SOT23 NPN SILICON PLANAR
VHF/UHF TRANSISTOR
ISSUE 2 JANUARY 1996
PARTMARKING DETAILS 3B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
30 V
Collector-Emitter Voltage V
CEO
15 V
Emitter-Base Voltage V
EBO
3V
Continuous Collector Current I
C
100 mA
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
30 V
I
C
=1µA, I
E
=0
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
15 V I
C
=3mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
3V
I
E
=10µA, I
C
=0
Collector Cut-Off Current I
CBO
0.05
µA
V
CB
=15V, I
E
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.4 V I
C
=10mA, I
B
=1mA
Base-Emitter
Saturation Voltage
V
BE(sat)
1.0 V I
C
=10mA, I
B
=1mA
Static Forward Current
Transfer Ratio
h
FE
20 I
C
=3mA, V
CE
=1V
Transition Frequency f
T
600 MHz I
C
=4mA, V
CE
=10V
f=100MHz
Output Capacitance C
obo
3.0
1.7
pF
pF
V
CB
=0V, f=1MHz
V
CB
=10V, f=1MHz
Input Capacitance C
ibo
1.6 pF V
EB
=0.5V,f=1MHz
Noise Figure N 6.0 dB V
CE
=6V, I
C
=1mA
f=60MHz, R
G
=400Ω
Common Emitter
Power Gain
G
pe
15 dB V
CB
=12V, I
C
=6mA
f=200MHz
*Measured under pulsed conditions. Pulse Width=300
µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FMMT918
C
B
E
SOT23
3 - 168
