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ZLLS350TA

Part # ZLLS350TA
Description 40V LOW LEAKAGE SCHOTTKY DIDOES
Category DIODE
Availability Out of Stock
Qty 0
Qty Price
1 + $0.23963



Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

SEMICONDUCTORS
SUMMARY
V
R
= 40V; I
FAV
= 650mA;
V
F
= 570mV typ @ 100mA; I
R
= 1µA typ @ 30V
DESCRIPTION
Packaged in the SOD523 package this addition to the Zetex Low Leakage
Schottky diode range offers an ideal low V
F
/I
R
performance combined with a
low package height of 0.9mm making the device suitable for various
converter, charger, and LED driver circuits.
FEATURES
Low V
F
380mA continuous current rating
Low profile SOD523 package (0.9mm)
APPLICATIONS
DC - DC converters
Mobile telecomms
Charger circuits
LED driver circuits
MOSFET voltage protection circuits
DEVICE MARKING
53
ZLLS350
ISSUE 1 - MAY 2005
SOD523 40V LOW LEAKAGE SCHOTTKY BARRIER DIODE
1
S
O
D
5
2
3
PINOUT
TOP VIEW
DEVICE REEL
SIZE
TAPE WIDTH
QUANTITY PER
REEL
ZLLS350TA 7" 8mm
embossed
3,000 units
ZLLS350TC 13" 8mm
embossed
10,000 units
ORDERING INFORMATION
ZLLS350
SEMICONDUCTORS
ISSUE 1 - MAY 2005
2
PARAMETER SYMBOL LIMIT UNIT
Continuous reverse voltage V
R
40 V
Continuous forward current I
F
380 mA
Average peak forward current; D.C. = 50% I
FAV
650 mA
Non repetitive forward current t < 100S
< 10mS
I
FSM
6.0
1.3
A
A
Power dissipation at T
A
=25°C
(a)
P
D
357 mW
Power dissipation at T
A
=25°C
(b)
P
D
413 mW
Operating and storage temperature range T
stg
-55 to +150 °C
Junction temperature T
j
150 °C
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction to ambient
(a)
R
JA
350 °C/W
Junction to ambient
(b)
R
JA
303 °C/W
NOTES:
(a) For a single device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of 1oz copper in still air conditions.
(b) As (a) above measured at t<5 secs.
THERMAL RESISTANCE
ZLLS350
SEMICONDUCTORS
ISSUE 1 - MAY 2005
3
CHARACTERISTICS
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