DMN3404L

Document number: DS31787 Rev. 2 - 2

1 of 6

www.diodes.com

June 2009

DMN3404L

NEW PRODUCT

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT-23

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Terminals Connections: See Diagram Below

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.008 grams (approximate)

Maximum Ratings @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Units

Drain-Source Voltage

V

DSS

30 V

Gate-Source Voltage

V

GSS

±20 V

Continuous Drain Current (Note 3)

Steady

State

T

A

= 25°C

T

A

= 70°C

I

D

5.8

4.9

A

Pulsed Drain Current

I

DM

30 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 3)

P

D

1.4 W

Thermal Resistance, Junction to Ambient @T

A

= 25°C R

θJA

90 °C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150 °C

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on 1 in

2

FR-4 PCB with 2oz. Copper. The value in any given application depends on the user’s specific board design.

TOP VIEW

Internal Schematic

TOP VIEW

D

G

S

Source

Gate

Drain

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DMN3404L

Document number: DS31787 Rev. 2 - 2

2 of 6

www.diodes.com

June 2009

DMN3404L

NEW PRODUCT

Electrical Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 4)

Drain-Source Breakdown Voltage

BV

DSS

30 - - V

V

GS

= 0V, I

D

= 250μA

Zero Gate Voltage Drain Current TJ = 25°C

I

DSS

- - 1.0

μA

V

DS

= 30V, V

GS

= 0V

Gate-Source Leakage

I

GSS

- - ±100 nA

V

GS

= ±20V, V

DS

= 0V

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

V

GS

(

th

)

1.0 1.5 2.0 V

V

DS

= V

GS

, I

D

= 250μA

Static Drain-Source On-Resistance

R

DS (ON)

-

24

33

28

42

mΩ

V

GS

= 10V, I

D

= 5.8A

V

GS

= 4.5V, I

D

= 4.8A

Forward Transfer Admittance

|Y

fs

|

- 10 - S

V

DS

= 5V, I

D

= 5.8A

Diode Forward Voltage

V

SD

- 0.75 1.0 V

V

GS

= 0V, I

S

= 1A

DYNAMIC CHARACTERISTICS

Input Capacitance

C

iss

- 386 -

pF

V

DS

= 15V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

- 44 -

pF

Reverse Transfer Capacitance

C

rss

- 39 -

pF

Gate Resistance

R

g

- 1.51 -

Ω

V

DS

= 0V, V

GS

= 0V, f = 1MHz

Total Gate Charge

Q

g

- 9.2 -

nC

V

GS

= 10V, V

DS

= 15V, I

D

= 5.8A

Gate-Source Charge

Q

g

s

- 1.2 -

nC

Gate-Drain Charge

Q

g

d

- 1.8 -

nC

Turn-On Delay Time

t

D

(

on

)

-

3.41

- ns

V

DD

= 15V, V

GS

= 10V,

R

L

= 2.6Ω, R

G

= 3Ω

Turn-On Rise Time

t

r

-

6.18

- ns

Turn-Off Delay Time

t

D

(

off

)

-

13.92

- ns

Turn-Off Fall Time

t

f

-

2.84

- ns

Notes: 4. Short duration pulse test used to minimize self-heating effect.

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

Fig. 1 Typical Output Characteristic

V , DRAIN-SOURCE VOLTAGE (V)

DS

0

4

8

12

20

I, D

R

AI

N

C

U

R

E

N

T

(A)

D

16

V = 2.0V

GS

V = 3.0V

GS

V = 4.5V

GS

V = 8V

GS

V = 2.5V

GS

1.5 2 2.5 3 3.5 4

Fig. 2 Typical Transfer Characteristic

V , GATE-SOURCE VOLTAGE (V)

GS

0

4

8

12

16

20

I, D

R

AIN

C

U

R

EN

T

(A)

D

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V = 5V

DS

DMN3404L

Document number: DS31787 Rev. 2 - 2

3 of 6

www.diodes.com

June 2009

DMN3404L

NEW PRODUCT

0

0.05

0.1

0.15

0.2

0.25

0.3

0.1 1 10 100

R

, D

R

AIN-S

O

U

R

C

E

O

N-

R

ESIS

T

AN

C

E ( )

DS(ON)

Ω

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

I , DRAIN-SOURCE CURRENT (A)

D

V = 8.0V

GS

V = 4.5V

GS

V = 2.5V

GS

0

0.02

0.04

0.06

0.08

048121620

I , DRAIN CURRENT (A)

D

Fig. 4 Typical On-Resistance

vs. Drain Current and Temperature

R

, D

R

AIN-S

O

U

R

C

E

O

N-

R

ESIS

T

AN

C

E ( )

DS(ON)

Ω

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V = 4.5V

GS

0.6

0.8

1.0

1.2

1.4

1.6

1.8

R

, D

R

AIN-S

O

U

R

C

E

ON-RESISTANCE (NORMALIZED)

DSON

Fig. 5 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

A

V = 4.5V

I = 5.0A

GS

D

V = 10V

I = 10A

GS

D

0

0.01

0.02

0.03

0.04

0.05

0.06

0.07

R

, D

R

AIN-S

O

U

R

C

E

ON-RESISTANCE ( )

DSON

Ω

Fig. 6 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

A

V = 10V

I = 10A

GS

D

V = 4.5V

I = 5.0A

GS

D

0.8

1.2

1.6

2

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

A

V , GATE THRESHOLD VOLTAGE (V)

GS(TH)

I = 1mA

D

I = 250µA

D

0

2

4

6

8

10

12

14

16

18

20

0.5 0.6 0.7 0.8 0.9 1 1.1 1.2

Fig. 8 Diode Forward Voltage vs. Current

V , SOURCE-DRAIN VOLTAGE (V)

SD

I, S

O

U

R

C

E

C

U

R

EN

T

(A)

S

T = 25°C

A

Part #	DMN3404L-7
Description	MOSFET BVDSS: 25V-30V SOT23 T&R 3K - Tape and Reel
Category	DIODE
Availability	Out of Stock
Qty	0

DMN3404L-7

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