 Semiconductor Components Industries, LLC, 2004

December, 2004 − Rev. 8

1 Publication Order Number:

BZX84C2V4LT1/D

BZX84B4V7LT1,

BZX84C2V4LT1 Series

Zener Voltage Regulators

225 mW SOT−23 Surface Mount

This series of Zener diodes is offered in the convenient, surface

mount plastic SOT−23 package. These devices are designed to provide

voltage regulation with minimum space requirement. They are well

suited for applications such as cellular phones, hand held portables,

and high density PC boards.

Features

• Pb−Free Packages are Available

• 225 mW Rating on FR−4 or FR−5 Board

• Zener Breakdown Voltage Range − 2.4 V to 75 V

• Package Designed for Optimal Automated Board Assembly

• Small Package Size for High Density Applications

• ESD Rating of Class 3 (>16 KV) per Human Body Model

• Tight Tolerance Series Available (See Page 4)

Mechanical Characteristics

CASE:

Void-free, transfer-molded, thermosetting plastic case

FINISH: Corrosion resistant finish, easily Solderable

MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260°C for 10 Seconds

POLARITY: Cathode indicated by polarity band

FLAMMABILITY RATING: UL 94 V−0

MAXIMUM RATINGS

Rating Symbol Max Unit

Total Power Dissipation on FR−5 Board,

(Note 1) @ T

= 25°C

225 mW

(Note

25 C

Derated above 25°C

Thermal Resistance, Junction−to−Ambient



225

1.8

556

mW/°C

°C/W

Total Power Dissipation on Alumina

Substrate, (Note 2) @ T

= 25°C

300 mW

Substrate

(Note

25 C

Derated above 25°C

Thermal Resistance, Junction−to−Ambient



300

2.4

417

mW/°C

°C/W

Junction and Storage

Temperature Range

, T

stg

−65 to

+150

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

1. FR−5 = 1.0 X 0.75 X 0.62 in.

2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.

Device* Package Shipping

†

ORDERING INFORMATION

SOT−23

CASE 318

STYLE 8

Cathode

Anode

BZX84CxxxLT1 SOT−23 3000/Tape & Reel

MARKING DIAGRAM

See specific marking information in the device marking

column of the Electrical Characteristics table on page 3 of

this data sheet.

DEVICE MARKING INFORMATION

xxx = Specific Device Code

M =Month Code

xxxM

*The “T1” suffix refers to an 8 mm, 7 inch reel.

The “T3” suffix refers to an 8 mm, 13 inch reel.

BZX84CxxxLT3 SOT−23 10,000/Tape & Reel

BZX84BxxxLT1 SOT−23 3000/Tape & Reel

BZX84BxxxLT3 SOT−23 10,000/Tape & Reel

http://onsemi.com

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

BZX84CxxxLT1G SOT−23

(Pb−Free)

3000/Tape & Reel

BZX84BxxxLT1G SOT−23

(Pb−Free)

3000/Tape & Reel

BZX84B4V7LT1, BZX84C2V4LT1 Series

http://onsemi.com

ELECTRICAL CHARACTERISTICS

(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T

= 25°C

unless otherwise noted, V

= 0.95 V Max. @ I

= 10 mA)

Symbol

Parameter

Reverse Zener Voltage @ I

Reverse Current

Maximum Zener Impedance @ I

Reverse Leakage Current @ V

Reverse Voltage

Forward Current

Forward Voltage @ I

V

Maximum Temperature Coefficient of V

C Max. Capacitance @ V

= 0 and f = 1 MHz

Zener Voltage Regulator

BZX84B4V7LT1, BZX84C2V4LT1 Series

http://onsemi.com

ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE)

(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T

= 25°C unless otherwise noted, V

= 0.90 V Max. @ I

= 10 mA)

(Devices listed in

bold, italic

are ON Semiconductor Preferred devices.)

(Volts)

ZT1

=5mA

(Note 3)

ZT1

()

(V)

ZT2

=1mA

(Note 3)

ZT2

()

(V)

ZT3

=20mA

(Note 3)

ZT3

()

Max Reverse

Leakage

Current



(mV/k)

@ I

ZT1

= 5 mA

C (pF)

Device

Marking

Min Nom Max

()

@ I

ZT1

5 mA

Min Max

()

@ I

ZT2

1 mA

Min Max

()

@ I

ZT3

20 mA

Volts

A

Min Max

C (pF)

@ V

= 0

f = 1 MHz

BZX84C2V4LT1, G* Z11 2.2 2.4 2.6 100 1.7 2.1 600 2.6 3.2 50 50 1 −3.5 0 450

BZX84C2V7LT1, G* Z12 2.5 2.7 2.9 100 1.9 2.4 600 3 3.6 50 20 1 −3.5 0 450

BZX84C3V0LT1 Z13 2.8 3 3.2 95 2.1 2.7 600 3.3 3.9 50 10 1 −3.5 0 450

BZX84C3V3LT1, G* Z14 3.1 3.3 3.5 95 2.3 2.9 600 3.6 4.2 40 5 1 −3.5 0 450

BZX84C3V6LT1, G* Z15 3.4 3.6 3.8 90 2.7 3.3 600 3.9 4.5 40 5 1 −3.5 0 450

BZX84C3V9LT1, G* Z16 3.7 3.9 4.1 90 2.9 3.5 600 4.1 4.7 30 3 1 −3.5 −2.5 450

BZX84C4V3LT1, G* W9 4 4.3 4.6 90 3.3 4 600 4.4 5.1 30 3 1 −3.5 0 450

BZX84C4V7LT1 Z1 4.4 4.7 5 80 3.7 4.7 500 4.5 5.4 15 3 2 −3.5 0.2 260

BZX84C5V1LT1 Z2 4.8 5.1 5.4 60 4.2 5.3 480 5 5.9 15 2 2 −2.7 1.2 225

BZX84C5V6LT1 Z3 5.2 5.6 6 40 4.8 6 400 5.2 6.3 10 1 2 −2.0 2.5 200

BZX84C6V2LT1 Z4 5.8 6.2 6.6 10 5.6 6.6 150 5.8 6.8 6 3 4 0.4 3.7 185

BZX84C6V8LT1 Z5 6.4 6.8 7.2 15 6.3 7.2 80 6.4 7.4 6 2 4 1.2 4.5 155

BZX84C7V5LT1 Z6 7 7.5 7.9 15 6.9 7.9 80 7 8 6 1 5 2.5 5.3 140

BZX84C8V2LT1 Z7 7.7 8.2 8.7 15 7.6 8.7 80 7.7 8.8 6 0.7 5 3.2 6.2 135

BZX84C9V1LT1 Z8 8.5 9.1 9.6 15 8.4 9.6 100 8.5 9.7 8 0.5 6 3.8 7.0 130

BZX84C10LT1, G* Z9 9.4 10 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7 4.5 8.0 130

BZX84C11LT1, G* Y1 10.4 11 11.6 20 10.2 11.6 150 10.4 11.8 10 0.1 8 5.4 9.0 130

BZX84C12LT1, G* Y2 11.4 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8 6.0 10.0 130

BZX84C13LT1, G* Y3 12.4 13 14.1 30 12.3 14 170 12.5 14.2 15 0.1 8 7.0 11.0 120

BZX84C15LT1 Y4 14.3 15 15.8 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13.0 110

BZX84C16LT1, G* Y5 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14.0 105

BZX84C18LT1 Y6 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16.0 100

BZX84C20LT1, G* Y7 18.8 20 21.2 55 18.7 21.1 225 18.9 21.4 20 0.05 14 14.4 18.0 85

BZX84C22LT1, G* Y8 20.8 22 23.3 55 20.7 23.2 250 20.9 23.4 25 0.05 15.4 16.4 20.0 85

BZX84C24LT1 Y9 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22.0 80

Below

ZT1

=2mA

ZT1

Below

ZT2

= 0.1 m

ZT2

Below

ZT3

=10mA

ZT3

Below

Max Reverse

Leakage

Current



(mV/k) Below

@ I

ZT1

= 2 mA

C (pF)

Device

Marking

Min Nom Max

Below

@ I

ZT1

2 mA

Min Max

Below

@ I

ZT4

0.5 mA

Min Max

Below

@ I

ZT3

10 mA

(V)

A

Min Max

C (pF)

@ V

= 0

f = 1 MHz

BZX84C27LT1, G* Y10 25.1 27 28.9 80 25 28.9 300 25.2 29.3 45 0.05 18.9 21.4 25.3 70

BZX84C30LT1 Y11 28 30 32 80 27.8 32 300 28.1 32.4 50 0.05 21 24.4 29.4 70

BZX84C33LT1, G* Y12 31 33 35 80 30.8 35 325 31.1 35.4 55 0.05 23.1 27.4 33.4 70

BZX84C36LT1 Y13 34 36 38 90 33.8 38 350 34.1 38.4 60 0.05 25.2 30.4 37.4 70

BZX84C39LT1, G* Y14 37 39 41 130 36.7 41 350 37.1 41.5 70 0.05 27.3 33.4 41.2 45

BZX84C43LT1, G* Y15 40 43 46 150 39.7 46 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40

BZX84C47LT1, G* Y16 44 47 50 170 43.7 50 375 44.1 50.5 90 0.05 32.9 42.0 51.8 40

BZX84C51LT1 Y17 48 51 54 180 47.6 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40

BZX84C56LT1, G* Y18 52 56 60 200 51.5 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40

BZX84C62LT1 Y19 58 62 66 215 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35

BZX84C68LT1, G* Y20 64 68 72 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35

BZX84C75LT1, G* Y21 70 75 79 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35

3. Zener voltage is measured with a pulse test current I

at an ambient temperature of 25°C.

* The “G” suffix indicates Pb−Free package available.

Part #	BZX84C3V6LT1G
Description	ZEN SOT23 REG .225W 3.6V
Category	DIODE
Availability	In Stock
Qty	250

BZX84C3V6LT1G

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