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...................................................................................................................................................................................................... SBOS445 – JULY 2008

Micro-Power (50 µ A), Zer ø -Drift, Rail-to-Rail Out

Instrumentation Amplifier

• LOW OFFSET VOLTAGE: 25 µ V (max), G ≥ 100

The INA333 is a low-power, precision instrumentation

amplifier offering excellent accuracy. The versatile

• LOW DRIFT: 0.1 µ V/ ° C, G ≥ 100

3-op amp design, small size, and low power make it

• LOW NOISE: 50nV/ √ Hz, G ≥ 100

ideal for a wide range of portable applications.

• HIGH CMRR: 100dB (min), G ≥ 10

A single external resistor sets any gain from 1 to

• LOW INPUT BIAS CURRENT: 200pA (max)

1000. The INA333 is designed to use an

• SUPPLY RANGE: +1.8V to +5.5V

industry-standard gain equation: G = 1 + (100k Ω /R

• INPUT VOLTAGE: (V – ) +0.1V to (V+) – 0.1V

The INA333 provides very low offset voltage (25 µ V,

• OUTPUT RANGE: (V – ) +0.05V to (V+) – 0.05V

G ≥ 100), excellent offset voltage drift (0.1 µ V/ ° C,

G ≥ 100), and high common-mode rejection (100dB

• LOW QUIESCENT CURRENT: 50 µ A

at G ≥ 10). It operates with power supplies as low as

• OPERATING TEMPERATURE: – 40 ° C to +125 ° C

1.8V ( ± 0.9V), and quiescent current is only

• RFI FILTERED INPUTS

50 µ A — ideal for battery-operated systems. Using

autocalibration techniques to ensure excellent

• MSOP-8 AND DFN-8 PACKAGES

precision over the extended industrial temperature

range, the INA333 also offers exceptionally low noise

density (50nV/ √ Hz) that extends down to dc.

• BRIDGE AMPLIFIERS

The INA333 is available in both MSOP-8 and DFN-8

• ECG AMPLIFIERS

surface-mount packages and is specified over the

• PRESSURE SENSORS

= – 40 ° C to +125 ° C temperature range.

• MEDICAL INSTRUMENTATION

blank

• PORTABLE INSTRUMENTATION

• WEIGH SCALES

• THERMOCOUPLE AMPLIFIERS

• RTD SENSOR AMPLIFIERS

• DATA ACQUISITION

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas

Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2 All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

ABSOLUTE MAXIMUM RATINGS

(1)

PIN CONFIGURATIONS

IN-

IN+

V-

V+

OUT

INA333

REF

IN-

IN+

V-

V+

OUT

REF

Exposed

Thermal

DiePad

Underside

INA333

SBOS445 – JULY 2008 ......................................................................................................................................................................................................

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This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

PACKAGE/ORDERING INFORMATION

(1)

PRODUCT PACKAGE-LEAD PACKAGE DESIGNATOR PACKAGE MARKING

MSOP-8 DGK I333

INA333

DFN-8

(2)

DRG I333A

(1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI

web site at www.ti.com .

(2) Available Q4, 2008.

INA333 UNIT

Supply voltage +7 V

Analog input voltage range

(2)

(V – ) – 0.3 to (V+) + 0.3 V

Output short-circuit

(3)

Continuous

Operating temperature range, T

– 40 to +150 ° C

Storage temperature range, T

– 65 to +150 ° C

Junction temperature, T

+150 ° C

Human body model (HBM) 4000 V

ESD rating Charged device model (CDM) 1000 V

Machine model (MM) 200 V

(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may

degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond

those specified is not implied.

(2) Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.3V beyond the supply rails should

be current limited to 10mA or less.

(3) Short-circuit to ground.

DGK PACKAGE

DRG PACKAGE

MSOP-8

DFN-8

(TOP VIEW)

Product Folder Link(s): INA333

ELECTRICAL CHARACTERISTICS: V

= +1.8V to +5.5V

INA333

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Boldface limits apply over the specified temperature range, T

= – 40 ° C to +125 ° C.

At T

= +25 ° C, R

= 10k Ω , V

REF

= 0, and G = 1, unless otherwise noted.

INA333

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

INPUT

(1)

Offset voltage, RTI

(2)

OSI

± 10 ± 25/G ± 25 ± 75/G µ V

vs Temperature ± 0.1 ± 0.5/G µ V/ ° C

vs Power supply PSR 1.8V ≤ V

≤ 5.5V ± 1 ± 5/G ± 5 ± 15/G µ V/V

Long-term stability See note

(3)

Turn-on time to specified V

OSI

See Typical characteristics

Impedance

Differential Z

100 || 3 G Ω || pF

Common-mode Z

100 || 3 G Ω || pF

Common-mode voltage range V

= 0V (V – ) + 0.1 (V+) – 0.1 V

Common-mode rejection CMR DC to 60Hz

G = 1 V

= (V – ) + 0.1V to (V+) – 0.1V 80 90 dB

G = 10 V

= (V – ) + 0.1V to (V+) – 0.1V 100 110 dB

G = 100 V

= (V – ) + 0.1V to (V+) – 0.1V 100 115 dB

G = 1000 V

= (V – ) + 0.1V to (V+) – 0.1V 100 115 dB

INPUT BIAS CURRENT

Input bias current I

± 70 ± 200 pA

vs Temperature See Typical Characteristic curve pA/ ° C

Input offset current I

± 50 ± 200 pA

vs Temperature See Typical Characteristic curve pA/ ° C

INPUT VOLTAGE NOISE

Input voltage noise e

G = 100, R

= 0 Ω

f = 10Hz 50 nV/ √ Hz

f = 100Hz 50 nV/ √ Hz

f = 1kHz 50 nV/ √ Hz

f = 0.1Hz to 10Hz 1 µ V

Input current noise i

f = 10Hz 100 fA/ √ Hz

f = 0.1Hz to 10Hz 2 pA

GAIN

Gain equation G 1 + (100k Ω /R

) V/V

Range of gain 1 1000 V/V

Gain error V

= 5.5V, (V – ) + 100mV ≤ V

≤ (V+) – 100mV

G = 1 ± 0.01 ± 0.1 %

G = 10 ± 0.05 ± 0.25 %

G = 100 ± 0.07 ± 0.25 %

G = 1000 ± 0.25 ± 0.5 %

(1) Total V

, Referred-to-input = (V

OSI

) + (V

OSO

/G).

(2) RTI = Referred-to-input.

(3) 300-hour life test at +150 ° C demonstrated randomly distributed variation of approximately 1 µ V.

Product Folder Link(s): INA333

Part #	INA333AIDGKR
Description	SP Amp INSTR Amp Single R-R O/P Â±2.75V/5.5V 8-Pin VSSOP T/
Category	IC
Availability	Out of Stock
Qty	0

INA333AIDGKR

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