November 2006 Rev 5 1/7
7
STTH102
High efficiency ultrafast diode
Main product characteristics
Features and benefits
■ Very low conduction losses
■ Negligible switching losses
■ Low forward and reverse recovery times
■ High junction temperature
Description
The STTH102, which is using ST’s new 200 V
planar technology, is specially suited for switching
mode base drive and transistor circuits. The
device is also intended for use as a free wheeling
diode in power supplies and other power
switching applications.
Order codes
I
F(AV)
1 A
V
RRM
200 V
T
j
(max) 175° C
V
F
(max) 0.78 V
t
rr
(max) 20 ns
Part Number Marking
STTH102A U12
STTH102 STTH102
STTH102RL STTH102
K
A
K
A
SMA
(JEDEC DO-214AC)
STTH102A
DO-41
STTH102
Table 1. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 200 V
I
F(AV)
Average forward current
SMA T
L
= 148° C δ = 0.5
1A
DO-41 T
L
= 130° C δ = 0.5
I
FSM
Surge non repetitive forward
current
SMA
tp = 10 ms Sinusoidal
40
A
DO-41 50
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature 175 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
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