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ZXTD4591E6TA

Part # ZXTD4591E6TA
Description ZETEX SOT236 DUAL 3K - Tape and Reel
Category IC
Availability Out of Stock
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1 + $0.28230



Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

ZXTD4591E6
ISSUE 1 - JULY 2000
DEVICE MARKING
4591
DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS
SUMMARY
NPN: V
CEO
=60V; I
C
= 1A; h
FE
=100-300
PNP: V
CEO
=-60V; I
C
= -1A; h
FE
=100-300
DESCRIPTION
Complementary NPN and PNP medium power transistors packaged in the 6
lead SOT23 package.
FEATURES
Low Equivalent On Resistance - NPN R
CE(sat)
210m at 1A
- PNP R
CE(sat)
355m at -1A
Low Saturation Voltage
h
FE
characterised up to 2A
I
C
=1A Continuous Collector Current
SOT23-6 package
APPLICATIONS
MOSFET gate driver
Low Power Motor Drive
Low Power DC-DC Converters
ORDERING INFORMATION
DEVICE REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY
PER REEL
ZXTD4591E6TA 7 8mm embossed 3000 units
ZXTD4591E6TC 13 8mm embossed 10000 units
Top View
1
SOT23-6
E2
B2
E1
C2
B1
C1
4591
C1
E1
B1
C2
E2
B2
ISSUE 1 - JULY 2000
ZXTD4591E6
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R
θJA
113 °C/W
Junction to Ambient (b) R
θJA
73 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t5 secs.
2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT NPN LIMIT PNP UNIT
Collector-Base Voltage V
CBO
80 -80 V
Collector-Emitter Voltage V
CEO
60 -60 V
Emitter-Base Voltage V
EBO
5-5V
Peak Pulse Current I
CM
2-2A
Continuous Collector Current I
C
1-1A
Base Current I
B
500 -500 mA
Power Dissipation at TA=25°C (a)
Linear Derating Factor
P
D
1.1
8.8
1.1
8.8
W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
P
D
1.7
13.6
1.7
13.6
W
mW/°C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 -55 to +150 °C
ISSUE 1 - JULY 2000
ZXTD4591E6
PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-80 V I
C
=-100A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
-60 V I
C
=-10mA*
Emitter-Base Breakdown Voltage V
(BR)EBO
-5 V I
E
=-100A
Collector Cut-Off Current I
CBO
-100 nA V
CB
=-60V
Emitter Cut-Off Current I
EBO
-100 nA V
EB
=-4V
Collector Emitter Cut-Off Current I
CES
-100 nA V
CES
=-60V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-0.3
-0.6
V
V
I
C
=-500mA, I
B
=-50mA*
I
C
=-1A, I
B
=-100mA*
Base-Emitter Saturation Voltage V
BE(sat)
-1.2 V I
C
=-1A, I
B
=-100mA*
Base-Emitter Turn-On Voltage V
BE(on)
-1.0 V I
C
=-1A, V
CE
=-5V*
Static Forward Current Transfer
Ratio
h
FE
100
100
80
15
300
I
C
=-1mA, V
CE
=-5V*
I
C
=-500mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
I
C
=-2A, V
CE
=-5V*
Transition Frequency f
T
150 MHz I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance C
obo
10 pF V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
3
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