International Rectifier 120LQ100

Cross Number:

Item Description: SCHOTTKY 100V 120A 3SMD-1 - Bulk

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International Rectifier 0638
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

SCHOTTKY RECTIFIER
120 A, 100V
120LQ100
Major Ratings and Characteristics Description/Features
03/15/02
CASE STYLE
Case Outline and Dimensions - SMD-1
www.irf.com 1
Characteristics 120LQ100 Units
I
F(AV)
120 A
V
RRM
100 V
I
FSM
@ tp = 8.3ms half-sine 1000 A
V
F
@ 120Apk, T
J
=125°C 0.74 V
T
J
,T
stg
Operating and storage -55 to 150 °C
CATHODE ANODE ANODE
HIGH EFFICIENCY SERIES
The 120LQ100 Schottky rectifier has been expressly
designed to meet the rigorous requirements of hi-rel
environments. It is packaged in the hermetic surface mount
SMD-1 ceramic package. The device's forward voltage drop
and reverse leakage current are optimized for the lowest
power loss and the highest circuit efficiency for typical high
frequency switching power supplies and resonent power
converters. Full MIL-PRF-19500 quality conformance
testing is available on source control drawings to TX, TXV
and S quality levels.
Hermetically Sealed
Low Forward Voltage Drop
High Frequency Operation
Guard Ring for Enhanced Ruggedness and Long term
Reliability
Surface Mount
Lightweight
PD - 94396
120LQ100
2 www.irf.com
Part number 120LQ100
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
Voltage Ratings
100
Parameters
Limits Units Conditions
I
F(AV)
Max. Average Forward Current 120 A 50% duty cycle @ T
C
= 58°C, square waveform
See Fig. 5
I
FSM
Max. Peak One Cycle Non - Repetitive 1000 A @ t
p
= 8.3 ms half-sine
Surge Current
Absolute Maximum Ratings
Parameters Limits Units Conditions
V
FM
Max. Forward Voltage Drop 0.64 V @ 30A
See Fig. 1Q 0.74 V @ 60A T
J
= -55°C R
0.92 V @ 120A
0.62 V @ 30A
0.75 V @ 60A T
J
= 25°CR
0.94 V @ 120A
0.53 V @ 30A
0.62 V @ 60A T
J
= 125°C R
0.74 V @ 120A
I
RM
Max. Reverse Leakage Current 60 µA T
J
= 25°C
See Fig. 2Q 15 mA T
J
= 100°CV
R
= rated V
R
R
60 mA T
J
= 125°C
C
T
Max. Junction Capacitance 2616 pF V
R
= 5V
DC
( 1MHz, 25°C ) R
L
S
Typical Series Inductance 5.9 nH Measured from center of cathode pad to center of
anode pad
Electrical Specifications
Parameters Limits Units Conditions
T
J
Max.Junction Temperature Range -55 to 150 °C
T
stg
Max. Storage Temperature Range -55 to 150 °C
R
thJC
Max. Thermal Resistance, Junction 0.8 °C/W DC operation See Fig. 4
to Case
wt Weight (Typical) 2.6 g
Die Size 275X275 mils
Case Style SMD-1
Thermal-Mechanical Specifications
Q Pulse Width < 300µs, Duty Cycle < 2%
R Pins 2 and 3 externally tied together
120LQ100
www.irf.com 3
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage
Fig. 1 - Max. Forward Voltage Drop Characteristics
0 20 40 60 80 100
Reverse Voltage - V
R
(V)
0.001
0.01
0.1
1
10
100
Reverse Current - I
R
( mA )
125°C
75°C
25°C
100°C
0 20 40 60 80 100
Reverse Voltage -V
R
(V)
100
1000
10000
Junction Capacitance - C
T
(pF)
T
J
= 25°C
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Forward Voltage Drop - V
F
(V)
1
10
100
1000
Instantaneous Forward Current - I
F
(A)
Tj = -55°C
Tj = 125°C
Tj = 25°C
12NEXT

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