2/3
2009.12 - Rev.B
Data Sheet
www.rohm.com
©2009 ROHM Co., Ltd. All rights reserved.
RB521CS-30
　
0
0.1
0.2
0.3
0 25 50 75 100 125
0
0.1
0.2
0.3
0 25 50 75 100 125
AMBIENT TEMPERATURE : Ta(°C)
Derating Curve"(Io-Ta)
AVERAGE RECTIFIDE
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
CASE TEMPARATURE : Tc(°C)
Derating Curve"(Io-Tc)
Sin(θ=180)
DC
D=1/2
T
Tj=125°C
D=t/T
t
V
R
Io
V
R
=15V
0A
0V
T
Tj=125°C
D=t/T
t
V
R
Io
V
R
=15V
0A
0V
Sin(θ=180)
DC
D=1/2
2/3
2009.12 - Rev.B
Data Sheet
www.rohm.com
©2009 ROHM Co., Ltd. All rights reserved.
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