B-24 01/99
2N6449, 2N6450
N-Channel Silicon Junction Field-Effect Transistor
¥ High Voltage
Absolute maximum ratings at T
A
= 25¡C
2N6449 2N6450
Reverse Gate Source Voltage – 300 V – 200 V
Reverse Gate Drain Voltage – 300 V – 200 V
Continuous Forward Gate Current 10 mA 10 mA
Continuous Device Power Dissipation 800 mW 800 mW
Power Derating 6.4 mW/°C 6.4 mW/°C
TOÐ39 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
At 25°C free air temperature: 2N6449 2N6450 Process NJ42
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V
(BR)GSS
– 300 – 200 V I
G
= – 10 µA, V
DS
= ØV
– 100 nA V
GS
= – 150V, V
DS
= ØV
Gate Reverse Current I
GSS
– 100 nA V
GS
= – 100V, V
DS
= ØV
– 100 µA V
GS
= – 150V, V
DS
= ØV T
A
= 150°C
– 100 µA V
GS
= – 100V, V
DS
= ØV T
A
= 150°C
Gate Source Cutoff Voltage V
GS(OFF)
– 2 – 15 – 2 – 15 V V
DS
= 30V, I
D
= 4 nA
Drain Saturation Current (Pulsed) I
DSS
210210mAV
DS
= 30V, V
GS
= ØV
Dynamic Electrical Characteristics
Common Source Forward
Y
fs
0.5 3 0.5 3 mS V
DS
= 30V, V
GS
= ØV f = 1 kHz
Transfer Admittance
Common Source Output Conductance Y
os
100 100 µS V
DS
= 30V, V
GS
= ØV f = 1 kHz
Common Source Input Capacitance C
iss
20 20 pF V
DS
= 30V, V
GS
= ØV f = 1 MHz
Common Source
C
rss
2.5 2.5 pF V
DS
= 30V, V
GS
= ØV f = 1 MHz
Reverse Transfer Capacitance
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-24
