AFT09MS031NR1 AFT09MS031GNR1
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
Designed for mobile two -- way radio applications with frequencies from
764 to 941 MHz. The high gain, ruggedness and broadband performance of
these devices make them ideal for large--signal, common sourc e amplifier
applications in mobile radio equipment.
Narrowband Performance
(13.6 Vdc, I
DQ
= 500 mA, T
A
=25°C, CW)
Frequency
(MHz)
G
ps
(dB)
η
D
(%)
P1dB
(W)
764 18.0 74.1 32
870 17.2 71.0 31
941 15.7 68.1 31
800 MHz B roadband Performance (13.6 Vdc, I
DQ
= 100 mA, T
A
=25°C, CW)
Frequency
(MHz)
G
ps
(dB)
η
D
(%)
P1dB
(W)
760 15.7 62.0 44
820 15.7 63.0 37
870 15.5 61.0 36
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal
Type
VSWR
P
out
(W)
Test
Voltage
Result
870 CW >65:1 at all
Phase Angles
54
(3 dB Overdrive)
17 No Device
Degradation
Features
• Characterized for Operation from 764 to 941 MHz
• Unmatched Input and Output Allowing Wide Frequency Range Utilization
• Integrated ESD Protection
• Integrated Stability Enhancements
• Wideband — Full Power Across the Band (764–870 MHz)
• 225°C Capable Plastic Package
• Exceptional Thermal Performance
• High Linearity for: TETRA, SSB, LTE
• Cost--effective Over--molded Plastic Packaging
• In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13 inch Reel.
Typical Applications
• Output Stage 800 MHz Trunking Band Mobile Radio
• Output Stage 900 MHz Trunking Band Mobile Radio
Document Number: AFT09MS031N
Rev. 0, 5/2012
Freescale Semiconductor
Technical Data
764--941 MHz, 31 W, 13.6 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
AFT09MS031NR1
AFT09MS031GNR1
T O -- 2 7 0 -- 2
PLASTIC
AFT09MS031NR1
Figure 1. Pin Connections
(Top View)
Drain
Gate
Note: The backside of the package is the
source terminal for the transistor.
T O -- 2 7 0 -- 2 G U L L
PLASTIC
AFT09MS031GNR1
© Freescale Semiconductor, Inc., 2012.
ll rights reserved.
