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SN75372P

Part # SN75372P
Description DUAL MOSFET DRIVER/LINEAR INTERFACE
Category IC
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

SN75372
DUAL MOSFET DRIVER
SLLS025A – JULY 1986
Copyright 1986, Texas Instruments Incorporated
Revision Information
3–1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
Dual Circuits Capable of Driving
High-Capacitance Loads at High Speeds
Output Supply Voltage Range up to 24 V
Low Standby Power Dissipation
description
The SN75372 is a dual NAND gate interface
circuit designed to drive power MOSFETs from
TTL inputs. It provides high current and voltage
levels necessary to drive large capacitive loads at
high speeds. The device operates from a V
CC1
of
5 V and a V
CC2
of up to 24 V.
The SN75372 is characterized for operation from
0°C to 70°C.
schematic (each driver)
V
CC1
V
CC2
To Other
Driver
To Other
Driver
Output Y
GND
Input A
Enable E
1Y
7
2Y
6
E
2
EN
1A
1
2A
3
logic symbol
TTL/MOS
1
2
3
4
8
7
6
5
1A
E
2A
GND
V
CC1
1Y
2Y
V
CC2
D OR P PACKAGE
(TOP VIEW)
This symbol is in accordance with ANSI/IEEE Std 91-1984
and IEC Publication 617-12.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
SN75372
DUAL MOSFET DRIVER
SLLS025A – JULY 1986
3–2
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range, V
CC1
(see Note 1) 0.5 V to 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Supply voltage range, V
CC2
0.5 V to 25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage, V
I
5.5 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak output current, V
O
(t
w
< 10 ms, duty cycle < 50%) 500 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, T
A
0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
–65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Voltage values are with respect to network GND.
DISSIPATION RATING TABLE
PACKAGE
T
A
= 25°C DERATING FACTOR T
A
= 70°C
PACKAGE
A
POWER RATING ABOVE T
A
= 25°C
A
POWER RATING
D 725 mW 5.8 mW/°C 464 mW
P 1000 mW 8.0 mW/°C 640 mW
recommended operating conditions
MIN NOM MAX UNIT
Supply voltage, V
CC1
4.75 5 5.25 V
Supply voltage, V
CC2
4.75 20 24 V
High-level input voltage, V
IH
2 V
Low-level input voltage, V
IL
0.8 V
High-level output current, I
OH
–10 mA
Low-level output current, I
OL
40 mA
Operating free-air temperature, T
A
0 70 °C
SN75372
DUAL MOSFET DRIVER
SLLS025A – JULY 1986
3–3
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
electrical characteristics over recommended ranges of V
CC1
, V
CC2
, and operating free-air
temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP
MAX UNIT
V
IK
Input clamp voltage I
I
= –12 mA 1.5 V
V
OH
High level out
p
ut voltage
V
IL
= 0.8 V, I
OH
= –50 µA V
CC2
1.3 V
CC2
0.8
V
V
OH
High
-
le
v
el
o
u
tp
u
t
v
oltage
V
IL
= 0.8 V, I
OH
= –10 mA V
CC2
2.5 V
CC2
1.8
V
V
IH
= 2 V, I
OL
= 10 mA 0.15 0.3
V
OL
Low-level output voltage
V
CC2
= 15 V to 24 V,
I
OL
= 40 mA
V
IH
= 2 V,
0.25 0.5
V
V
F
Out
p
ut clam
p
diode forward voltage
V
I
=0
15
V
V
F
O
u
tp
u
t
clamp
-
diode
for
w
ard
v
oltage
V
I
=
0
,
F
=
1
.
5
V
I
I
Input current at maximum input
V
I
=55V
1
mA
I
I
voltage
V
I
=
5
.
5
V
1
mA
I
IH
High level in
p
ut current
Any A
V
I
=24V
40
µA
I
IH
High
-
le
v
el
inp
u
t
c
u
rrent
Any E
V
I
=
2
.
4
V
80
µ
A
I
IL
Low level in
p
ut current
Any A
V
I
=04V
–1 1.6
mA
I
IL
Lo
w-
le
v
el
inp
u
t
c
u
rrent
Any E
V
I
=
0
.
4
V
–2 3.2
mA
I
CC1(H)
Supply current from V
CC1
, both
outputs high
V
CC1
= 5.25 V, V
= 24 V,
2 4 mA
I
CC2(H)
Supply current from V
CC2
, both
outputs high
CC1
,
All inputs at 0 V,
No load
0.5 mA
I
CC1(L)
Supply current from V
CC1
, both
outputs low
V
CC1
= 5.25 V, V
= 24 V,
16 24 mA
I
CC2(L)
Supply current from V
CC2
, both
outputs low
CC1
,
All inputs at 5 V,
No load
7 13 mA
I
CC2(S)
Supply current from V
CC2
, standby
condition
V
CC1
= 0,
All inputs at 5 V,
V
CC2
= 24 V,
No load
0.5 mA
All typical values are at V
CC1
= 5 V, V
CC2
= 20 V, and T
A
= 25°C.
switching characteristics, V
CC1
= 5 V, V
CC2
= 20 V, T
A
= 25°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
t
DLH
Delay time, low-to-high-level output 20 35 ns
t
DHL
Delay time, high-to-low-level output 10 20 ns
t
TLH
Transition time, low-to-high-level output
C
L
= 390
p
F
R
D
=10
See Figure 1
20 30 ns
t
THL
Transition time, high-to-low-level output
C
L
=
390
pF
,
R
D
=
10
,
See
Fig
u
re
1
20 30 ns
t
PLH
Propagation delay time, low-to-high-level output 10 40 65 ns
t
PHL
Propagation delay time, high-to-low-level output 10 30 50 ns
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