FIGURE 1
DESIGN DATA
CASE: Hermetically sealed glass
case. DO-7 outline
LEAD MATERIAL: Copper clad steel
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (R
O
JEC
):
200 ˚C/W maximum
THERMAL IMPEDANCE: (Z
O
JX
): 70
˚C/W maximum
POLARITY: Cathode end is banded.
MOUNTING POSITION: Any.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071 FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com E-mail: mail@cdi-diodes.com
• AVAILABLE IN
JAN, JANTX,
AND
JANTXV
PER MIL-PRF-19500/118
• GENERAL PURPOSE SILICON DIODES
• METALLURGICALLY BONDED
1N483B
1N485B
1N486B
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 200 mA
Derating: 1.2 mA/°C From 25°C to 150°C
1.0 mA/°C From 150°C to 175°C
Forward Current: 650 mA
TYPE V
RM
V
RWM
I
O
I
O
I
FSM
T
A
= 150°C T
P
= 1/120 s
T
A
= 25°C
V (pk) V (pk) mA mA A
1N483B 80 70 200 50 2
1N485B 180 180 200 50 2
1N486B 250 225 200 50 2
TYPE V
F
I
R1 at
V
RWM
I
R2 at
V
RM
I
R3 at
V
RWM
@100mA T
A
= 25°C T
A
= 25°C T
A
= 150°C
V dc nA dc µA µA dc
1N483B 0.8 - 1.0 25 100 5
1N485B 0.8 - 1.0 25 100 5
1N486B 0.8 - 1.0 25 100 5
0.085/0.125
2.16/3.18
