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BAV100-GS08

Part # BAV100-GS08
Description SWITCHING DIODE GENPURP MINIMELF-E2 - Tape and Reel
Category DIODE
Availability In Stock
Qty 300
Qty Price
1 + $0.01565
Manufacturer Available Qty
Vishay
Date Code: 2005
  • Shipping Freelance Stock: 300
    Ships Immediately

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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

BAV100/101/102/103
Document Number 85542
Rev. 1.6, 13-Feb-07
Vishay Semiconductors
www.vishay.com
1
94 9371
Small Signal Switching Diodes, High Voltage
Features
• Silicon Epitaxial Planar Diodes
• Lead (Pb)-free component
• Component in accordance to
RoHS 2002/95/EC and WEEE 2002/96/EC
Applications
• General purposes
Mechanical Data
Case: MiniMELF Glass case (SOD80)
Weight: approx. 31 mg
Cathode Band Color: Black
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Part Type differentiation Ordering code Type Marking Remarks
BAV100
V
RRM
= 60 V
BAV100-GS18 or BAV100-GS08 - Tape and Reel
BAV101
V
RRM
= 120 V
BAV101-GS18 or BAV101-GS08 - Tape and Reel
BAV102
V
RRM
= 200 V
BAV102-GS18 or BAV102-GS08 - Tape and Reel
BAV103
V
RRM
= 250 V
BAV103-GS18 or BAV103-GS08 - Tape and Reel
Parameter Test condition Part Symbol Value Unit
Repetitive peak reverse voltage BAV100
V
RRM
60 V
BAV101
V
RRM
120 V
BAV102
V
RRM
200 V
BAV103
V
RRM
250 V
Reverse voltage BAV100
V
R
50 V
BAV101
V
R
100 V
BAV102
V
R
150 V
BAV103
V
R
200 V
Peak forward surge current
t
p
= 1 s I
FSM
1A
Repetitive peak forward current
I
FRM
625 mA
Forward continuous current
I
F
250 mA
Power dissipation
P
tot
500 mW
e2
www.vishay.com
2
Document Number 85542
Rev. 1.6, 13-Feb-07
BAV100/101/102/103
Vishay Semiconductors
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Junction lead
R
thJL
350 K/W
Thermal resistance junction to ambient air on PC board
50 mm x 50 mm x 1.6 mm
R
thJA
500 K/W
Junction temperature
T
j
175 °C
Storage temperature range
T
stg
- 65 to + 175 °C
Parameter Test condition Part Symbol Min Typ. Max Unit
Forward voltage
I
F
= 100 mA V
F
1000 mV
Reverse current
V
R
= 50 V
BAV100
I
R
100 nA
V
R
= 100 V
BAV101
I
R
100 nA
V
R
= 150 V
BAV102
I
R
100 nA
V
R
= 200 V
BAV103
I
R
100 nA
T
j
= 100 °C, V
R
= 50 V
BAV100
I
R
15 µA
T
j
= 100 °C, V
R
= 100 V
BAV101
I
R
15 µA
T
j
= 100 °C, V
R
= 150 V
BAV102
I
R
15 µA
T
j
= 100 °C, V
R
= 200 V
BAV103
I
R
15 µA
Breakdown voltage I
R
= 100 µA, t
p
/T = 0.01,
t
p
= 0.3 ms
BAV100 V
(BR)
60 V
I
R
=100 µA, t
p
/T = 0.01,
t
p
= 0.3 ms
BAV101 V
(BR)
120 V
I
R
= 100 µA, t
p
/T = 0.01,
t
p
= 0.3 ms
BAV102 V
(BR)
200 V
BAV103 V
(BR)
250 V
Diode capacitance
V
R
= 0, f = 1 MHz C
D
1.5 pF
Differential forward resistance
I
F
= 10 mA r
f
5 Ω
Reverse recovery time I
F
= I
R
= 30 mA, i
R
= 3 mA,
R
L
= 100 Ω
t
rr
50 ns
Figure 1. Reverse Current vs. Junction Temperature
04080 120 160
0.01
0.1
1
10
1000
I-Reverse Current (µA)
R
T
j
-Junction Temperature (°C)
200
94 9084
100
Scattering Limit
V
R
= V
RRM
Figure 2. Forward Current vs. Forward Voltage
0 0.4 0.8 1.2 1.6
0.1
1
10
100
1000
I - Forward Current (mA)
F
V
F
- Forward Voltage (V)
2.0
94 9085
Scattering Limit
T
j
= 25 °C
BAV100/101/102/103
Document Number 85542
Rev. 1.6, 13-Feb-07
Vishay Semiconductors
www.vishay.com
3
Package Dimensions in millimeters (inches): SOD80
Figure 3. Differential Forward Resistance vs. Forward Current
0.1 1 10
1
10
100
1000
r - Differential Forward Resistance ( )
f
I
F
- Forward Current (mA)
100
94 9089
Ω
T
j
= 25 °C
96 12070
12NEXT
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