1N5333B Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted, V
F
= 1.2 V Max @ I
F
= 1.0 A for all types)
Device
†
(Note 1)
Device
Marking
Zener Voltage (Note 2) Zener Impedance (Note 2)
Leakage
Current
I
R
(Note 3
DV
Z
(Note 4
I
ZM
(Note 5
V
Z
(Volts) @ I
ZT
Z
ZT
@ I
ZT
Z
ZK
@ I
ZK
I
ZK
I
R
@ V
R
Min Nom Max mA
W W
mA
mA Max
Volts A Volts mA
1N5333B, G 1N5333B 3.14 3.3 3.47 380 3 400 1 300 1 20 0.85 1440
1N5334B, G 1N5334B 3.42 3.6 3.78 350 2.5 500 1 150 1 18.7 0.8 1320
1N5335B, G 1N5335B 3.71 3.9 4.10 320 2 500 1 50 1 17.6 0.54 1220
1N5336B, G 1N5336B 4.09 4.3 4.52 290 2 500 1 10 1 16.4 0.49 1100
1N5337B, G 1N5337B 4.47 4.7 4.94 260 2 450 1 5 1 15.3 0.44 1010
1N5338B, G 1N5338B 4.85 5.1 5.36 240 1.5 400 1 1 1 14.4 0.39 930
1N5339B, G 1N5339B 5.32 5.6 5.88 220 1 400 1 1 2 13.4 0.25 865
1N5340B, G 1N5340B 5.70 6.0 6.30 200 1 300 1 1 3 12.7 0.19 790
1N5341B, G 1N5341B 5.89 6.2 6.51 200 1 200 1 1 3 12.4 0.1 765
1N5342B, G 1N5342B 6.46 6.8 7.14 175 1 200 1 10 5.2 11.5 0.15 700
1N5343B, G 1N5343B 7.13 7.5 7.88 175 1.5 200 1 10 5.7 10.7 0.15 630
1N5344B, G 1N5344B 7.79 8.2 8.61 150 1.5 200 1 10 6.2 10 0.2 580
1N5345B, G 1N5345B 8.27 8.7 9.14 150 2 200 1 10 6.6 9.5 0.2 545
1N5346B, G 1N5346B 8.65 9.1 9.56 150 2 150 1 7.5 6.9 9.2 0.22 520
1N5347B, G 1N5347B 9.50 10 10.5 125 2 125 1 5 7.6 8.6 0.22 475
1N5348B, G 1N5348B 10.45 11 11.55 125 2.5 125 1 5 8.4 8.0 0.25 430
1N5349B, G 1N5349B 11.4 12 12.6 100 2.5 125 1 2 9.1 7.5 0.25 395
1N5350B, G 1N5350B 12.35 13 13.65 100 2.5 100 1 1 9.9 7.0 0.25 365
1N5351B, G 1N5351B 13.3 14 14.7 100 2.5 75 1 1 10.6 6.7 0.25 340
1N5352B, G 1N5352B 14.25 15 15.75 75 2.5 75 1 1 11.5 6.3 0.25 315
1N5353B, G 1N5353B 15.2 16 16.8 75 2.5 75 1 1 12.2 6.0 0.3 295
1N5354B, G 1N5354B 16.15 17 17.85 70 2.5 75 1 0.5 12.9 5.8 0.35 280
1N5355B, G 1N5355B 17.1 18 18.9 65 2.5 75 1 0.5 13.7 5.5 0.4 264
1N5356B, G 1N5356B 18.05 19 19.95 65 3 75 1 0.5 14.4 5.3 0.4 250
1N5357B, G 1N5357B 19 20 21 65 3 75 1 0.5 15.2 5.1 0.4 237
1N5358B, G 1N5358B 20.9 22 23.1 50 3.5 75 1 0.5 16.7 4.7 0.45 216
1N5359B, G 1N5359B 22.8 24 25.2 50 3.5 100 1 0.5 18.2 4.4 0.55 198
1N5360B, G 1N5360B 23.75 25 26.25 50 4 110 1 0.5 19 4.3 0.55 190
1N5361B, G 1N5361B 25.65 27 28.35 50 5 120 1 0.5 20.6 4.1 0.6 176
1N5362B, G 1N5362B 26.6 28 29.4 50 6 130 1 0.5 21.2 3.9 0.6 170
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.
1. TOLERANCE AND TYPE NUMBER DESIGNATION
The JEDEC type numbers shown indicate a tolerance of ±5%.
2. ZENER VOLTAGE (V
Z
) and IMPEDANCE (I
ZT
and I
ZK
)
Test conditions for zener voltage and impedance are as follows: I
Z
is applied 40 ±10 ms prior to reading. Mounting contacts are located 3/8″
to 1/2″ from the inside edge of mounting clips to the body of the diode (T
A
= 25°C +8°C, −2°C).
3. SURGE CURRENT (I
R
)
Surge current is specified as the maximum allowable peak, non−recurrent square−wave current with a pulse width, PW, of 8.3 ms. The data
given in Figure 5 may be used to find the maximum surge current for a square wave of any pulse width between 1 ms and 1000 ms by plotting
the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in Figure 6. Mounting contact located
as specified in Note 2 (T
A
= 25°C +8°C, −2°C).
4. VOLTAGE REGULATION (DV
Z
)
The conditions for voltage regulation are as follows: V
Z
measurements are made at 10% and then at 50% of the I
Z
max value listed in the
electrical characteristics table. The test current time duration for each V
Z
measurement is 40 ±10 ms. Mounting contact located as specified
in Note 2 (T
A
= 25°C +8°C, −2°C).
5. MAXIMUM REGULATOR CURRENT (I
ZM
)
The maximum current shown is based on the maximum voltage of a 5% type unit, therefore, it applies only to the B−suffix device. The actual
I
ZM
for any device may not exceed the value of 5 watts divided by the actual V
Z
of the device. T
L
= 75°C at 3/8″ maximum from the device
body.
†The “G’’ suffix indicates Pb−Free package available.
