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NTE193A

Part # NTE193A
Description TRANSISTOR,BJT,PNP,70V V(BR)CEO,500MA I(C),TO-92VAR
Category TRANSISTOR
Availability In Stock
Qty 320
Qty Price
1 - 67 $2.27305
68 - 134 $1.80811
135 - 201 $1.70479
202 - 268 $1.58425
269 + $1.41205
Manufacturer Available Qty
NTE ELECTRONICS
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

NTE192 (NPN) & NTE193 (PNP)
NTE192A (NPN) & NTE193A (PNP)
Silicon Complementary Transistors
Audio Power Output
Description:
NTE192 (NPN)/NTE193 (PNP) and NTE192A (NPN)/NTE193A (PNP) are silicon complementary
transistors in a TO92HS type package designed for use in general purpose industrial circuits. These
devices are especially suited for high level linear amplifiers or medium speed switching circuits in
industrial control applications.
Absolute Maximum Ratings:
(T
A
= +25°C unless otherwise specified)
Collector–Emitter Voltage, V
CEO
50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, V
CBO
50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current (Note 1), I
C
500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25°C, Note 1), P
T
900mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 7.2mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
= +25°C), P
T
560mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 4.47mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/16” ±1/32” from case for 10sec max), T
L
+260°C. . . . . . . .
Note 1. Determined from power limitations due to saturation voltage at this current.
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
DC Characteristics
Collector Cutoff Current I
CBO
V
CB
= 50V 0.1 µA
V
CB
= 50V, T
A
= +100°C 15 µA
Emitter Cutoff Current I
EBO
V
EB
= 5V 0.1 µA
Collector Saturation Voltage V
CE(sat)
I
B
= 3mA, I
C
= 50mA 0.30 V
Base Saturation Voltage V
BE(sat)
I
B
= 3mA, I
C
= 50mA 0.85 V
DC Current Gain h
FE
V
CE
= 4.5V, I
C
= 2mA 180 540
Electrical Characteristics (Cont’d): (T
A
= +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Small–Signal Characteristics
SmallSignal Current Gain h
fe
V
C
= 4.5V, Frequency of
Measurement =1000cps
180
V
CE
= 10V, I
C
= 1mA, f = 1kc 150 300
Input Impedance h
ie
V
CE
= 10V, I
C
= 1mA, f = 1kc 4200 8300
Output Admittance h
oe
V
CE
= 10V, I
C
= 1mA, f = 1kc 10 20 µmhos
Voltage Feedback Ratio h
re
V
CE
= 10V, I
C
= 1mA, f = 1kc 0.2 0.4 x 10
3
.127 (3.25)
Pin Number 1 2 3
NTE192/193 C B E
NTE192A/193A B C E
1
2
3
.263
(6.7)
Max
.500
(12.7)
Min
.325
(8.27)
.156
(3.95)
.125 (3.17) Dia
.017 (0.45) Dia
.100 (2.54)
.050 (1.27)
.350 (8.89) .187 (4.76)