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1N5908RL4

Part # 1N5908RL4
Description Diode TVS Single Uni-Dir 5V 1.5KW 2-Pin Case 41A-02 T/R
Category DIODE
Availability Out of Stock
Qty 0
Qty Price
1 + $0.08002

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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

© Semiconductor Components Industries, LLC, 2005
July, 2005 − Rev. 4
1 Publication Order Number:
1N5908/D
1N5908
1500 Watt Mosorbt Zener
Transient Voltage Suppressors
Unidirectional*
Mosorb devices are designed to protect voltage sensitive
components from high voltage, high−energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetic axial leaded package and are ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.
Features
• Working Peak Reverse Voltage Range − 5 V
• Peak Power − 1500 Watts @ 1 ms
• Maximum Clamp Voltage @ Peak Pulse Current
• Low Leakage < 5 mA Above 10 V
• Response Time is Typically < 1 ns
• Pb−Free Packages are Available
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16″ from the case for 10 seconds
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
A = Assembly Location
1N5908 = JEDEC Device Number
YY = Year
WW = Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
A
1N
5908
YYWW
http://onsemi.com
AXIAL LEAD
CASE 41A
PLASTIC
Cathode Anode
Device Package Shipping
†
ORDERING INFORMATION
1N5908 Axial Lead 500 Units/Box
1N5908RL4 Axial Lead 1500/Tape & Reel
1N5908G Axial Lead
(Pb−Free)
500 Units/Box
1N5908RL4G Axial Lead
(Pb−Free)
1500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
Uni−Directional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
1N5908
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation (Note 1)
@ T
L
≤ 25°C
P
PK
1500 W
Steady State Power Dissipation
@ T
L
≤ 75°C, Lead Length = 3/8″
Derated above T
L
= 75°C
P
D
5.0
50
W
mW/°C
Thermal Resistance, Junction−to−Lead
R
q
JL
20 °C/W
Forward Surge Current (Note 2)
@ T
A
= 25°C
I
FSM
200 A
Operating and Storage
Temperature Range
T
J
, T
stg
− 65 to +175 °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 4 and derated above T
A
= 25°C per Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
*Bidirectional device will not be available in this device
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless
otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 3) = 100 A)
Symbol Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
I
F
Forward Current
V
F
Forward Voltage @ I
F
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 3
)
= 53 A)
Device
(Note 4)
V
RWM
(Note 5)
I
R
@ V
RWM
Breakdown Voltage V
C
(Volts) (Note 7)
V
BR
(Note 6) (Volts)
@ I
T
@ I
PP
= 120 A @ I
PP
= 60 A @ I
PP
= 30 A
(Volts)
(mA)
Min Nom Max (mA)
1N5908 5.0 300 6.0 − − 1.0 8.5 8.0 7.6
3. Square waveform, PW = 8.3 ms, Non−repetitive duty cycle.
4. 1N5908 is JEDEC registered as a unidirectional device only (no bidirectional option)
5. A transient suppressor is normally selected according to the maximum working peak reverse voltage (V
RWM
), which should be equal to or
greater than the dc or continuous peak operating voltage level.
6. V
BR
measured at pulse test current I
T
at an ambient temperature of 25°C and minimum voltages in V
BR
are to be controlled.
7. Surge current waveform per Figure 4 and derate per Figure 2 of the General Data − 1500 W at the beginning of this group
1N5908
http://onsemi.com
3
Figure 1. Pulse Rating Curve
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ T
A
= 25 C°
T
A
, AMBIENT TEMPERATURE (°C)
Figure 2. Pulse Derating Curve
5
4
3
2
1
25 50 75 100 125 150 175 200
P
D
, STEADY STATE POWER DISSIPATION (WATTS)
T
L
, LEAD TEMPERATURE (°C)
3/8″
3/8″
Figure 3. Steady State Power Derating
0
0
100
50
0
01 2 34
t, TIME (ms)
VALUE (%)
t
r
≤ 10ms
t
P
PEAK VALUE − I
PP
HALF VALUE −
I
PP
2
Figure 4. Pulse Waveform
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO 50%
OF I
PP
.
1ms 10ms 100ms
1 ms 10 ms
100
10
1
t
P
, PULSE WIDTH
P
PK
, PEAK POWER (kW)
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 5
0.1ms
Figure 5. Typical Derating Factor for Duty Cycle
DERATING FACTOR
1 ms
10 ms
1
0.7
0.5
0.3
0.05
0.1
0.2
0.01
0.02
0.03
0.07
100 ms
0.1 0.2 0.5 2 5 10 501 20 100
D, DUTY CYCLE (%)
PULSE WIDTH
10 ms
12NEXT
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