SIKORSKY AIRCRAFT 102

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Item Description: Switch Push Button N.C. SPSTRound Button 0.25A 30VA Quick

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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

1/9February, 25 2002
STB7102
0.5/2.5 GHz UHF LO BUFFER AMPLIFIER
SOT323-6L (SC70)
ORDER CODE
STB7102TR
BRANDING
102
3
2
1
4
5
6
(Bottom View)
4
5
6
3
2
1
(Top View)
PIN CONNECTION
Pin No. Pin Name
1 INPUT
2GND
3GND
4 OUTPUT
5GND
6VCC
102
OPERATING FREQUENCY 500-2500MHz
LOW CURRENT CONSUMPTION
EXCELLENT ISOLATION
ULTRA MINIATURE SOT323-6L PACKAGE
APPLICATIONS
BUFFER AMPLIFIER FOR 0.5/2.5 GHz
APPLICATIONS
CDMA/PCS LO BUFFER AMPLIFIER
DESCRIPTION
The STB7102, designed for RF Mobile Phone
applications (0.5/2.5GHz), is an high isolation
Local Oscillator Buffer Amplifier. Manufactured in
the third generation of ST proprietary bipolar
process, it offers an excellent isolation and a good
linearity using only 4mA current consumption. The
STB7102 is housed in an ultra miniature package
SOT323-6L surface mount package.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Conditions Value Unit
V
cc
Supply voltage 3.3 V
T
stg
Storage temperature -40 to +100
o
C
T
a
Operating ambient temperature -30 to +85
o
C
STB7102
2/9
ELECTRICAL CHARACTERISTICS (
CELL BAND
)
(T
a
= +25
o
C, V
cc
= 2.7V, Z
s
= Z
L
= 50, tested in circuit shown in fig.1, unless otherwise specified)
Symbol Parameters Test Conditions Min Typ Max Unit
Freq. Frequency Range 990 1030 MHz
Vcc Supply Voltage 2.6 2.7 2.8 V
Icc Current Consumption 3.3 4.3 5.3 mA
P1dB Output Power at 1dB Compression Point F = 1010 MHz -2 dBm
Gp Power Gain F = 1010 MHz 16.7 dB
NF Noise Figure F = 1010 MHz 2.7 dB
Isol. Reverse Isolation F = 1010 MHz 45 dB
RLin Input Return Loss F = 1010 MHz 30 dB
RLout Output Return Loss F = 1010 MHz 17.8 dB
GND
3
GND
2
INPUT
1
VC C
6
GN D
5
OUT
4
ULOBA
U1
C5
10nF
C3
33pF
C8
1.5pF
L1
33nH
C2
1uF
1
2
JP1
VC C
C1
33pF
L2
2n2
J1
RF IN
L3
10nH
J2
RF OUT
L4
5n6
Figure 1 Cell Band Application Circuit Configuration
3/9
STB7102
TYPICAL PERFORMANCE (CELL BAND)
Power Gain vs. Frequency and Voltage
0
2
4
6
8
10
12
14
16
18
20
800 900 1000 1100 1200
Frequency (MHz)
Power Gain (dB)
Vcc = 2.8 V
Vcc = 2.7 V
Vcc = 2.6 V
Ta = 25 °C
Power Gain vs. Frequency and Temperature
0
2
4
6
8
10
12
14
16
18
20
800 900 1000 1100 1200
Frequency (MHz)
Power Gain (dB)
Ta = 25 °C
Ta = -30 °C
Ta = 85 °C
Vcc = 2.7 V
Reverse Isolation vs. Frequency and Voltage
-60
-50
-40
-30
-20
-10
0
800 900 1000 1100 1200
Frequency (MHz)
Reverse Isolation (dB)
Vcc = 2.8 V
Vcc = 2.7 V
Vcc = 2.6 V
Ta = 25 °C
Input Return Loss vs. Frequency and Voltage
-35
-30
-25
-20
-15
-10
-5
0
800 900 1000 1100 1200
Frequency (MHz)
Input Return Loss (dB)
Vcc = 2.8 V
Vcc = 2.7 V
Vcc = 2.6 V
Ta = 25 °C
Reverse Isolation vs. Frequency and Temperature
-60
-50
-40
-30
-20
-10
0
800 900 1000 1100 1200
Frequency (MHz)
Reverse Isolation (dB)
Ta = 25 °C
Ta = -30 °C
Ta = 85 °C
Vcc = 2.7 V
Input Return Loss vs. Frequency and Temperature
-35
-30
-25
-20
-15
-10
-5
0
800 900 1000 1100 1200
Frequency (MHz)
Input Return Loss (dB)
Ta = 25 °CTa = -30 °C
Ta = 85 °C
Vcc = 2.7 V
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