NPN SILICON PLANAR TRANSISTOR 2N917
TO-72
Metal Can Package
Amplifier Transistor
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL VALUE UNIT
Collector Base Voltage
V
CBO
30 V
Collector Emitter Voltage
V
CEO
15 V
Emitter Base Voltage
V
EBO
3V
Collector Current - Continuous
I
C
50 mA
Power Dissipation @ TA=25ºC
P
D
200 mW
Derate Above 25ºC 1.14 mW/ºC
Power Dissipation @ T
C
=25ºC P
D
300 mW
Derate Above 25ºC 1.71 mW/ºC
Operating & Storage Junction
T
j
, T
stg
-65 to +200 ºC
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise )
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT
Collector Emitter Sustaining Voltage
V
CEO(SUS)
I
C
=3mA, I
B
=0
15 - - V
Collector Base Voltage
V
CBO
I
C
=1µA, I
E
=0
30 - - V
Emitter Base Voltage
V
EBO
I
E
=10µA, I
C
=0
3.0 - V
Collector Cut off Current
I
CBO
V
CB
=15V, I
E
=0
- - 1.0 nA
VCB=15V, IE=0, TA=150ºC - - 1.0
A
DC Current Gain
h
FE
I
C
=3mA, V
CE
=1V
20 - 200
Collector Emitter Saturation Voltage
V
CE(sat)
I
C
=10mA, I
B
=1mA
- - 0.4 V
Base Emitter Saturation Voltage
V
BE(sat)
I
C
=10mA, I
B
=1mA
- - 1.0 V
Continental Device India Limited
Data Sheet Page 1 of 4
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
