TECHNICAL DATA
PNP SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/350
Devices Qualified Level
2N3867
2N3867S
2N3868
2N3868S
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
2N3867
2N3867S
2N3868
2N3868S
Unit
Collector-Emitter Voltage
V
CEO
40 60 Vdc
Collector-Base Voltage
V
CBO
40 60 Vdc
Emitter-Base Voltage
V
EBO
4.0 Vdc
Collector Current -- Continuous
I
C
3.0 Adc
Total Power Dissipation @ T
A
= 25
0
C
(1)
@ T
C
= 25
0
C
(2)
P
T
1.0
10
W
W
Operating & Storage Temperature Range
T
OP,
T
STG
-55 to +200
0
C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case
R
θJC
17.5
0
C/W
1) Derate linearly 5.71 mW/
0
C for T
A
> +25
0
C
2) Derate linearly 57.1 mW/
0
C for T
C
> +25
0
C
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
I
C
= 100 µAdc 2N3867, S
2N3868, S
V
(BR)
CBO
40
60
Vdc
Collector-Emitter Breakdown Voltage
I
C
= 20 mAdc 2N3867, S
2N3868, S
V
(BR)
CEO
40
60
Vdc
Emitter-Base Breakdown Voltage
I
E
= 100 µAdc
V
(BR)
EBO
4.0
Vdc
Collector-Emitter Cutoff Current
V
EB
= 2.0 Vdc, V
CE
= 40 Vdc 2N3867, S
V
EB
= 2.0 Vdc, V
CE
= 60 Vdc 2N3868, S
I
CEX
1.0
1.0
µAdc
Collector-Base Cutoff Current
V
CB
= 40 Vdc 2N3867, S
V
CB
= 60 Vdc 2N3868, S
I
CBO
100
µAdc
Emitter-Base Cutoff Current
V
EB
= 4 Vdc
I
EBO
100
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
TO-5*
2N3867, 2N3868
TO-39*
(TO-205AD)
2N3867S, 2N3868S