NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 2 MARCH 1994
FEATURES
* 30 Volt V
CEO
* 1 Amp continuous current
*P
tot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
50 V
Collector-Emitter Voltage V
CEO
30 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current I
CM
2A
Continuous Collector Current I
C
1A
Power Dissipation at T
amb
= 25°C P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
50 V
I
C
=100µA, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
30 V IC=10mA, I
B
=0
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5V
I
E
=100µA, I
C
=0
Collector Cut-Off
Current
I
CBO
0.1
10
µA
µA
V
CB
=40V
V
CB
=40V, T
amb
=100°C
Emitter Cut-Off Current I
EBO
0.1
µA
V
EB
=4V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5
1
V
V
I
C
=1A, I
B
=100mA*
I
C
=2A, I
B
=200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.25 V I
C
=1A, I
B
=100mA*
Base-Emitter
Turn-on Voltage
V
BE(on)
1VIC=1A,V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
70
100
80
40
300
I
C
=50mA, V
CE
=2V*
I
C
=500mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
Transition Frequency f
T
150 MHz I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance C
obo
15 pF V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤ 2%
E-Line
TO92 Compatible
ZTX449
3-173
C
B
E
D.C.
1s
100ms
10ms
1.0ms
300µs
100µs
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
IC - Collector Current (Amps)
V
C
E
(sat)
- (V
olts)
IC - Collector Current (Amps) IC - Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
IC - Collector Current (Amps)
V
BE(on)
v I
C
h
F
E
V
BE
(
sa
t
)
- (V
olts)
V
BE
(o
n
)
-
(
V
o
l
t
s
)
I
C
-
Co
l
le
c
to
r
Cur
r
e
nt
(
Am
ps)
VCE - Collector Voltage (Volts)
Safe Operating Area
1 10 100
0.01
0.1
1
10
Single Pulse Test at T
amb
=25°C
40
80
120
160
200
0
10
0.2
0.4
0.6
0.8
Switching Speeds
IC - Collector Current (Amps)
Switching
t
i
m
e
0.001
0.01
0.1 1
I
C
/I
B
=10
0.1
1
I
B1
=I
B2
=I
C
/10
0.01
ts
tf
td
tr
ts
ns
tf,tr,td
ns
100
50
150
0
V
CE
=2V
0
I
C
/I
B
=10
0.2
0.4
0.8
1.0
1.2
1.4
1.6
1.8
0.6
V
CE
=2V
ts
tf
td
tr
800
400
200
600
0
0.001
1
0.01 0.1
10
0.2
0.4
0.8
1.0
1.2
1.4
1.6
1.8
0.6
0.001
1
0.01 0.1
10
0.001
1
0.01 0.1
10
0.1
V
CE
=10V
ZTX449
3-174
