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PMBD914

Part # PMBD914
Description SWITCHING DIODE, 100V 215mA,SOT-23, Diode Configuration:-
Additional Information:


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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

DATA SHEET
Product specification
Supersedes data of 1996 Sep 18
1999 May 11
DISCRETE SEMICONDUCTORS
PMBD914
High-speed diode
b
ook, halfpage
M3D088
1999 May 11 2
Philips Semiconductors Product specification
High-speed diode PMBD914
FEATURES
Small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 70 V
Repetitive peak reverse voltage:
max. 85 V
Repetitive peak forward current:
max. 500 mA
Reverse recovery time: max. 4 ns.
APPLICATIONS
High-speed switching in thick and
thin-film circuits.
DESCRIPTION
The PMBD914 is a high-speed
switching diode fabricated in planar
technology, and encapsulated in the
small SOT23 plastic SMD package.
PINNING
PIN DESCRIPTION
1 anode
2 not connected
3 cathode
Fig.1 Simplified outline (SOT23) and symbol.
Marking code: p5D = made in Hong Kong; t5D = made in Malaysia.
handbook, halfpage
21
3
MAM185
2
n.c.
1
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage 85 V
V
R
continuous reverse voltage 70 V
I
F
continuous forward current note 1; see Fig.2 215 mA
I
FRM
repetitive peak forward current 500 mA
I
FSM
non-repetitive peak forward
current
square wave; T
j
=25°C prior to
surge; see Fig.4
t=1µs 4A
t=1ms 1A
t=1s 0.5 A
P
tot
total power dissipation T
amb
=25°C; note 1 250 mW
T
stg
storage temperature 65 +150 °C
T
j
junction temperature 150 °C
1999 May 11 3
Philips Semiconductors Product specification
High-speed diode PMBD914
ELECTRICAL CHARACTERISTICS
T
j
=25°C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
forward voltage see Fig.3
I
F
= 1 mA 715 mV
I
F
= 10 mA 855 mV
I
F
=50mA 1 V
I
F
= 150 mA 1.25 V
I
R
reverse current see Fig.5
V
R
=25V 25 nA
V
R
=75V 1 µA
V
R
=25V; T
j
= 150 °C30 µA
V
R
=75V; T
j
= 150 °C50 µA
C
d
diode capacitance f = 1 MHz; V
R
= 0; see Fig.6 1.5 pF
t
rr
reverse recovery time when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100 ;
measured at I
R
= 1 mA; see Fig.7
4ns
V
fr
forward recovery voltage when switched from I
F
= 10 mA;
t
r
= 20 ns; see Fig.8
1.75 V
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
thermal resistance from junction to tie-point 330 K/W
R
th j-a
thermal resistance from junction to ambient note 1 500 K/W
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