7-31
7
TN0104
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Note: See Package Outline section for dimensions.
Package Options
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Features
Low threshold —1.6V max.
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
Applications
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
TO-243AA
(SOT-89)
G
D
S
D
T
-
2
S G D
BV
DSS
/R
DS(ON)
V
GS(th)
I
D(ON)
BV
DGS
(max) (max) (min) TO-92 TO-243AA* Die
†
40V 1.8Ω 1.6V 2.0A TN0104N3 — TN0104ND
40V 2.0Ω 1.6V 2.0A — TN0104N8 —
*
Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
†
MIL visual screening available
Order Number / Package
Ordering Information
Absolute Maximum Ratings
Drain-to-Source Voltage BV
DSS
Drain-to-Gate Voltage BV
DGS
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
*
For TO-39 and TO-92, distance of 1.6 mm from case for 10 seconds.
Product marking for TO-243AA:
Where *=2-week alpha date code
TN1L*
