Features

• Wide frequency range: 18 - 28 GHz

• High gain: 20 dB

• Power: @27 GHz, P-1dB=30 dBm

• Highly linear: OIP3=38dBm

• Integrated RF power detector

• 5.0 Volt, -0.6 Volt, 900mA operation

Applications

• Microwave Radio systems

• Satellite VSAT and DBS systems

• LMDS & Pt-Pt mmW Long Haul

• 802.16 & 802.20 WiMax BWA

• WLL and MMDS loops

• Commercial grade military

• Can be driven by AMMC-6345, increasing overall

gain.

Description

The AMMC-6425 MMIC is a broadband 1W power amplier

designed for use in transmitters that operate in various

frequency bands between 18GHz and 28GHz. This MMIC

optimized for linear operation with an output third order

intercept point (OIP3) of 38dBm. At 27GHz it provides

30dBm of output power (P-1dB) and 20dB of gain. The

device has input and output matching circuitry for use

in 50 Ω environments. The AMMC-6425 also integrates

a temperature compensated RF power detection circuit

that enables power detection of 0.3V/W. DC bias is simple

and the device operates on widely available 5V for cur-

rent supply (negative voltage only needed for Vg). It is

fabricated in a PHEMT process for exceptional power and

gain performance. For improved reliability and moisture

protection, the die is passivated at the active areas.

Chip Size: 2500 x 1750 µm (100 x 69 mils)

Chip Size Tolerance: ± 10 µm (±0.4 mils)

Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils)

Pad Dimensions: 100 x 100 µm (4 ± 0.4 mils)

AMMC-6425 Absolute Maximum Ratings

[1]

Note:

1. Operation in excess of any one of these conditions may result in permanent damage to this device.

Note: These devices are ESD sensitive. The following precautions are strongly recommended. Ensure

that an ESD approved carrier is used when dice are transported from one destination to another.

Personal grounding is to be worn at all times when handling these devices

Symbol Parameters/Conditions Units Min. Max.

Positive Drain Voltage V 7

Gate Supply Voltage V -3 0.5

Drain Current mA 1500

CW Input Power dBm 23

Operating Channel Temp. ° C +150

stg

Storage Case Temp. ° C -65 +150

max

Maximum Assembly Temp.

(60 sec max)

° C +300

AMMC - 6425

18 - 28 GHz Power Amplier

Data Sheet

Gain at 23 GHz P-1dB at 18 GHz P-1dB at 28 GHz

Typical distribution of Small Signal Gain and Output Power @P-1dB. Based on 1500 part sampled over several pro-

duction lots.

AMMC-6425 RF Specications

[3, 4, 5]

= 25°C, V

=5V, I

d(Q)=

900 mA, Z

=50 Ω)

AMMC-6425 DC Specications/Physical Properties

[1]

Notes:

1. Ambient operational temperature T

=25°C unless otherwise noted.

2. Channel-to-backside Thermal Resistance (θ

ch-b

) = 10°C/W at T

channel

) = 107°C as measured using infrared microscopy. Thermal Resistance

at backside temperature (T

) = 25°C calculated from measured data.

Notes:

3. Small/Large -signal data measured in wafer form T

= 25°C.

4. 100% on-wafer RF test is done at frequency = 18, 23, and 28 GHz. Statistics based on 1500 part sample

5. Specications are derived from measurements in a 50 Ω test environment. Aspects of the amplier performance may be improved over a

more narrow bandwidth by application of additional conjugate, linearity, or power matching.

Symbol Parameters and Test Conditions Units Min. Typ. Max.

Drain Supply Current

(under any RF power drive and temperature)

=5.0 V, V

set for I

Typical)

mA 900 1000

Gate Supply Operating Voltage

d(Q)

= 900 (mA))

V -0.85 -0.7 -0.55

ch-b

Thermal Resistance

[2]

(Backside temperature, T

= 25°C)

°C/W 8.9

Symbol Parameters and Test Conditions Units Minimum Typical Maximum Sigma

Gain Small-signal Gain

[4]

dB 16.5 18.5 0.5

-1dB

Output Power at 1dB Gain Compression dBm 27.5 28.5 0.25

-3dB

Output Power at 3dB Gain Compression dBm 30 0.20

OIP3 Third Order Intercept Point;

Df=100MHz; Pin=-20dBm

dBm 38 0.72

RLin Input Return Loss

[4]

dB -15 0.79

RLout Output Return Loss

[4]

dB -14 0.54

Isolation Min. Reverse Isolation dB -45 1.20

LSL

16.5 17 17.5 18 18.5 19 19.5 20 20.5 21

LSL

28 29

LSL

28 29

AMMC-6425 Typical Performances (T

= 25°C, V

=5.0 V, I

= 900 mA, Z

= Z

out

= 50 Ω)

NOTE: These measurements are in a 50 Ω test environment. Aspects of the amplier performance may be improved

over a more narrow bandwidth by application of additional conjugate, linearity, or power matching.

Figure 2. Typical Return Loss (Input and

Output)

Figure 3. Typical Output Power (@P-1dB)

and PAE

Figure 4. Typical Noise Figure Figure 5. Typical Output 3

Order Inter-

cept Pt.

Figure 6. Typical Output Power, PAE, and

Total Drain Current versus Input Power at

24GHz

Figure 7. Typical S11 over temperature Figure 8. Typical S22 over temperature Figure 9. Typical Gain over temperature

Figure 1. Typical Gain and Reverse Isola-

tion

15 20 25 30 35

Frequency [GHz]

S21[dB]

-60

-40

-20

S12 [dB]

S21[dB]

S12[dB]

-30

-25

-20

-15

-10

-5

15 20 25 30 35

Frequency [GHz]

Return Loss [dB]

S11[dB]

S22[dB]

16 18 20 22 24 26 28 30

Frequency [GHz]

P-1 [dBm], PAE [%]

P-1

PAE

16 18 20 22 24 26 28 30

Frequency [GHz]

Noise Figure [dB]

16 18 20 22 24 26 28

Freq [GHz]

OIP3 [dBm]

-10 -5 0 5 10 15 20

Pin [dBm]

Pout [dBm], PAE [%]

200

400

600

800

1000

1200

1400

Id [mA]

Pout

PAE

-25

-20

-15

-10

-5

10 15 20 25 30 35

Frequency[GHz]

S11[dB]

~+20C

~-40C

~+85C

-25

-20

-15

-10

-5

10 15 20 25 30 35

Frequency [GHz]

S22 [dB]

~+20C

~-40C

~+85C

10 15 20 25 30 35

Frequency [GHz]

S21 [dB]

~+20C

~-40C

~+85C

Part #	AMMC-6425-W10
Description	RF AMP MOD SGL PWR AMP 28GHZ- Gel-pak, waffle pack, wafer
Category	WAFER DIE
Availability	Out of Stock
Qty	0

AMMC-6425-W10

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Technical Document