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2N5194

Part # 2N5194
Description Bipolar Transistors - BJT 4A60V 40W PNP
Category TRANSISTOR
Availability Out of Stock
Qty 0
Qty Price
1 + $0.16302

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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

Silicon PNP Power Transistors
. . . for use in power amplifier and switching circuits, — excellent
safe area limits. Complement to NPN 2N5191, 2N5192
*MAXIMUM RATINGS
Rating Symbol 2N5194 2N5195 Unit
Collector–Emitter Voltage V
CEO
60 80 Vdc
Collector–Base Voltage V
CB
60 80 Vdc
Emitter–Base Voltage V
EB
5.0 Vdc
Collector Current I
C
4.0 Adc
Base Current I
B
1.0 Adc
Total Power Dissipation @ T
C
= 25C
Derate above 25C
P
D
40
320
Watts
mW/C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–65 to +150 C/W
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case θ
JC
3.12 C/W
*ELECTRICAL CHARACTERISTICS (T
C
= 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(I
C
= 0.1 Adc, I
B
= 0) 2N5194
2N5195
V
CEO(sus)
60
80
—
—
Vdc
Collector Cutoff Current
(V
CE
= 60 Vdc, I
B
= 0) 2N5194
(V
CE
= 80 Vdc, I
B
= 0) 2N5195
I
CEO
—
—
1.0
1.0
mAdc
Collector Cutoff Current
(V
CE
= 60 Vdc, V
BE(off)
= 1.5 Vdc) 2N5194
(V
CE
= 80 Vdc, V
BE(off)
= 1.5 Vdc) 2N5195
(V
CE
= 60 Vdc, V
BE(off)
= 1.5 Vdc, T
C
= 125C) 2N5194
(V
CE
= 80 Vdc, V
BE(off)
= 1.5 Vdc, T
C
= 125C) 2N5195
I
CEX
—
—
—
—
0.1
0.1
2.0
2.0
mAdc
Collector Cutoff Current
(V
CB
= 60 Vdc, I
E
= 0) 2N5194
(V
CB
= 80 Vdc, I
E
= 0) 2N5195
I
CBO
—
—
0.1
0.1
mAdc
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
I
EBO
— 1.0 mAdc
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
Semiconductor Components Industries, LLC, 2002
April, 2002 – Rev. 10
1 Publication Order Number:
2N5194/D
2N5194
2N5195
*ON Semiconductor Preferred Device
4 AMPERE
POWER TRANSISTORS
SILICON PNP
60–80 VOLTS
*
CASE 77–09
TO–225AA TYPE
3
2
1
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
2N5194 2N5195
http://onsemi.com
2
*ELECTRICAL CHARACTERISTICS — continued (T
C
= 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (2)
(I
C
= 1.5 Adc, V
CE
= 2.0 Vdc) 2N5194
2N5195
(I
C
= 4.0 Adc, V
CE
= 2.0 Vdc) 2N5194
2N5195
h
FE
25
20
10
7.0
100
80
—
—
—
Collector–Emitter Saturation Voltage (2)
(I
C
= 1.5 Adc, I
B
= 0.15 Adc)
(I
C
= 4.0 Adc, I
B
= 1.0 Adc)
V
CE(sat)
—
—
0.6
1.4
Vdc
Base–Emitter On Voltage (2)
(I
C
= 1.5 Adc, V
CE
= 2.0 Vdc)
V
BE(on)
— 1.2 Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= 1.0 Adc, V
CE
= 10 Vdc, f = 1.0 MHz)
f
T
2.0 — MHz
*Indicates JEDEC Registered Data.
(2) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (AMP)
10
0.1
0.004
7.0
5.0
1.0
0.7
0.5
0.3
0.007 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 4.0
V
CE
= 2.0 V
V
CE
= 10 V
Figure 2. Collector Saturation Region
I
B
, BASE CURRENT (mA)
2.0
0
0.05
1.6
1.2
0.8
0.4
0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 10 500
I
C
= 10 mA
2.0 3.0
T
J
= 150°C
-55°C
25°C
3.0
2.0
0.2
h
FE
, DC CURRENT GAIN (NORMALIZED)
5.0 7.0 20 30 50 70 100 200 300
100 mA 1.0 A 3.0 A
T
J
= 25°C
2N5194 2N5195
http://onsemi.com
3
R
BE
, EXTERNAL BASE-EMITTER RESISTANCE (OHMS)
2.0
0.005
I
C
, COLLECTOR CURRENT (AMP)
0.01 0.02 0.03 0.05 0.2 0.3 1.0 2.0 4.0
1.6
1.2
0.8
0.4
0
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
VOLTAGE (VOLTS)
Figure 3. “On” Voltage
0.1 0.5 3.0
V
BE
@ V
CE
= 2.0 V
+2.5
Figure 4. Temperature Coefficients
I
C
, COLLECTOR CURRENT (AMP)
*APPLIES FOR I
C
/I
B
≤ h
FE
@ V
CE
T
J
= -65°C to +150°C
V
, TEMPERATURE COEFFICIENTS (mV/ C)°θ
+2.0
+1.5
+0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
θV
B
for V
BE
*θV
C
for V
CE(sat)
+1.0
0.005 0.01 0.020.03 0.05 0.2 0.3 1.0 2.0 4.00.1 0.5 3.0
10
3
+0.4
Figure 5. Collector Cut–Off Region
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
10
2
10
1
10
0
10
-1
, COLLECTOR CURRENT (A)µI
C
10
-2
10
-3
+0.3 +0.2 +0.1 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6
V
CE
= 30 Vdc
T
J
= 150°C
100°C
25°C
REVERSE
FORWARD
I
CES
10
7
20
Figure 6. Effects of Base–Emitter Resistance
T
J
, JUNCTION TEMPERATURE (°C)
40 60 80 100 120 140 160
10
6
10
5
10
4
10
3
10
2
V
CE
= 30 V
I
C
= 10 x I
CES
I
C
= 2 x I
CES
I
C
≈ I
CES
(TYPICAL I
CES
VALUES
OBTAINED FROM FIGURE 5)
Figure 7. Switching Time Equivalent Test Circuit
APPROX
-11 V
TURN-ON PULSE
V
in
t
1
V
BE(off)
TURN-OFF PULSE
V
in
t
3
t
2
APPROX
-11 V
V
CC
SCOPE
R
B
C
jd
<<C
eb
+4.0 V
t
1
≤ 7.0 ns
100 < t
2
< 500 µs
t
3
< 15 ns
DUTY CYCLE ≈ 2.0%
V
in
R
C
0
R
B
AND R
C
VARIED
TO OBTAIN DESIRED
CURRENT LEVELS
500
0.1
V
R
, REVERSE VOLTAGE (VOLTS)
0.2 0.3 0.5 1.0 3.0 5.0 20 40
300
200
100
70
50
T
J
= 25°C
CAPACITANCE (pF)
Figure 8. Capacitance
2.0 10 30
C
eb
C
cb
APPROX
+9.0 V
123NEXT
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