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MUN5316DW1T1

Part # MUN5316DW1T1
Description TRANS PREBIAS NPN/PNP SOT363
Category DIODE
Availability In Stock
Qty 3000
Qty Price
1 - 164 $0.91260
165 - 413 $0.72593
414 - 803 $0.68445
804 - 1,218 $0.63605
1,219 + $0.56692
Manufacturer Available Qty
ON Semiconductor
Date Code: 0101
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN and PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a
monolithic bias network consisting of two resistors; a series base resistor and a
base–emitter resistor. These digital transistors are designed to replace a single
device and its external resistor bias network. The BRT eliminates these
individual components by integrating them into a single device. In the
MUN5311DW1T1 series, two complementary BRT devices are housed in the
SOT–363 package which is ideal for low power surface mount applications
where board space is at a premium.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
, – minus sign for Q
2
(PNP) omitted)
Rating Symbol Value Unit
Collector-Base Voltage V
CBO
50 Vdc
Collector-Emitter Voltage V
CEO
50 Vdc
Collector Current I
C
100 mAdc
THERMAL CHARACTERISTICS
Thermal Resistance — Junction-to-Ambient (surface mounted) R
θJA
833 °C/W
Operating and Storage Temperature Range T
J
, T
stg
65 to +150 °C
Total Package Dissipation @ T
A
= 25°C
(1)
P
D
*150 mW
DEVICE MARKING AND RESISTOR VALUES: MUN5311DW1T1 SERIES
Device Marking R1 (K) R2 (K)
MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
(2)
11
12
13
14
15
10
22
47
10
10
10
22
47
47
MUN5316DW1T1
(2)
MUN5330DW1T1
(2)
MUN5331DW1T1
(2)
MUN5332DW1T1
(2)
MUN5333DW1T1
(2)
MUN5334DW1T1
(2)
MUN5335DW1T1
(2)
16
30
31
32
33
34
35
4.7
1.0
2.2
4.7
4.7
22
2.2
1.0
2.2
4.7
47
47
47
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MUN5311DW1T1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Devices
CASE 419B–01, STYLE 1
SOT–363
Q
1
R
1
R
2
R
2
R
1
Q
2
(1)(2)(3)
(4) (5) (6)
1
2
3
6
5
4
Motorola, Inc. 1997
REV 3
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
, – minus sign for Q
2
(PNP) omitted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0) I
CBO
100 nAdc
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0) I
CEO
500 nAdc
Emitter-Base Cutoff Current MUN5311DW1T1
(V
EB
= 6.0 V, I
C
= 0) MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
I
EBO
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
mAdc
Collector-Base Breakdown Voltage (I
C
= 10 µA, I
E
= 0) V
(BR)CBO
50 Vdc
Collector-Emitter Breakdown Voltage
(3)
(I
C
= 2.0 mA, I
B
= 0) V
(BR)CEO
50 Vdc
ON CHARACTERISTICS
(3)
DC Current Gain MUN5311DW1T1
(V
CE
= 10 V, I
C
= 5.0 mA) MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
Collector-Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5 mA) MUN5330DW1T1/MUN5331DW1T1
(I
C
= 10 mA, I
B
= 1 mA) MUN5315DW1T1/MUN5316DW1T1
MUN5332DW1T1/MUN5333DW1T1/MUN5334DW1T1
V
CE(sat)
0.25 Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 k) MUN5311lDW1T1
MUN5312DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 k) MUN5313DW1T1
V
OL
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
, – minus sign for Q
2
(PNP) omitted)
(Continued)
Characteristic
Symbol Min Typ Max Unit
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 k)
(V
CC
= 5.0 V, V
B
= 0.050 V, R
L
= 1.0 k) MUN5330DW1T1
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 k) MUN5315DW1T1
MUN5316DW1T1
MUN5333DW1T1
V
OH
4.9 Vdc
Input Resistor MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
R1 7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
k
Resistor Ratio MUN5311DW1T1/MUN5312DW1T1/MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1/MUN5316DW1T1
MUN5330DW1T1/MUN5331DW1T1/MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
R1/R2 0.8
0.17
0.8
0.055
0.38
0.038
1.0
0.21
1.0
0.1
0.47
0.047
1.2
0.25
1.2
0.185
0.56
0.056
Figure 1. Derating Curve
250
200
150
100
50
0
50 0 50 100 150
T
A
, AMBIENT TEMPERATURE (
°
C)
P
D
, POWER DISSIPATION (MILLIWATTS)
R
θ
JA
= 833
°
C/W
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