NTE152 (NPN) & NTE153 (PNP)
Silicon Complementary Transistors
Audio Power Amplifier, Switch
Description:
The NTE152 (NPN) and NTE153 (PNP) are silicon complementary transistors in a standard TO220
type package designed for general purpose medium power switching and amplifier applications.
Features:
D Good Linearity of h
FE
Absolute Maximum Ratings: (T
A
= +25°C unless otherwise specified)
Collector–Base Voltage, V
CBO
90V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
90V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Current, I
E
–4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation (T
C
= +25°C), P
C
40W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, T
J
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. NTE152MP is a matched pair of NTE152 with their DC Current Gain (h
FE
) matched to within
10% of each other.
Note 2. Matched complementary pairs are available upon request (NTE55MCP). Matched comple-
mentary pairs have their gain specification (h
FE
) matched to within 10% of each other.
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Emitter Breakdown Voltage V
(BR)CEO
I
C
= 50mA, I
B
= 0 90 – – V
Collector Cutoff Current I
CBO
V
CB
= 90V, I
E
= 0 – – 20 µA
Emitter Cutoff Current I
EBO
V
EB
= 5V, I
C
= 0 – – 10 µA
DC Current Gain h
FE1
V
CE
= 5V, I
C
= 0.5A 40 – 200
h
FE2
V
CE
= 5V, I
C
= 3A 15 – –
Collector–Emitter Saturation Voltage V
CE(sat)
I
C
= 3A, I
B
= 0.3A – – 1.5 V
Base–Emitter Voltage V
BE
V
CE
= 5V, I
C
= 3A – – 1.5 V
Transition Frequency f
T
V
CE
= 5V, I
C
= 0.5A 3 8 – MHz
Collector Output Capacitance C
ob
V
CB
= 10V, I
E
= 0, f = 1MHz – 85 – pF
