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ULN2003AIDR

Part # ULN2003AIDR
Description Trans Darlington NPN 50V 0.5A16-Pin SOIC T/R - Tape and R
Category IC
Availability Out of Stock
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1 + $0.13690



Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

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FEATURES
DESCRIPTION/ORDERING INFORMATION
D, N, OR PW PACKAGE
(TOP VIEW)
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
1B
2B
3B
4B
5B
6B
7B
E
1C
2C
3C
4C
5C
6C
7C
COM
The ULN2003AI has a 2.7-k series base resistor for each Darlington pair for operation directly with TTL or 5-V
ULN2003AI
HIGH-VOLTAGE, HIGH-CURRENT
DARLINGTON TRANSISTOR ARRAY
SLRS054B JULY 2003 REVISED FEBRUARY 2005
500-mA-Rated Collector Current (Single
Output)
High-Voltage Outputs . . . 50 V
Output Clamp Diodes
Inputs Compatible With Various Types of
Logic
Relay-Driver Applications
The ULN2003AI is a high-voltage, high-current
Darlington transistor array. This device consists of
seven npn Darlington pairs that feature high-voltage
outputs with common-cathode clamp diodes for
switching inductive loads. The collector-current rating
of a single Darlington pair is 500 mA. The Darlington
pairs can be paralleled for higher current capability.
Applications include relay drivers, hammer drivers,
lamp drivers, display drivers (LED and gas
discharge), line drivers, and logic buffers.
CMOS devices.
ORDERING INFORMATION
T
A
PACKAGE ORDERABLE PART NUMBER TOP-SIDE MARKING
PDIP (N) Tube of 425 ULN2003AIN ULN2003AIN
Tube of 40 ULN2003AID
–40 ° C to 105 ° C SOIC (D) ULN2003AI
Reel of 2500 ULN2003AIDR
TSSOP (PW) Reel of 2000 ULN2003AIPWR UN2003AI
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright © 2003–2005, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
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7C
6C
5C
4C
3C
2C
1C
COM
7
6
5
4
3
2
1
7B
6B
5B
4B
3B
2B
1B
10
11
12
13
14
15
16
9
Output
C
COM
E
7.2 k
3 k
2.7 k
Input
B
All resistor values shown are nominal.
ULN2003AI
HIGH-VOLTAGE, HIGH-CURRENT
DARLINGTON TRANSISTOR ARRAY
SLRS054B JULY 2003 REVISED FEBRUARY 2005
LOGIC DIAGRAM
SCHEMATICS (EACH DARLINGTON PAIR)
2
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Absolute Maximum Ratings
(1)
Electrical Characteristics
ULN2003AI
HIGH-VOLTAGE, HIGH-CURRENT
DARLINGTON TRANSISTOR ARRAY
SLRS054B JULY 2003 REVISED FEBRUARY 2005
at 25 ° C free-air temperature (unless otherwise noted)
MIN MAX UNIT
V
CC
Collector-emitter voltage 50 V
Clamp diode reverse voltage
(2)
50 V
V
I
Input voltage
(2)
30 V
Peak collector current
(3) (4)
500 mA
I
OK
Output clamp current 500 mA
Total emitter-terminal current –2.5 A
T
A
Operating free-air temperature range –40 105 ° C
D package 73
θ
JA
Package thermal impedance
(3) (4)
N package 67 ° C/W
PW package 108
T
J
Operating virtual junction temperature 150 ° C
T
stg
Storage temperature range –65 150 ° C
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to the emitter/substrate terminal E, unless otherwise noted.
(3) Maximum power dissipation is a function of T
J
(max), θ
JA
, and T
A
. The maximum allowable power dissipation at any allowable ambient
temperature is P
D
= (T
J
(max) T
A
)/ θ
JA
. Operating at the absolute maximum T
J
of 150 ° C can affect reliability.
(4) The package thermal impedance is calculated in accordance with JESD 51-7.
T
A
= 25 ° C
PARAMETER TEST FIGURE TEST CONDITIONS MIN TYP MAX UNIT
I
C
= 200 mA 2.4
V
I(on)
On-state input voltage 5 V
CE
= 2 V I
C
= 250 mA 2.7 V
I
C
= 300 mA 3
I
I
= 250 µ A, I
C
= 100 mA 0.9 1.1
V
CE(sat)
Collector-emitter saturation voltage 4 I
I
= 350 µ A, I
C
= 200 mA 1 1.3 V
I
I
= 500 µ A, I
C
= 350 mA 1.2 1.6
I
CEX
Collector cutoff current 1 V
CE
= 50 V, I
I
= 0 50 µ A
V
F
Clamp forward voltage 7 I
F
= 350 mA 1.7 2 V
I
I(off)
Off-state input current 2 V
CE
= 50 V, I
C
= 500 µ A 50 65 µ A
I
I
Input current 3 V
I
= 3.85 V 0.93 1.35 mA
I
R
Clamp reverse current 6 V
R
= 50 V 50 µ A
C
i
Input capacitance V
I
= 0, f = 1 MHz 15 25 pF
3
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