ZXTC2063E6
Issue 1 - October 2007 2 www.zetex.com
© Zetex Semiconductors plc 2007
Absolute maximum and thermal ratings
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(c) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in
still air conditions.
(d) As above measured at t<5 seconds.
(e) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance
graph.
(f) For device with one active die, both collectors attached to a common sink.
(g) For device with two active dice running at equal power, split sink 50% to each collector.
Parameter Symbol Limit Unit
Collector-base voltage V
CBO
130(-45) V
Collector-emitter voltage V
CEO
40(-40) V
Emitter-collector voltage (reverse blocking) V
ECO
6(-3) V
Emitter-base voltage V
EBO
7(-7) V
Continuous collector current
(c)(f)
I
C
3.5(-3) A
Peak pulse current I
CM
9(-9) A
Base current I
B
1(-1) A
Power dissipation @ T
amb
= 25°C
(a)(f)
0.7 W
Linear derating factor P
D
5.6 mW/°C
Power dissipation @ T
amb
= 25°C
(b)(f)
0.9 W
Linear derating factor P
D
7.2 mW/°C
Power dissipation @ T
amb
= 25°C
(b)(g)
1.1 W
Linear derating factor P
D
8.8 mW/°C
Power dissipation @ T
amb
= 25°C
(c)(f)
1.1 W
Linear derating factor P
D
8.8 mW/°C
Power dissipation @ T
amb
= 25°C
(d)(f)
1.7 W
Linear derating factor P
D
13.6 mW/°C
Operating and storage temperature range T
j
, T
stg
-55 to +150
°C
Thermal resistance junction to ambient
(a)(f)
R
⍜JC
179 °C/W
Thermal resistance junction to ambient
(b)(f)
R
⍜JA
139 °C/W
Thermal resistance junction to ambient
(b)(g)
R
⍜JC
113 °C/W
Thermal resistance junction to ambient
(c)(f)
R
⍜JC
113 °C/W
Thermal resistance junction to ambient
(d)(f)
R
⍜JA
73 °C/W
