4
HSMP-389x Series Typical Performance, T
C
= 25°C, each diode
Typical Applications for Multiple Diode Products
Figure 1. Total RF Resistance at 25°C
vs. Forward Bias Current.
100
10
1
0.1
RF RESISTANCE (OHMS)
I
F
– FORWARD BIAS CURRENT (mA)
0.01 0.1 1 10 100
120
115
110
105
100
95
90
85
11030
I
F
– FORWARD BIAS CURRENT (mA)
Figure 3. 2nd Harmonic Input
Intercept Point vs. Forward Bias
Current.
INPUT INTERCEPT POINT (dBm)
Diode Mounted as a
Series Attenuator in a
50 Ohm Microstrip and
Tested at 123 MHz
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.20
04 8121620
V
R
– REVERSE VOLTAGE (V)
TOTAL CAPACITANCE (pF)
1 MHz
1 GHz
Figure 2. Capacitance vs. Reverse
Voltage.
200
160
120
80
40
0
10 2015 25 30
T
rr
– REVERSE RECOVERY TIME (nS)
FORWARD CURRENT (mA)
Figure 4. Typical Reverse Recovery
Time vs. Reverse Voltage.
V
R
= –2V
V
R
= –5V
V
R
= –10V
100
10
1
0.1
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2
I
F
– FORWARD CURRENT (mA)
V
F
– FORWARD VOLTAGE (V)
Figure 5. Forward Current vs. Forward
Voltage.
125°C
25°C
–50°C
1
123
4
0
56
b1 b2 b3
2
3
1
11
RF in
RF out
2
2
3
456
1
0
0
2
+V
–V
“ON”
“OFF”
Figure 6. HSMP-389L used in a SP3T Switch. Figure 7. HSMP-389L Unconnected Trio used in a
Dual Voltage, High Isolation Switch.
