International Rectifier 10MQ060NTR

Cross Number:

Item Description: Diode Schottky 60V 1.5A 2-PinSMA T/R - TR

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International Rectifier 0617
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

SCHOTTKY RECTIFIER
2.1 Amp
10MQ060N
1
Major Ratings and Characteristics
I
F
DC 2.1 A
V
RRM
60 V
I
FSM
@ tp = 5 µs sine 40 A
V
F
@
1.5Apk, T
J
=125°C 0.63 V
T
J
range - 55 to 150 °C
Characteristics Value Units
The 10MQ060N surface mount Schottky rectifier has been
designed for applications requiring low forward drop and very
small foot prints on PC boards. Typical applications are in disk
drives, switching power supplies, converters, free-wheeling
diodes, battery charging, and reverse battery protection.
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Description/ Features
www.irf.com
Case Styles
10MQ060N
SMA
I
F(AV)
= 2.1Amp
V
R
= 60V
Bulletin PD-20519 rev. L 07/04
10MQ060N
Bulletin PD-20519 rev. L 07/04
2
www.irf.com
Part number 10MQ060N
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
60
Voltage Ratings
V
FM
Max. Forward Voltage Drop (1) 0.63 V @ 1A
* See Fig. 1 0.71 V @ 1.5A
0.57 V @ 1A
0.63 V @ 1.5A
I
RM
Max. Reverse Leakage Current (1) 0.5 mA T
J
= 25 °C
* See Fig. 2 7.5 mA T
J
= 125 °C
V
F(TO)
Threshold Voltage 0.45 V T
J
= T
J
max.
r
t
Forward Slope Resistance 86.8 m
C
T
Typical Junction Capacitance 31 pF V
R
= 10V
DC
, T
J
= 25°C, test signal = 1Mhz
L
S
Typical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/µs (Rated V
R
)
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
R
Electrical Specifications
Parameters 10MQ Units Conditions
(1) Pulse Width < 300µs, Duty Cycle < 2%
T
J
Max. Junction Temperature Range (*) -55 to 150 °C
T
stg
Max. Storage Temperature Range - 55 to 150 °C
R
thJA
Max. Thermal Resistance Junction 80 °C/W DC operation
to Ambient
wt Approximate Weight 0.07(0.002) g (oz.)
Case Style SMA Similar D-64
Device Marking IR1H
Thermal-Mechanical Specifications
Parameters 10MQ Units Conditions
Absolute Maximum Ratings
I
F(AV)
Max. Average Forward Current 1.5 A 50% duty cycle @ T
L
= 120 °C, rectangular wave form.
* See Fig. 4 On PC board 9mm
2
island(.013mm thick copper pad area)
I
FSM
Max. Peak One Cycle Non-Repetitive 40 5µs Sine or 3µs Rect. pulse
Surge Current * See Fig. 6 10 10ms Sine or 6ms Rect. pulse
E
AS
Non-Repetitive Avalanche Energy 2.0 mJ T
J
= 25 °C, I
AS
= 1A, L = 4mH
I
AR
Repetitive Avalanche Current 1.0 A
Parameters 10MQ Units Conditions
A
Following any rated
load condition and
with rated V
RRM
applied
< thermal runaway condition for a diode on its own heatsink
(*) dPtot 1
dTj Rth( j-a)
10MQ060N
Bulletin PD-20519 rev. L 07/04
3www.irf.com
Fig. 2 - Typical Peak Reverse Current
Vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop Characteristics
0.1
1
10
0.20.40.60.8 1 1.21.41.6
Instantaneous Forward Current - I (A)
T = 1 5 0 ° C
T = 1 2 5 ° C
T = 2 5° C
J
J
J
F
FM
Forward Voltage Drop - V (V)
0.0001
0.001
0.01
0.1
1
10
100
0 102030405060
R
R
125°C
100°C
75°C
50°C
25°C
Reverse Current - I (mA)
T = 150°C
J
Reverse Voltage - V (V)
10
100
0 102030405060
T = 25°C
J
R
T
Junction Capacitance - C (pF)
Reverse Voltage - V (V)
12NEXT

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