AVX 06032U1R5BAT2A

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Item Description: CAP 1.5PF 200VDC C0G 0.1PF SMD 0603 - Tape and Reel

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AVX 0926
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

TQP7M9101
¼W High Linearity Amplifier
Applications
Repeaters
Mobile Infrastructure
CDMA / WCDMA / LTE
General Purpose Wireless
3-pin SOT-89 Package
Product Features
Functional Block Diagram
400-4000 MHz
+25 dBm P1dB
+39.5 dBm Output IP3
17.5 dB Gain @ 2140 MHz
+5V Single Supply, 87 mA Current
No output matching required
Internal RF overdrive protection
Internal DC overvoltage protection
On chip ESD protection
SOT-89 Package
RF IN GND RF OUT
GND
1
2 3
4
General Description
Pin Configuration
The TQP7M9101 is a high-linearity driver amplifier in a
standard SOT-89 surface mount package. This
InGaP/GaAs HBT delivers high performance across a
b
road range of frequencies with +40 dBm OIP3 and +25
dBm P1dB while only consuming 87 mA quiescen
t
current. All devices are 100% RF and DC tested.
The TQP7M9101 incorporates on-chip features tha
t
differentiate it from other products in the market. The RF
output is internally matched in to 50 ohms. Only input
matching is required for optimal performance in specific
frequency bands making the component easy for design
engineers to implement in their systems. The amplifie
r
integrates an on-chip DC over-voltage and RF over-drive
p
rotection. This protects the amplifier from electrical DC
voltage surges and high input RF input power levels tha
t
may occur in a system. On-chip ESD protection allows
the amplifier to have a very robust Class 2 HBM ESD
rating.
The TQP7M9101 is targeted for use as a driver amplifie
r
in wireless infrastructure where high linearity, mediu
m
p
ower, and high efficiency are required. The device an
excellent candidate for transceiver line cards in curren
t
and next generation multi-carrier 3G / 4G base stations.
Ordering Information
Part No. Description
TQP7M9101 0.25 W High Linearity Amplifier
TQP7M9101-PCB900 TQP7M9101 869-960 MHz EVB
TQP7M9101-PCB2140 TQP7M9101 2.11-2.17 GHz EVB
Standard T/R size = 1000 pieces on a 7” reel.
Pin # Symbol
1 RF Input
3 RF Output / Vcc
2, 4 Ground
Advanced Data Sheet: Rev D 09/19/11
- 1 of 1 -
Disclaimer: Subject to change without notice
© 2011 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network
®
TQP7M9101
¼W High Linearity Amplifier
Advanced Data Sheet: Rev D 09/19/11
- 2 of 2 -
Disclaimer: Subject to change without notice
© 2011 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network
®
Specifications
Absolute Maximum Ratings
Parameter Rating
Storage Temperature -65 to +150
°
C
Device Voltage,V
cc
+8 V
Maximum Input Power +23 dBm
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Recommended Operating Conditions
Parameter Min Typ Max Units
V
cc
+3 +5 +5.25 V
T
case
-40 85
°
C
Tj (for>10
6
hours MTTF) 160
°
C
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: +25°C, +5V Vsupply, in a tuned application circuit
Parameter Conditions Min Typical Max Units
Operational Frequency Range 400 4000 MHz
Test Frequency 2140 MHz
Gain 17.5 dB
Input Return Loss 15 dB
Output Return Loss 13.5 dB
Output P1dB +25 dBm
Output IP3 See Note 1. +39.5 dBm
WCDMA Pout @ -55 dBc ACLR
+14.5 dBm
Noise Figure
3.9 dB
Vcc
5 V
Quiescent Current, Icq
87 mA
Thermal Resistance (jnc to case) θ
jc
71
°
C/W
Notes
1. OIP3 measured with two tones at an output power of +8 dBm / tone separated by 1 MHz. The suppression on the largest IM3 product is
used to calculate the OIP3 using 2:1 rule.
TQP7M9101
¼W High Linearity Amplifier
Device Characterization Data
10
0
10
20
30
40
0123
Advanced Data Sheet: Rev D 09/19/11
- 3 of 3 -
Disclaimer: Subject to change without notice
© 2011 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network
®
4
Gain (dB)
Frequency (GHz)
Gain vs Frequency
Maximum Stable Gain (GMAX)
Insertion Gain (S21)
-1
-0.8
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
0.8
1
-1 -0.75-0.5-0.25 0 0.25 0.5 0.75 1
Input Smith Chart
0.4 GHz
4 GHz
Output Smith Chart
0.4 GHz
4 GHz
Note: The gain for the unmatched device in a 50 ohm system is shown as the trace labeled “Insertion Gain (S21)”. In a circuit tuned
for a particular frequency band, it is expected that actual gain will be higher, up to the Maximum Stable Gain (GMAX).
S-Parameter Data
V
cc
= +5 V, I
cc
= 87 mA, T = +25°C, unmatched 50 Ohm system, reference plane at device leads
Freq
(MHz)
S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
400 -3.74 -154.94 16.08 172.65 -30.84 32.65 -4.47 155.03
600 -2.43 -174.00 16.93 152.42 -28.85 13.25 -6.02 149.89
800 -2.00 175.84 16.72 137.72 -28.64 3.42 -6.63 147.55
1000 -1.81 167.43 16.29 123.90 -28.38 -4.74 -7.05 144.48
1200 -1.71 160.50 15.71 112.48 -28.45 -10.23 -7.29 142.81
1400 -1.68 155.82 15.15 102.29 -28.29 -15.72 -7.67 139.67
1600 -1.66 149.16 14.58 91.96 -28.34 -19.66 -7.92 136.04
1800 -1.65 143.36 13.98 82.32 -28.40 -25.64 -8.05 132.86
2000 -1.56 137.28 13.45 72.43 -28.25 -30.76 -8.05 129.68
2200 -1.60 131.41 12.80 64.37 -28.52 -35.06 -7.96 125.67
2400 -1.43 126.29 12.14 56.45 -28.43 -39.47 -7.47 122.90
2600 -1.41 122.01 11.52 48.81 -28.73 -42.87 -7.49 122.21
2800 -1.43 117.57 10.99 41.39 -28.68 -47.17 -7.71 119.34
3000 -1.45 114.12 10.53 34.73 -28.78 -49.96 -7.92 116.57
3200 -1.36 109.38 10.15 27.42 -28.85 -52.90
-7.87 114.37
3400 -1.40 103.72 9.69 19.90 -29.00 -59.40 -7.85 106.77
3600 -1.32 98.51 8.99 12.40 -29.04 -63.10 -7.32 100.14
3800 -1.19 93.06 8.49 5.24 -29.04 -68.03 -6.75 96.77
4000 -1.11 89.37 8.02 -0.57 -29.02 -70.86 -6.53 95.94
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