1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol MPSA42 MPSA43 Unit
Collector–Emitter Voltage V
CEO
300 200 Vdc
Collector–Base Voltage V
CBO
300 200 Vdc
Emitter–Base Voltage V
EBO
6.0 6.0 Vdc
Collector Current — Continuous I
C
500 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
R
JA
200 °C/mW
Thermal Resistance, Junction to Case
R
JC
83.3 °C/mW
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(1)
(I
C
= 1.0 mAdc, I
B
= 0) MPSA42
MPSA43
V
(BR)CEO
300
200
—
—
Vdc
Collector–Base Breakdown Voltage
(I
C
= 100 Adc, I
E
= 0) MPSA42
MPSA43
V
(BR)CBO
300
200
—
—
Vdc
Emitter–Base Breakdown Voltage
(I
E
= 100 Adc, I
C
= 0)
V
(BR)EBO
6.0 — Vdc
Collector Cutoff Current
(V
CB
= 200 Vdc, I
E
= 0) MPSA42
(V
CB
= 160 Vdc, I
E
= 0) MPSA43
I
CBO
—
—
0.1
0.1
µAdc
Emitter Cutoff Current
(V
EB
= 6.0 Vdc, I
C
= 0) MPSA42
(V
EB
= 4.0 Vdc, I
C
= 0) MPSA43
I
EBO
—
—
0.1
0.1
µAdc
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
