Freelance Electronics Components Distributor
Closed Dec 25th-26th
800-300-1968
We Stock Hard to Find Parts

SGA-6486Z

Part # SGA-6486Z
Description IC AMP HBT SIGE 4500MHZ SOT-86
Category TRANSISTOR
Availability Out of Stock
Qty 0
Qty Price
1 + $1.90250



Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

1
Product Description
EDS-100615 Rev F
303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
0
6
12
18
24
012345
Frequency (GHz)
Gain (dB)
-40
-30
-20
-10
0
Return Loss (dB)
GAIN
IRL
ORL
SGA-6486
SGA-6486Z
Pb
RoHS Compliant
& Packag
e
Green
DC-4500 MHz, Cascadable
SiGe HBT MMIC Amplifier
Product Features
• Now available in Lead Free, RoHS
Compliant, & Green Packaging
• High Gain : 16.4 dB at 1950 MHz
• Cascadable 50 Ohm
• Operates From Single Supply
• Low Thermal Resistance Package
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
The SGA-6486 is a high performance SiGe HBT MMIC Ampli-
fier. A Darlington configuration featuring 1 micron emitters
provides high F
T
and excellent thermal perfomance. The
heterojunction increases breakdown voltage and minimizes
leakage current between junctions. Cancellation of emitter
junction non-linearities results in higher suppression of
intermodulation products. Only 2 DC-blocking capacitors, a
bias resistor and an optional RF choke are required for op-
eration.
The matte tin finish on Sirenza’s lead-free package utilizes a
post annealing process to mitigate tin whisker formation and
is RoHS compliant per EU Directive 2002/95. This package
is also manufactured with green molding compounds that
contain no antimony trioxide nor halogenated fire retardants.
lobmyS retemaraP stinU ycneuqerF .niM .pyT .xaM
GniaGlangiSllamSBd
zHM058
zHM0591
zHM0042
0.817.91
4.61
8.41
0.22
P
Bd1
noisserpmoCBd1tarewoPtuptuOmBd
zHM058
zHM0591
2.02
5.81
PIO
3
tnioPtpecretnIredrOdrihTtuptuOmBd
zHM058
zHM0591
0.53
0.23
htdiwdnaB
)Bd01>(ssoLnruteRybdenimreteDzHM0054
LRIssoLnruteRtupnIBdzHM05914.12
LROssoLnruteRtuptuOBdzHM05910.81
FNerugiFesioNB
dzHM05913.3
V
D
egatloVgnitarepOeciveDV7.41.55.5
I
D
tnerruCgnitarepOeciveDAm765738
R
HT
l-j,
)daelotnoitcnuj(ecnatsiseRlamrehTW/C°79
Test Conditions:
V
S
= 8 V I
D
= 75 mA Typ. OIP
3
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
R
BIAS
= 39 Ohms T
L
= 25ºC Z
S
= Z
L
= 50 Ohms
Gain & Return Loss vs. Frequency
V
D
= 5.1 V, I
D
= 75 mA (Typ.)
T
L
=+25ºC
2
EDS-100615 Rev F
Preliminary
SGA-6486 DC-4500 MHz Cascadable MMIC Amplifier
303 Technology Court, Broomfield, CO, 80021 Phone: (800) SMI-MMIC http://www.sirenza.com
0
1
2
3
4
5
01234
Frequency (GHz)
Noise Figure (dB)
Typical RF Performance at Key Operating Frequencies
Frequency (MHz)
OIP
3
vs. Frequency
V
D
= 5.1 V, I
D
= 75 mA
P
1dB
vs. Frequency
V
D
= 5.1 V, I
D
= 75 mA
Absolute Maximum Ratings
Noise Figure vs. Frequency
V
D
= 5.1 V, I
D
= 75 mA
Frequency (MHz)
Frequency (MHz)
V
S
= 8 V I
D
= 80 mA Typ. OIP
3
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
R
BIAS
= 39 Ohms T
L
= 25ºC Z
S
= Z
L
= 50 Ohms
lobmyS retemaraP tinU 001 005 058 0591 0042 0053
GniaGlangiSllamSBd0.123.027.914.618.413.21
PIO
3
tnioPtpecretnIredrOdrihTtuptuOmBd0.533.530.530.230.135.62
P
Bd1
noisserpmoCBd1tarewoPtuptuOmBd2.023.022.025.815.717.41
LRIssoLnruteRtupnIBd2.233.328.224.124.714.41
LROssoLnruteRtuptuOB
d8.612.810.320.814.712.41
S
21
noitalosIesreveRBd0.429.326.322.127.916.61
FNerugiFesioNBd2.39.20.33.37.34.4
Frequency (MHz)
Test Conditions:
V
S
= 8 V I
D
= 75 mA Typ. OIP
3
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
R
BIAS
= 39 Ohms T
L
= 25ºC Z
S
= Z
L
= 50 Ohms
T
L
=+25ºC
20
24
28
32
36
40
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Frequency (GHz)
OIP
3
(dBm)
+25°C
-40°C
+85°C
12
14
16
18
20
22
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Frequency (GHz)
P
1dB
(dBm)
+25°C
-40°C
+85°C
T
L
T
L
retemaraP timiLetulosbA
.xaM
tnerruCeciveD
I(
D
)
1
05
Am
.xaM
eciveD
V(egatloV
D
)V7
.xaM
rewoPtupnIFR
mBd81+
.xaM
pmeTnoitcnuJ
T(.
J
)
C°051+
pmeTgnitarepO
T(egnaR.
L
)
C°58+otC°04-
.xaM
pmeTegarotS
.
C°051+
yamstimilesehtfoenoynadnoyebecivedsihtfonoitarepO
,noitareposuonitnocelbailerroF.egamadtnenamrepesuac
m
umixamehtdeecxetontsumtnerrucdnaegatlovecivedeht
.enoegapnoelbatehtnideificepsseulavgnitarepo
:noisserp
xegniwollofehtyfsitasosladluohssnoitidnoCsaiB
I
D
V
D
T(<
J
T-
L
R/)
HT
l-j,
secivedybdetneserpRWSVdnabfotuotnuoccaotniekaT
.rewoptupniFRmumixamenimretedotsretlifWASsahcus
.tna
cifingiseranoitarutasnislevelcinomrahdetcelfeR
3
EDS-100615 Rev F
Preliminary
SGA-6486 DC-4500 MHz Cascadable MMIC Amplifier
303 Technology Court, Broomfield, CO, 80021 Phone: (800) SMI-MMIC http://www.sirenza.com
-30
-25
-20
-15
-10
012345
Frequency (GHz)
|S
12
| (dB)
+25°C
-40°C
+85°C
-40
-30
-20
-10
0
012345
Frequency (GHz)
|S
22
| (dB)
+25°C
-40°C
+85°C
0
6
12
18
24
012345
Frequency (GHz)
|S
21
| (dB)
+25°C
-40°C
+85°C
-40
-30
-20
-10
0
012345
Frequency (GHz)
|S
11
| (dB)
+25°C
-40°C
+85°C
|S
12
| vs. Frequency
V
D
= 5.1 V, I
D
= 75 mA
|S
22
| vs. Frequency
V
D
= 5.1 V, I
D
= 75 mA
T
L
T
L
T
L
T
L
|S
11
| vs. Frequency
V
D
= 5.1 V, I
D
= 75 mA
|S
21
| vs. Frequency
V
D
= 5.1 V, I
D
= 75 mA
* Note: In the applications circuit on page 4, R
BIAS
compensates for voltage and current variation over temperature.
V
D
vs. Temperature for Constant I
D
= 75 mA
V
D
vs. I
D
over Temperature for fixed
V
S
= 8 V, R
BIAS
= 39 ohms *
60
65
70
75
80
85
90
4.7 4.9 5.1 5.3 5.5
V
D
(Volts)
I
D
(mA)
+85°C
+25°C
-40°C
4.7
4.9
5.1
5.3
5.5
5.7
-40 -15 10 35 60 85
Temperature(°C)
V
D
(Volts)
12NEXT