4-154
Up to 6 GHz Medium Power
Silicon Bipolar Transistor
Technical Data
Features
• High Output Power:
12.0 dBm Typical P
1 dB
at 2.0␣ GHz
20.5 dBm Typical P
1 dB
at 4.0␣ GHz
• High Gain at
1␣ dB␣ Compression:
14.0 dB Typical
G
1 dB
at 2.0␣ GHz
9.5 dB Typical
G
1 dB
at 4.0␣ GHz
• Low Noise Figure:
1.9 dB Typical
NF
O
at 2.0␣ GHz
• High Gain-Bandwidth
Product: 8.0 GHz Typical f
T
• Hermetic Gold-ceramic
Microstrip Package
AT-42010
100 mil Package
Description
Hewlett-Packard’s AT-42010 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-42010 is housed in a hermetic,
high reliability 100 mil ceramic
package. The 4 micron emitter-to-
emitter pitch enables this transis-
tor to be used in many different
functions. The 20 emitter finger
interdigitated geometry yields a
medium sized transistor with
impedances that are easy to match
for low noise and medium power
applications. This device is
designed for use in low noise,
wideband amplifier, mixer and
oscillator applications in the VHF,
UHF, and microwave frequencies.
An optimum noise match near
50␣ Ω up to 1 GHz , makes this
device easy to use as a low noise
amplifier.
The AT-42010 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz f
T
Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
5965-8910E
