Vishay 10BQ040TRPBF

Cross Number:

Item Description: DIODE SCHOTTKY 40V 1A SMB

Qty Price
1 + $0.07000






Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

SCHOTTKY RECTIFIER
1 Amp
10BQ040PbF
Bulletin PD-20784 07/04
1
www.irf.com
Major Ratings and Characteristics
I
F(AV)
Rectangular waveform 1.0 A
V
RRM
40 V
I
FSM
@ tp = 5 µs sine 430 A
V
F
@
1.0 Apk, T
J
=125°C 0.49 V
T
J
range - 55 to 150 °C
Characteristics Value Units
The 10BQ040PbF surface-mount Schottky rectifier has been
designed for applications requiring low forward drop and very
small foot prints on PC boards. Typical applications are in disk
drives, switching power supplies, converters, free-wheeling
diodes, battery charging, and reverse battery protection.
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Lead-Free ("PbF" suffix)
Description/ Features
Case Styles
10BQ040PbF
SMB
I
F(AV)
= 1.0Amp
V
R
= 40V
10BQ040PbF
Bulletin PD-20784 07/04
2 www.irf.com
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
40
Voltage Ratings
V
FM
Max. Forward Voltage Drop (1) 0.53 V @ 1A
* See Fig. 1 0.70 V @ 2A
0.49 V @ 1A
0.64 V @ 2A
I
RM
Max. Reverse Leakage Current (1) 0.1 mA T
J
= 25 °C
* See Fig. 2 4 mA T
J
= 125 °C
C
T
Typical Junction Capacitance 80 pF V
R
= 5V
DC
, (test signal range 100kHz to 1MHz) 25°C
L
S
Typical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Volatge Rate of Charge 10000 V/ µs
(Rated V
R
)
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
R
Electrical Specifications
Parameters 10BQ Units Conditions
(1) Pulse Width < 300µs, Duty Cycle < 2%
I
F(AV)
Max. Average Forward Current 1.0 A 50% duty cycle @ T
L
= 112 °C, rectangular wave form
I
FSM
Max. Peak One Cycle Non-Repetitive 430 A 5µs Sine or 3µs Rect. pulse
Surge Current 45 10ms Sine or 6ms Rect. pulse
E
AS
Non- Repetitive Avalanche Energy 3.0 mJ T
J
= 25 °C, I
AS
= 1A, L = 6mH
I
AR
Repetitive Avalanche Current 1.0 A Current decaying linearly to zero in 1 µsec
Frequency limited by T
J
max. Va = 1.5 x Vr typical
Parameters 10BQ Units Conditions
Absolute Maximum Ratings
Following any rated
load condition and
with rated V
RRM
applied
Part number 10BQ040PbF
T
J
Max. Junction Temperature Range (*) - 55 to 150 °C
T
stg
Max. Storage Temperature Range - 55 to 150 °C
R
thJL
Max. Thermal Resistance Junction 36 °C/W DC operation
to Lead (**)
R
thJA
Max. Thermal Resistance Junction 80 °C/W
to Ambient
wt Approximate Weight 0.10 (0.003) g (oz.)
Case Style SMB Similar DO-214AA
Device Marking IR1F
Thermal-Mechanical Specifications
Parameters 10BQ Units Conditions
< thermal runaway condition for a diode on its own heatsink
(**) Mounted 1 inch square PCB
(*) dPtot 1
dTj Rth( j-a)
10BQ040PbF
Bulletin PD-20784 07/04
3www.irf.com
Fig. 2 - Typical Peak Reverse Current
Vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Instantaneous Forward Current - I
F
(A)
Forward Voltage Drop - V
FM
(V)
Reverse Current - I
R
(mA)
Reverse Voltage - V
R
(V)
Reverse Voltage - V
R
(V)
Junction Capacitance - C
T
(p F)
Thermal Impedance Z
thJC
(°C/W)
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics (Per Leg)
0.1
1
10
0.2 0.4 0.6 0.8 1
Tj = 150˚C
Tj = 125˚C
Tj = 25˚C
0.0001
0.001
0.01
0.1
1
10
0 5 10 15 20 25 30 35 40
75˚C
25˚C
125˚C
100˚C
50˚C
Tj = 150˚C
10
100
1000
0 10203040
T = 25˚C
J
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Single Pulse
(Thermal Resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
2
t
1
t
P
DM
Notes:
1. Duty factor D = t1/ t2 .
2. Peak Tj = Pdm x ZthJC + Tc .
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