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JANTX1N647

Part # JANTX1N647
Description STANDARD DIODE, 1A, 50V, DO-213AB, Diode Configuration:Sin
Category DIODE
Availability In Stock
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General Instrument
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General Instrument
Date Code: 8100
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

Voidless-Hermetically-Sealed Surface
Mount Unidirectional Transient
Suppressors
WWW.Microsemi .
SCOTTSDALE DIVISION
Microsemi
Scottsdale Division
Page 1
Copyright © 2007
10-03-2007 REV D
COM
1N6469US thru 1N6476US
1N6469US – 1N6476US
DESCRIPTION
APPEARANCE
This surface mount series of industry recognized voidless-hermetically-sealed
Unidirectional Transient Voltage Suppressor (TVS) designs is military qualified to MIL-
PRF-19500/552 and are ideal for high-reliability applications where a failure cannot be
tolerated. They provide a Working Peak “Standoff” Voltage selection from 5.0 to 51.6
Volts with 1500 W ratings. They are very robust in hard-glass construction and also
use an internal metallurgical bond identified as Category I for high reliability
applications. The 1500 W series is military qualified to MIL-PRF-19500/552. These
devices are also available in axial-leaded packages for thru-hole mounting by deleting
the “US” suffix (see separate data sheet for 1N6469 thru 1N6476A). Microsemi also
offers numerous other TVS products to meet higher and lower peak pulse power and
voltage ratings in both through-hole and surface-mount packages.
Package “G”
(or “D-5C”)
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
High surge current and peak pulse power provides
transient voltage protection for sensitive circuits
Triple-layer passivation
Internal Category I” metallurgical bonds
Voidless hermetically sealed glass package
JAN/TX/TXV military qualifications available per MIL-
PRF-19500/552 by adding JAN, JANTX, or JANTXV
prefix
Further options for screening in accordance with MIL-
PRF-19500 for JANS by using a “SP” prefix, e.g.
SP6469, SP6476, etc.
Axial-leaded equivalents are also available (see
separate data sheet for 1N6469 thru 1N6476)
Military and other high reliability transient protection
Extremely robust construction
Working Peak “Standoff” Voltage (V
WM
) from 5.0 to
51.6 V
Available as 1500 W Peak Pulse Power (P
PP
)
ESD and EFT protection per IEC61000-4-2 and
IEC61000-4-4 respectively
Secondary lightning protection per select levels in
IEC61000-4-5
Square-end-cap terminals for easy mounting
Nonsensitive to ESD per MIL-STD-750 Method
1020
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Operating & Storage Temperature: -55
o
C to +175
o
C
Peak Pulse Power at 25
o
C: 1500 Watts @ 10/1000 µs
(also see Figures 1,2 and 4)
Impulse repetition rate (duty factor): 0.01%
Forward Surge Current: 130 Amps@ 8.33 ms one-
half sine wave
Forward Voltage: 1.5 V @ 4 Amps dc and 4.8 V at
100 Amps (pulsed)
Steady-State Power: 3.0 W @ T
A
= 25
o
C (see note
below and Figure 4)
Thermal Resistance Junction to End Cap: 20.0
o
C/W
Solder Temperatures: 260
o
C for 10 s (maximum)
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: End caps are Copper with
Tin/Lead (Sn/Pb) finish. Note: Previous inventory
had solid Silver end caps with Tin/Lead (Sn/Pb)
finish.
MARKING: Body painted and part number, etc.
POLARITY: Cathode band
Tape & Reel option: Standard per EIA-481-B
Weight: 1100 mg
See package dimensions on last page
NOTE: Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from
mounting point to ambient is sufficiently controlled where T
J(MAX)
is not exceeded.
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Voidless-Hermetically-Sealed Surface
Mount Unidirectional Transient
Suppressors
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N6469US thru 1N6476US
1N6469US – 1N6476US
ELECTRICAL CHARACTERISTICS
TYPE
BREAK
DOWN
VOLTAGE
V(BR)
MIN.
BREAKDOWN
CURRENT
I
(BR)
WORKING
PEAK
VOLTAGE
V
WM
MAX
LEAKAGE
CURRENT
I
D
MAXIMUM
CLAMPING
VOLTAGE
V
C
@ 10/1000 µs
MAXIMUM
PEAK PULSE
CURRENT
I
PP
@8/20 µs @10/1000 µs
MAXIMUM
TEMP.
COEF. OF
V
(BR)
Volts mAdc Vdc
μAdc
V(pk) A(pk) A(pk) %/
o
C
1N6469US 5.6 50 5 1500 9.0 945 167 -.03, +0.04
1N6470US 6.5 50 6 1000 11.0 775 137 0.06
1N6471US 13.6 10 12 20 22.6 374 66 0.085
1N6472US 16.4 10 15 10 26.5 322 57 0.085
1N6473US 27.0 5 24 5 41.4 207 36.5 .096
1N6474US 33.0 1 30.5 5 47.5 181 32 .098
1N6475US 43.7 1 40.3 5 63.5 135 24 .101
1N6476US 54.0 1 51.6 5 78.5 107 19 .103
SYMBOLS & DEFINITIONS
Symbol Definition
V
BR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
V
WM
Working Peak Voltage: The maximum peak voltage that can be applied over the operating temperature range.
This is also referred to as Standoff Voltage.
I
D
Maximum Standoff Current: The maximum current that will flow at the specified voltage and temperature.
V
C
Maximum clamping voltage at specified I
PP
(Peak Pulse Current) at the specified pulse conditions.
P
PP
Peak Pulse Power: The peak power dissipation resulting from the peak impulse current I
PP
.
GRAPHS
Pulse current (I
P
) in percent of I
PP
Peak Value
I
PP
Pulse time duration (tp) is
defined as that point where
I
P
decays to 50% of peak
value (I
PP
).
time (t) in milliseconds
FIG. 1 Non-repetive peak pulse power rating curve FIG. 2 Pulse wave form for exponential surge
NOTE: Peak power defined as peak voltage times peak current for 10/1000 µs
Microsemi
Scottsdale Division
Page 2
Copyright © 2007
10-03-2007 REV D
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Voidless-Hermetically-Sealed Surface
Mount Unidirectional Transient
Suppressors
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N6469US thru 1N6476US
1N6469US – 1N6476US
FIGURE 3 T – Temperature –
o
C
Peak Pulse Power (Ppp), Current (Ipp),
and DC Power in Percent of 25
o
C Ratin
g
8/20 µs CURRENT IMPULSE WAVEFORM
FIGURE 4
DERATING CURVE
PACKAGE DIMENSIONS Inches [mm]
G-MELF-PKG (D-5C)
shown in the pad layout.
Note: If mounting requires adhesive separate from the solder,
an additional 0.090 inch diameter contact may be placed in the
center between the pads as an optional spot for cement as
Copyright © 2007
10-03-2007 REV D