Freelance Electronics Components Distributor
Closed Dec 25th-26th
800-300-1968

We Stock Hard to Find Parts
My Account | My Orders | My Cart
Questions? (800) 300-1968

VP0109N3-G

Part # VP0109N3-G
Description Trans MOSFET P-CH 90V 0.25A 3-Pin TO-92 (Alt: VP0109N3-G)
Category TRANSISTOR
Availability In Stock
Qty 22
Qty Price
1 + $0.38871
Manufacturer Available Qty
Supertex
Date Code: 0618
  • Shipping Freelance Stock: 22
    Ships Immediately

Related Items

VP0106
SI
TRANSISTOR
VP0106
$0.20873
VP0109N9
SUPERTEX INC.
TRANSISTOR
VP0109N9
$19.74580
001021
Solitron
TRANSISTOR
001021
$15.15375
0012B
Military Spec
TRANSISTOR
0012B
 
01001
Military Spec
TRANSISTOR
01001
$56.83932
014-505541
Fairchild Semiconductor
TRANSISTOR
014-505541
 


Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

Supertex inc.
Supertex inc.
www.supertex.com
Doc.# DSFP-VP0109
C082313
VP0109
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
SiVP
0 109
YYWW
P-Channel Enhancement-Mode
Vertical DMOS FETs
Features
► Free from secondary breakdown
► Low power drive requirement
► Ease of paralleling
► Low C
ISS
and fast switching speeds
► Excellent thermal stability
► Integral source-drain diode
► High input impedance and high gain
Applications
► Motor controls
► Converters
► Ampliers
► Switches
► Power supply circuits
► Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
General Description
This enhancement-mode (normally-off) transistor utilizes
a vertical DMOS structure and Supertex’s well-proven,
silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities
of bipolar transistors and the high input impedance and
positive temperature coefcient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Absolute Maximum Ratings
Parameter Value
Drain-to-source voltage BV
DSS
Drain-to-gate voltage BV
DGS
Gate-to-source voltage ±20V
Operating and storage temperature -55
O
C to +150
O
C
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
TO-92
Product Marking
Package may or may not include the following marks: Si or
Pin Conguration
TO-92
GATE
SOURCE
DRAIN
Product Summary
BV
DSS
/BV
DGS
R
DS(ON)
(max)
I
D(ON)
(min)
-90V 8.0Ω -500mA
Typical Thermal Resistance
Package θ
ja
TO-92 132
O
C/W
Ordering Information
Part Number Package Option Packing
VP0109N3-G TO-92 1000/Bag
VP0109N3-G P002
TO-92 2000/Reel
VP0109N3-G P003
VP0109N3-G P005
VP0109N3-G P013
VP0109N3-G P014
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
2
Supertex inc.
www.supertex.com
Doc.# DSFP-VP0109
C082313
VP0109
Electrical Characteristics (T
A
= 25°C unless otherwise specied)
Sym Parameter Min Typ Max Units Conditions
BV
DSS
Drain-to-source breakdown voltage -90 - - V V
GS
= 0V, I
D
= -1.0mA
V
GS(th)
Gate threshold voltage -1.5 - -3.5 V V
GS
= V
DS
, I
D
= -1.0mA
ΔV
GS(th)
Change in V
GS(th)
with temperature - 5.8 6.5 mV/
O
C V
GS
= V
DS
, I
D
= -1.0mA
I
GSS
Gate body leakage current - -1.0 -100 nA V
GS
= ±20V, V
DS
= 0V
I
DSS
Zero gate voltage drain current
- - -10 µA V
GS
= 0V, V
DS
= Max Rating
- - -1.0 mA
V
DS
= 0.8 Max Rating,
V
GS
= 0V, T
A
= 125
O
C
I
D(ON)
On-state drain current
-0.15 -0.25 -
A
V
GS
= -5.0V, V
DS
= -25V
-0.5 -1.2 - V
GS
= -10V, V
DS
= -25V
R
DS(ON)
Static drain-to-source
on-state resistance
- 11 15
Ω
V
GS
= -5.0V, I
D
= -100mA
- 6.0 8.0 V
GS
= -10V, I
D
= -500mA
ΔR
DS(ON)
Change in R
DS(ON)
with temperature - 0.55 1.0 %/
O
C V
GS
= -10V, I
D
= -500mA
G
FS
Forward transconductance 150 190 - mmho V
DS
= -25V, I
D
= -500mA
C
ISS
Input capacitance - 45 60
pF
V
GS
= 0V,
V
DS
= -25V,
f = 1.0MHz
C
OSS
Common source output capacitance - 22 30
C
RSS
Reverse transfer capacitance - 3.0 8.0
t
d(ON)
Turn-on delay time - 4.0 6.0
ns
V
DD
= -25V,
I
D
= -500mA,
R
GEN
= 25Ω
t
r
Rise time - 3.0 10
t
d(OFF)
Turn-off delay time - 8.0 12
t
f
Fall time - 4.0 10
V
SD
Diode forward voltage drop - -1.2 -2.0 V V
GS
= 0V, I
SD
= -1.0A
t
rr
Reverse recovery time - 400 - ns V
GS
= 0V, I
SD
= -1.0A
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
Pulse
Generator
VDD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
f
t
r
INPUT
R
GEN
INPUT
OUTPUT
0V
VDD
0V
-10V
Notes:
† I
D
(continuous) is limited by max rated T
j
.
Thermal Characteristics
Package
I
D
(continuous)
†
I
D
(pulsed)
Power Dissipation
@T
C
= 25
O
C
I
DR
†
I
DRM
TO-92 -250mA -800mA 1.0W -250mA -800A
3
Supertex inc.
www.supertex.com
Doc.# DSFP-VP0109
C082313
VP0109
Typical Performance Curves
BV
DSS
Variation with Temperature
BV
DSS
(normalized)
1.10
1.06
1.02
0.98
0.94
0.90
-50 0 50 100 150
T
j
(
O
C)
Transfer Characteristics
On-Resistance vs. Drain Current
R
DS(ON)
(ohms)
50
40
30
20
10
0
I
D
(amperes)
0 -0.3 -0.6 -0.9 -1.2 -1.5
V
GS
= -5.0V
V
GS
= -10V
-1.0
-0.8
-0.6
-0.4
-0.2
0
0 -2 -4 -6 -8 -10
V
GS
(volts)
V
DS
= -25V
T
A
= -55
O
C
T
A
= 25
O
C
T
A
= 125
O
C
V
DS
= -10V
V
DS
= -40V
70pf
70pf
-50 0 50 100 150
-1.6
-1.4
-1.2
-1.0
-0.8
0.6
V
(th)
and R
DS
Variation with Temperature
Capacitance vs. Drain-to-Source Voltage
Gate Drive Dynamic Characteristics
V
DS
(volts)
0 -10 -20 -30 -40
-10
-8
-6
-4
-2
0
V
GS(th)
(normalized)
V
GS
(volts)
C (picofarads)
100
75
50
25
0
f = 1MHz
C
ISS
C
OSS
C
RSS
-1.6
-1.4
-1.2
-1.0
-0.8
R
DS(ON)
(normalized)
R
DS(ON)
@ 10V, -0.5A
R
DS(ON)
@ -5V, -0.1A
V
(th)
@ -1.0mA
0 0.2 0.4 0.6 0.8 1.0
Q
G
(nanocoulombs)
45pf
T
j
(
O
C)
I
D
(amperes)
12NEXT
Address
Freelance Electronics
13197 Sandoval Street
Santa Fe Springs, CA 90670
 
Hours of Operation  (Holiday Hours)
Monday-Friday 7:30am-4:30pm PST
(Deadline for next day shipment 2:00pm PST)
Seal
Government Cage code#-1V4R6
Duns Number# 788130532
Certified Small Disadvantaged Business
Customer Service
Company
Information
Connect with Us
Twitter Facebook Instagra,
This site is protected by Trustwave's Trusted Commerce program